Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor
Keyword(s):
In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD) simulation and were explained using the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate voltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition, it was found that the on–off current ratio of the TFET increased with a decrease in S due to the back-gate voltage.
2021 ◽
2020 ◽
Vol 20
(7)
◽
pp. 4298-4302
2020 ◽
Vol 20
(7)
◽
pp. 4182-4187
2020 ◽
Vol 20
(7)
◽
pp. 4409-4413
2021 ◽