Characterization of Heated Atomic Force Microscope Cantilevers in Air and Vacuum

2005 ◽  
Author(s):  
Jungchul Lee ◽  
Tanya L. Wright ◽  
Mark Abel ◽  
Erik Sunden ◽  
Alexei Marchenkov ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Thermal Coupling ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Laser Raman ◽  
Atomic Force ◽  
Afm Cantilever

This paper presents characterization of heated atomic force microscope (AFM) cantilevers in air and helium, both at atmospheric pressure and in a partially evacuated environment. The cantilevers are made of doped single-crystal silicon using a standard silicon-on-insulator cantilever fabrication process. The electrical measurements show the link between the cantilever temperature-dependant electrical characteristics, electrical resistive heating, and thermal properties of the heated AFM cantilever and its surroundings. Laser Raman thermometry measures temperature along the cantilever with resolution near 1 μm and 4°C. By modulating the gaseous environment surrounding the cantilever, it is possible to estimate the microscale thermal coupling between the cantilever and its environment. This work seeks to improve the calibration and design of heated AFM cantilevers.

SYMMETRIC AFM CANTILEVER FOR MECHANICAL CHARACTERIZATION OF Mo THIN FILM

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3781-3786 ◽  
Author(s):  
HAK-JOO LEE ◽  
JAE-HYUN KIM ◽  
KIHO CHO ◽  
JAE-YOON KANG ◽  
CHANG-WOOK BAEK ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Mechanical Tests ◽  
Crystal Silicon ◽  
Bending Tests ◽  
Atomic Force ◽  
Critical Problems ◽  
Adhesive Energy ◽  
Novel Method ◽  
Afm Cantilever

We have developed a novel method and device for measuring the mechanical properties of micro/nano structures. An atomic force microscope (AFM) was employed to sense applied force and displacement and a new AFM cantilever which overcame the critical problems associated with conventional AFM cantilever systems was fabricated using single crystal silicon (110). The symmetrically designed cantilever removed lateral motion of the probe during indentation and strip bending tests. Strip bending tests on fixed-fixed molybdenum ( Mo ) strips 1 μm in thickness using the assembled cantilever in AFM system showed that consistent load-displacement curves can be obtained. The effect of adhesive energy on mechanical tests in micro/nano-scale was revealed.

Photoluminescence Characterization of Thin Silicon-On-Insulator Films Produced by Oxygen Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
J. Weber ◽  
H. Baumgart ◽  
J. Petruzzello ◽  
G.K. Celler
Keyword(s):  
Low Temperature ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Czochralski Silicon ◽  
Transmission Electron ◽  
Processing Step ◽  
Low Temperature Photoluminescence

AbstractSingle crystal silicon films on top of a buried SiO2 layer were produced by implanting 1.7x10180+ions/cm2 at 150keV into (100) Czochralski silicon, followed by annealing at higher temperatures. The defect properties of the layers are studied after each processing step by low temperature photoluminescence measurements and transmission electron micrography (TEM). Dislocation-related photoluminescence signals correlate with their TEM observations in the same samples. The photoluminescence method proves to be a very versatile and convenient method for characterizing the quality of silicon-on-insulat or structures.

Nanomachining of Silicon Surface Using Atomic Force Microscope With Diamond Tip

2005 ◽  
Vol 128 (3) ◽  
pp. 723-729 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Noboru Takano ◽  
Daisuke Oka ◽  
Noboru Morita ◽  
Shigeru Yamada ◽  
...  
Keyword(s):  
Single Crystal ◽  
Atomic Force Microscope ◽  
Silicon Surface ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Machining Parameters ◽  
Crystal Silicon ◽  
Atomic Force ◽  
Ductile Mode ◽  
Hot Filament

This paper investigates nanomachining of single-crystal silicon using an atomic force microscope with a diamond-tip cantilever. To enable nanomachining of silicon, a nanomachining cantilever with a pyramidal diamond tip was developed using a combination of photolithography and hot-filament chemical vapor deposition. Nanomachining experiments on silicon using the cantilever are demonstrated under various machining parameters. The silicon surface can be removed with a rate of several tens to hundreds of nanometers in ductile mode, and the cantilever shows superior wear resistance. The experiments demonstrate successful nanomachining of single-crystal silicon.

Characterization of photosystem II with the atomic-force microscope

1992 ◽  
Vol 50 (2) ◽  
pp. 1146-1147
Author(s):  
Kathleen M. Marr ◽  
Mary K. Lyon
Keyword(s):  
Photosystem Ii ◽  
Atomic Force Microscope ◽  
Three Dimensional ◽  
Biologically Active ◽  
Atomic Force ◽  
Freeze Etching ◽  
Image Averaging ◽  
Oxygen Evolving ◽  
Averaging Techniques

Photosystem II (PSII) is different from all other reaction centers in that it splits water to evolve oxygen and hydrogen ions. This unique ability to evolve oxygen is partly due to three oxygen evolving polypeptides (OEPs) associated with the PSII complex. Freeze etching on grana derived insideout membranes revealed that the OEPs contribute to the observed tetrameric nature of the PSIl particle; when the OEPs are removed, a distinct dimer emerges. Thus, the surface of the PSII complex changes dramatically upon removal of these polypeptides. The atomic force microscope (AFM) is ideal for examining surface topography. The instrument provides a topographical view of individual PSII complexes, giving relatively high resolution three-dimensional information without image averaging techniques. In addition, the use of a fluid cell allows a biologically active sample to be maintained under fully hydrated and physiologically buffered conditions. The OEPs associated with PSII may be sequentially removed, thereby changing the surface of the complex by one polypeptide at a time.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

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