Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity

2009 ◽  
Vol 27 (5) ◽  
pp. 2270 ◽  
Author(s):  
S. Golka ◽  
M. Arens ◽  
M. Reetz ◽  
T. Kwapien ◽  
S. Bouchoule ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Selectivity ◽  
Plasma Process ◽  
Inductively Coupled

Characterization and Catalytic Properties of Ni3Al for Hydrogen Production from Methanol

2004 ◽  
Vol 842 ◽  
Author(s):  
Ya Xu ◽  
Satoshi Kameoka ◽  
Kyosuke Kishida ◽  
Masahiko Demura ◽  
An-pang Tsai ◽  
...  
Keyword(s):  
Hydrogen Production ◽  
Surface Area ◽  
Inductively Coupled Plasma ◽  
Surface Characterization ◽  
High Selectivity ◽  
Methanol Decomposition ◽  
Area Measurement ◽  
Life Test ◽  
Inductively Coupled ◽  
Powder Samples

ABSTRACTThe stability of catalytic activity and selectivity of Ni3Al for methanol decomposition were studied by life test at 633 K on the alkali-leached powder samples. The characterization of the samples was carried out by X-ray diffraction, inductively coupled plasma (ICP) analysis, SEM observation, and surface area measurement. The life test showed that the alkali-leached Ni3Al exhibits a very stable activity and a high selectivity for methanol decomposition. The surface characterization after reaction suggests that the high selectivity and stable activity may be attributed to the formation of tiny particles and porous structure which increased the surface area significantly during reaction. These results indicate a possibility of Ni3Al as a catalyst for hydrogen production reaction.

scholarly journals Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4267
Author(s):  
Stefano Ponzoni ◽  
Sonia Freddi ◽  
Marta Agati ◽  
Vincent Le Borgne ◽  
Simona Boninelli ◽  
...  
Keyword(s):  
Photon Energy ◽  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Inner Core ◽  
Optical Measurements ◽  
Spectral Energy ◽  
Silicon Nanostructures ◽  
Relaxation Dynamics ◽  
Plasma Process ◽  
Inductively Coupled

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide such information. In the present paper, we report on the relaxation dynamics of photogenerated charge-carriers in ultrafine SiNS synthesized by means of inductively-coupled-plasma process. The carriers’ transient regime was characterized in high fluence regime by using a tunable pump photon energy and a broadband probe pulse with a photon energy ranging from 1.2 eV to 2.8 eV while varying the energy of the pump photons and their polarization. The SiNS consist of Si nanospheres and nanowires (NW) with a crystalline core embedded in a SiOx outer-shell. The NW inner core presents different typologies: long silicon nanowires (SiNW) characterized by a continuous core (with diameters between 2 nm and 15 nm and up to a few microns long), NW with disconnected fragments of SiNW (each fragment with a length down to a few nanometers), NW with a “chaplet-like” core and NW with core consisting of disconnected spherical Si nanocrystals. Most of these SiNS are asymmetric in shape. Our results reveal a photoabsorption (PA) channel for pump and probe parallel polarizations with a maximum around 2.6 eV, which can be associated to non-isotropic ultra-small SiNS and ascribed either to (i) electron absorption driven by the probe from some intermediate mid-gap states toward some empty state above the bottom of the conduction band or (ii) the Drude-like free-carrier presence induced by the direct-gap transition in the their band structure. Moreover, we pointed up the existence of a broadband and long-living photobleaching (PB) in the 1.2–2.0 eV energy range with a maximum intensity around 1.35 eV which could be associated to some oxygen related defect states present at the Si/SiOx interface. On the other hand, this wide spectral energy PB can be also due to both silicon oxide band-tail recombination and small Si nanostructure excitonic transition.

scholarly journals Improvement of the quality of analytical control of metallurgical products as a means of uncertainty

2020 ◽  
Vol 130 (1) ◽  
pp. 11-17
Author(s):  
R.A. Aubakirova ◽  
◽  
E.N. Ivashchenko ◽  
B.S. Saurbaeva ◽  
G.K. Daumova ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Selectivity ◽  
Atomic Emission ◽  
Analytical Control ◽  
Inductively Coupled ◽  
Atomic Spectral Analysis ◽  
Physical And Chemical ◽  
Instrumental Methods ◽  
Analytical Laboratories

The entire technological process, starting from ore mining to ending with the release of finished products, it is closely connected with the analytical control of each stage. Currently, the practice of analytical laboratories of large metallurgical enterprises, which include the Oskemen Metallurgical Complex LLP "Kazzinc", has firmly entered the physical and chemical or instrumental methods. These methods, which are characterized by rapidity, high selectivity and the ability to simultaneously determine several components, have replaced in most cases chemical ones. The article presents experimental data on the analysis of dump slag - the waste from metallurgical production of the Oskemen Metallurgical Complex LLP "Kazzinc"- by atomic emission method with inductively coupled plasma. Atomic spectral analysis are used in mining and geology, metallurgy, metalworking and chemical industries, etc. The analysis results were processed from the standpoint of the concept of uncertainty, which is very relevant in the practice of the analytical laboratory.

SCREAM for Multi-Level Movable Structures by Inductively Coupled Plasma Process

2002 ◽  
Author(s):  
Yu-Hsin Lin ◽  
Hung-Ling Yin ◽  
Yung-Yu Hsu ◽  
Yi-Chiuen Hu ◽  
Hsiao-Yu Chou ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Single Crystal Silicon ◽  
Fabrication Process ◽  
Experimental Investigations ◽  
Plasma Process ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Silicon Structures ◽  
Multi Level ◽  
Fabrication Parameters

A novel fabrication process to etch, to passivate, and to release single-crystal silicon structures totally in just only one process by inductively coupled plasma reactive ion etching (ICP-RIE) has been presented in this paper. Several kinds of movable actuators such as relay, comb-drive, and capacitance with thickness of 30 μm have been fabricated successfully to demonstrate this fabrication process. Here, experimental investigations about fabrication parameters to get well profile and suspension structures are performed in a STS ICP-RIE system.

Deep RIE Process for Silicon Carbide Power Electronics and MEMS

2000 ◽  
Vol 622 ◽  
Author(s):  
Glenn Beheim ◽  
Carl S. Salupo
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Inductively Coupled Plasma ◽  
High Selectivity ◽  
Reactive Ion Etching ◽  
High Rate ◽  
Etch Depth ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Anisotropic Etch

ABSTRACTReactive ion etching (RIE) of silicon carbide (SiC) to depths ranging from 10 μm to more than 100 μm is required for the fabrication of SiC power electronics and SiC MEMS. A deep RIE process using an inductively coupled plasma (ICP) etch system has been developed which provides anisotropic etch profiles and smooth etched surfaces, a high rate (3000 Å/min), and a high selectivity (80:1) to the etch mask. An etch depth of 100 μm is demonstrated.

Formation of thermally stable Ni monosilicide using an inductively coupled plasma process

2004 ◽  
Vol 33 (8) ◽  
pp. 916-922 ◽  
Author(s):  
Young-Woo Ok ◽  
Chel-Jong Choi ◽  
Jeong-Tae Maeng ◽  
Tae-Yeon Seong
Keyword(s):  
Inductively Coupled Plasma ◽  
Thermally Stable ◽  
Plasma Process ◽  
Inductively Coupled
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