Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C
2010 ◽
Vol 28
(4)
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pp. 755-760
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2007 ◽
Vol 25
(4)
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pp. 1073-1077
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2005 ◽
Vol 23
(5)
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pp. 2203
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Keyword(s):
1988 ◽
Vol 6
(3)
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pp. 1922-1923
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Keyword(s):
2006 ◽
Vol 89
(11)
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pp. 3560-3563
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Keyword(s):