Chemical vapor deposition–physical vapor deposition aluminum plug process for dynamic random-access memory applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1775005 ◽

2004 ◽

Vol 22 (4) ◽

pp. 1931

Author(s):

Won-Jun Lee ◽

Sa-Kyun Rha

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Physical Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Memory Applications

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Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/48/26/265203 ◽

2015 ◽

Vol 48 (26) ◽

pp. 265203 ◽

Author(s):

M Aoukar ◽

P D Szkutnik ◽

D Jourde ◽

B Pelissier ◽

P Michallon ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Phase Change ◽

Carbon Content ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Access Memory ◽

Memory Applications

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Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications

Applied Physics Letters ◽

10.1063/1.3579192 ◽

2011 ◽

Vol 98 (15) ◽

pp. 151901 ◽

Author(s):

D. Reso ◽

M. Silinskas ◽

M. Lisker ◽

A. Schubert ◽

E. P. Burte

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Hot Wire ◽

Access Memory ◽

Germanium Selenide ◽

Memory Applications

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Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-001-0170-4 ◽

2001 ◽

Vol 30 (12) ◽

pp. 1532-1536 ◽

Author(s):

S. Berger ◽

A. Captain ◽

H. Spiellberg ◽

E. Iskevitch ◽

S. Levi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Memory Cells ◽

Access Memory ◽

Thermal Chemical Vapor Deposition

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Preparation of (Pb0.88La0.12)TiO3 thin films for dynamic random access memory by low pressure-metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02652977 ◽

1995 ◽

Vol 24 (8) ◽

pp. 1023-1027 ◽

Author(s):

Seaung-Suk Lee ◽

Ho-Gi Kim

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Metalorganic Chemical

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Electrical Properties for Capacitors of Dynamic Random Access Memory on(Pb,La)(Zr,Ti)O3Thin Films by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.5139 ◽

1994 ◽

Vol 33 (Part 1, No. 9B) ◽

pp. 5139-5142 ◽

Author(s):

Hiroshi Nakasima ◽

Sigeki Hazumi ◽

Tadashi Kamiya ◽

Kouji Tominaga ◽

Masaru Okada

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Metalorganic Chemical

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Chemical vapor deposition synthesis of sp2-BN film on 2-inch Si substrates for bipolar resistive random access memory device

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2019.104614 ◽

2019 ◽

Vol 103 ◽

pp. 104614

Author(s):

Hongwei Liang ◽

Qasim Abbas ◽

Yuanpeng Chen ◽

Jianjun Shi ◽

Xiaochuan Xia ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Memory Device ◽

Resistive Random Access Memory ◽

Access Memory ◽

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Liquid Delivery Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3Thin Films for High-Density Ferroelectric Random Access Memory Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.6690 ◽

2002 ◽

Vol 41 (Part 1, No. 11B) ◽

pp. 6690-6694 ◽

Author(s):

June Key Lee ◽

Moon-Sook Lee ◽

Sungho Hong ◽

Wanin Lee ◽

Yong Kyun Lee ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Organic Chemical ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process

Advanced Electronic Materials ◽

10.1002/aelm.202100375 ◽

2021 ◽

pp. 2100375

Author(s):

Jaejoong Jeong ◽

Min Ju Kim ◽

Wan Sik Hwang ◽

Byung Jin Cho

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Deposition Process ◽

Resistive Random Access Memory ◽

Chemical Vapor Deposition Process ◽

Access Memory ◽

Initiated Chemical Vapor Deposition

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Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb(ZrxTi1-x)\barO3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(ZrxTi1-x)O3

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.6709 ◽

2002 ◽

Vol 41 (Part 1, No. 11B) ◽

pp. 6709-6713 ◽

Author(s):

Moon-Sook Lee ◽

Kun-Sang Park ◽

Sang-Don Nam ◽

Kyu-Mann Lee ◽

Jung-Suk Seo ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Metalorganic Chemical

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Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process (Adv. Electron. Mater. 10/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170048 ◽

2021 ◽

Vol 7 (10) ◽

pp. 2170048

Author(s):

Jaejoong Jeong ◽

Min Ju Kim ◽

Wan Sik Hwang ◽

Byung Jin Cho

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Deposition Process ◽

Resistive Random Access Memory ◽

Chemical Vapor Deposition Process ◽

Access Memory ◽

Initiated Chemical Vapor Deposition

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