A MoS2 Field-Effect Transistor With a Liquid Back Gate

The two-dimensional layer of Molybdenum disulfide (MoS2) has attracted much interest due to its direct-gap property and potential applications in the field of catalysis, nanotribology, microelectronics, lithium batteries, hydrogen storage, medical, high-performance flexible electronics and optoelectronics. In this paper, based on few-layer MoS2 acquired by mechanical exfoliation method, a MoS2 liquid-gated field effect transistor (L-FET) is fabricated. Simultaneously, the few-layer MoS2 is characterized by Raman spectral. Then, the performance of MoS2-based L-FET devices is investigated by a source meter instrument in the different back gate voltage of 0.1mol/L NaCl solution. The result reveals that the Schottky barriers is formed between platinum and few-layer MoS2 and the back gate voltage has a great control effect with the drain-to-source current of MoS2 field effect transistor.

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The electronic applications of stable diradicaloids: present and future

Journal of Materials Chemistry C ◽

10.1039/c8tc04484h ◽

2018 ◽

Vol 6 (42) ◽

pp. 11232-11242 ◽

Cited By ~ 33

Author(s):

Xiaoguang Hu ◽

Wenxiang Wang ◽

Dongsheng Wang ◽

Yonghao Zheng

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Logic Gates ◽

Linear Optics ◽

Non Linear Optics ◽

Potential Applications ◽

Future Potential ◽

Effect Transistor ◽

Organic Batteries

Diradicaloids are promising materials for organic electronics and nonlinear optics due to their unique optical, electronic and magnetic properties. High performance organic field-effect transistor and photodetector based on diradicaloids have been achieved. Future potential applications in organic batteries, memory, logic gates and non-linear optics are expected.

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Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Scientific Reports ◽

10.1038/s41598-019-53367-z ◽

2019 ◽

Vol 9 (1) ◽

Author(s):

Sachin Gupta ◽

F. Rortais ◽

R. Ohshima ◽

Y. Ando ◽

T. Endo ◽

...

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Schottky Barrier Height ◽

Metal Contacts ◽

Back Gate ◽

Vapor Deposition Technique ◽

Effect Transistor

AbstractTwo-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage (Vg) shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (at Vg = 0V), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of positive gate voltage, SBH shows a reduction, which reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

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High Performance Organic Field-Effect Transistor with Low-Temperature Processed diF-TESADT Large Crystal for Flexible Electronics

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.12492 ◽

2016 ◽

Vol 16 (8) ◽

pp. 8470-8472

Author(s):

Won-Tae Park ◽

Yong-Young Noh

Keyword(s):

Low Temperature ◽

Flexible Electronics ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Large Crystal ◽

Organic Field Effect Transistor ◽

Effect Transistor

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Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION

Springer Proceedings in Physics - The Physics of Semiconductor Devices ◽

10.1007/978-3-319-97604-4_4 ◽

2019 ◽

pp. 21-28

Author(s):

Garima Shukla ◽

Abhishek Upadhyay ◽

S. K. Vishvakarma

Keyword(s):

Gate Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Single Layer ◽

Single Layer Graphene ◽

Double Gate ◽

Back Gate ◽

Layer Graphene ◽

Graphene Field Effect Transistor ◽

Effect Transistor

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Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor

Electronics ◽

10.3390/electronics8121415 ◽

2019 ◽

Vol 8 (12) ◽

pp. 1415 ◽

Cited By ~ 1

Author(s):

Jaehong Lee ◽

Garam Kim ◽

Sangwan Kim

Keyword(s):

Gate Voltage ◽

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Subthreshold Swing ◽

Gate Bias ◽

Back Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Aided Design

In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD) simulation and were explained using the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate voltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition, it was found that the on–off current ratio of the TFET increased with a decrease in S due to the back-gate voltage.

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Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

npj 2D Materials and Applications ◽

10.1038/s41699-020-00181-1 ◽

2021 ◽

Vol 5 (1) ◽

Author(s):

Aryan Afzalian

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

High Mobility ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Grand Challenge ◽

Gate Length ◽

Delay Performance ◽

Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

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Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

Nanoscale Advances ◽

10.1039/d0na00603c ◽

2021 ◽

Author(s):

Dongha Shin ◽

Hwa Rang Kim ◽

Byung Hee Hong

Keyword(s):

Transport Properties ◽

Gold Nanoparticle ◽

Electrical Transport ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Electrical Transport Properties ◽

Noncovalent Functionalization ◽

Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

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