Experimental Researches on Thermal Properties of Dielectric Thin Films With Weak Mechanical Intensity

2009 ◽  
Author(s):  
Hongxia Gao ◽  
Jianzu Yu ◽  
Lei Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermophysical Properties ◽  
Film Structure ◽  
Mems Devices ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
Bulk Specimen ◽  
Measured Specific Heat

Thermophysical properties of dielectric thin films are essential for researching on the thermal performance of microelectronic, optoelectronic and MEMS devices as well as for their reliability. The Joule-heating experimental method of the double-layer free-standing thin-film structure is used to determine the thermophysical properties of SiO2 and Al2O3 thin films by experiment. The thin films are deposited on the SiNx thin film by PECVD and EBE respectively. The results show that the thermal conductivity of both thin films have the obvious size effect. The value is merely a fraction of the one reported for each bulk specimen, and is coincident with the calculated Minimum Thermal Conductivity (MTC). The measured specific heat capacities are almost the same as those of the corresponding bulk. The steady state heat flow of SiO2/SiNx and Al2O3/SiNx membranes in the measurement is analyzed. The thermal radiation of the thin films always takes a large portion of total heat rejection. Therefore it can not be ignored as many macroscale thermal measurements always do.

A Rapid Method to Measure Thermal Conductivity of Dielectric Thin Films: Thermal Resistance Method

2005 ◽  
Author(s):  
Da-Jeng Yao ◽  
Heng-Chieh Chien ◽  
Ming-Hsi Tseng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Dielectric Film ◽  
Electrical Heating ◽  
New Technique ◽  
Simple Method ◽  
Dielectric Thin Films ◽  
Resistance Method

A new and relatively simple method, described for thermal conductivity measurement of dielectric thin films, is presented in this paper. This new technique, the thermal resistance method, can be applied to determine cross-plane thermal conductivity of thin film by electrical heating and sensing techniques without traditional free standing structure design. A slender metal line, deposited on top of dielectric film, is used to measure and extract thermal resistance (Rc) of composite structure, including substrate and dielectric film. A 2-D analytical solution is derived to get thermal resistance (Rs) of substrate. Therefore, the thermal resistance of thin film (Rf) is calculated by subtracting Rs form Rc and thermal conductivity of thin film can also be extracted from thermal resistance. The measurement data of silicon dioxide with difference thickness are verified by using previous scientific literatures. In addition, the measuring results also show good agreement with those measured by 3 omega method. According to advantages of rather rapid and accuracy, this new technique has potential to develop to be an in-line test key for MEMS and IC relative industries.

scholarly journals The pulsed laser damage sensitivity of optical thin films, thermal conductivity

1989 ◽  
Vol 7 (3) ◽  
pp. 433-441 ◽  
Author(s):  
Arthur H. Guenther ◽  
John K. McIver
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Flow Analysis ◽  
Pulsed Laser ◽  
Damage Threshold ◽  
Deposition Process ◽  
Film Structure ◽  
Film Research ◽  
Laser Induced Damage

Pulsed laser induced damage of optical thin films is, in general, initiated by the absorption of laser radiation by imperfections in the films or at interfaces between film layers and/or the substrate. A heat flow analysis of this process stresses the importance that the thermal conductivity of both the thin film host and that of the substrate play in establishing the laser-induced damage threshold. Unfortunately, recent work, which will be reviewed in this presentation, indicates that the thermal conductivity of thin films can be several orders of magnitude lower than that of the corresponding material in bulk form. This situation arises as a consequence of the film structure resulting principally from the deposition process. The importance of thermal conductivity will be compared to parameters such as absorption mechanisms, film materials, composition, and other variables. Its implication for the ultimate optical strength of materials and the direction in which thin film research and processing should proceed will be highlighted.

Measurement of Thermophysical Properties of Thin Film Shape Memory Alloys Using the 3-Omega Method

2005 ◽  
Author(s):  
Ankur Jain ◽  
Kenneth E. Goodson
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Thermal Properties ◽  
Shape Memory Alloys ◽  
Shape Memory ◽  
Thermophysical Properties ◽  
Temperature Oscillation ◽  
Free Standing ◽  
Film Property ◽  
Omega Method

The excellent mechanical properties of thin film shape memory alloys like Nickel-Titanium (NiTi) have led to their widespread use in MEMS-based micropumps, microactuators, microgrippers, etc. Shape memory based micropumps and actuators have superior work densities compared to other technologies. Characterization of thermophysical properties of these materials is important for modeling the behavior of NiTi-based microdevices. For example, the frequency response of shape-memory based microactuators depends on the rate of dissipation of thermal energy, which is a strong function of the thermal properties of the thin film. While bulk thermal properties of NiTi have been reported before, there exists very little work on measuring these properties for the thin film form. This paper uses the 3-ω method for measurement of thermal conductivity of NiTi thin films. NiTi is sputtered on a Silicon substrate, followed by patterning of a metal heater line. Front-to-backside alignment and Deep Reactive Ion Etching (DRIE) of the substrate results in a free standing thin film of NiTi. A sinusoidal electric current is passed through the metal heater, and the third harmonic of the voltage is measured using a lock-in amplifier. This is used to determine the temperature oscillation in the metal heater, which provides the thin film thermal conductivity using a recently developed analytical model for 3-ω measurements in a two-dimensional free standing thin film. The measured values are found to be much lower than the known bulk thermal conductivity of NiTi. This highlights the importance of thin film property measurements instead of using bulk properties. Data obtained in this work is likely to be useful for improved modeling of thin film shape memory based microdevices.

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

The Elastic Moduli of Silver Thin Films Measured with a New Microtensile Tester

1991 ◽  
Vol 239 ◽  
Author(s):  
J. Ruud ◽  
D. Josell ◽  
A. L. Greer ◽  
F. Spaepen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Diffraction Grating ◽  
Strain Measurement ◽  
Elastic Moduli ◽  
Two Dimensional ◽  
Bulk Crystals ◽  
Free Standing ◽  
Tensile Direction ◽  
Silver Thin Films

ABSTRACTA new design for a thin film microtensile tester is presented. The strain is measured directly on the free-standing thin film from the displacement of laser spots diffracted from a thin grating applied to its surface by photolithography. The diffraction grating is two-dimensional, allowing strain measurement both along and transverse to the tensile direction. In principle, both Young's modulus and Poisson's ratio of a thin film can be determined. Ag thin films with strong <111> texture were tested. The measured Young moduli agreed with those measured on bulk crystals, but the measured Poisson ratios were low, most likely due to slight transverse folding of the film that developed during the test.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

Free-standing membranes from the chemical exfoliation of mesoporous amorphous titania thin film

2021 ◽  
Author(s):  
Victor Malgras ◽  
Joel Henzie ◽  
Yoshitaka Matsushita ◽  
Yoshiyuki Sugahara ◽  
Yusuke Yamauchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Free Standing ◽  
Amorphous Titania ◽  
Titania Thin Film ◽  
Chemical Exfoliation

Thin films are typically bound to their substrate, limiting their integration on rough, porous, curved or chemically/thermally sensitive surfaces. Instead of employing tedious and expensive back-etching processes, certain chemical routes...

Monolayer graphene-supported free-standing PS-b-PMMA thin film with perpendicularly orientated microdomains

RSC Advances ◽  
2014 ◽  
Vol 4 (109) ◽  
pp. 63941-63945 ◽  
Author(s):  
Mei-Ling Wu ◽  
Jing Li ◽  
Li-Jun Wan ◽  
Dong Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monolayer Graphene ◽  
Free Standing

A facile way to fabricate robust free-standing PS-b-PMMA thin films with perpendicularly orientated microdomains on monolayer graphene is reported.

Resonant Fatigue Testing of Cantilever Specimens Prepared from Thin Films

2008 ◽  
Vol 1139 ◽  
Author(s):  
Kwangsik Kwak ◽  
Masaaki Otsu ◽  
Kazuki Takashima
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cantilever Beam ◽  
Microelectromechanical Systems ◽  
Fatigue Testing ◽  
Crystalline Silicon ◽  
Gold Foil ◽  
Fatigue Properties ◽  
Mems Devices ◽  
Testing Method

AbstractFatigue properties of thin film materials are extremely important to design durable and reliable microelectromechanical systems (MEMS) devices. However, it is rather difficult to apply conventional fatigue testing method of bulk materials to thin films. Therefore, a fatigue testing method fitted to thin film materials is required. In this investigation, we have developed a fatigue testing method that uses a resonance of cantilever type specimen prepared from thin films. Cantilever beam specimens with dimensions of 1(W) × 3(L) × 0.01(t) mm3 were prepared from Ni-P amorphous alloy thin films and gold foils. In addition, cantilever beam specimens with dimension of 3(L) × 0.3(W) × 0.005(t) mm3 were also prepared from single crystalline silicon thin films. These specimens were fixed to a holder that is connected to an golddio speaker used as an actuator, and were resonated in bending mode. In order to check the validity of this testing method, Young's moduli of these specimens were measured from resonant frequencies. The average Young's modulus of Ni-P was 108 GPa and that of gold foil specimen was 63 GPa, and these values were comparable with those measured by other techniques. This indicates that the resonance occurred theoretically-predicted manner and this testing method is valid for measuring the fatigue properties of thin films. Resonant fatigue tests were carried out for these specimens by changing amplitude range of resonance, and S-N curves were successfully obtained.

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