Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C

J. S. Kim; B. S. Kwon; W. Heo; C. R. Jung; J. S. Park; J. W. Shon; N.-E. Lee

doi:10.1116/1.3430551

Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3430551 ◽

2010 ◽

Vol 28 (4) ◽

pp. 755-760 ◽

Cited By ~ 4

Author(s):

J. S. Kim ◽

B. S. Kwon ◽

W. Heo ◽

C. R. Jung ◽

J. S. Park ◽

...

Keyword(s):

Silicon Nitride ◽

Plasma Etching ◽

Chemical Vapor ◽

Dual Frequency ◽

Capacitively Coupled ◽

Chemical Vapor Deposited ◽

Capacitively Coupled Plasma

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Negative resistance phenomenon in dual-frequency capacitively coupled plasma-enhanced chemical vapor deposition system for photovoltaic manufacturing process

Journal of Applied Physics ◽

10.1063/1.3679107 ◽

2012 ◽

Vol 111 (2) ◽

pp. 023305 ◽

Cited By ~ 3

Author(s):

H. C. Kwon ◽

Aman‐ur‐Rehman ◽

I. H. Won ◽

W. T. Park ◽

J. K. Lee

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Manufacturing Process ◽

Chemical Vapor ◽

Negative Resistance ◽

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma

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Formation of silicon nitride nanopillars in dual-frequency capacitively coupled plasma and their application to Si nanopillar etching

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2713116 ◽

2007 ◽

Vol 25 (4) ◽

pp. 1073-1077 ◽

Cited By ~ 5

Author(s):

C. K. Park ◽

H. T. Kim ◽

D. Y. Kim ◽

N.-E. Lee

Keyword(s):

Silicon Nitride ◽

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma

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Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2009770 ◽

2005 ◽

Vol 23 (5) ◽

pp. 2203 ◽

Cited By ~ 23

Author(s):

D. H. Kim ◽

C. H. Lee ◽

S. H. Cho ◽

N.-E. Lee ◽

G. C. Kwon

Keyword(s):

Silicon Nitride ◽

High Frequency ◽

Frequency Variation ◽

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma ◽

Nitride Layers

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Effect of high-frequency variation on ArF photoresist deformation during superimposed dual frequency (DFS) capacitively coupled plasma etching

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004. ◽

10.1109/imnc.2004.245789 ◽

2004 ◽

Author(s):

D.H. Kim ◽

S.H. Cho ◽

N.-E. Lee

Keyword(s):

Plasma Etching ◽

High Frequency ◽

Frequency Variation ◽

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma

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Summary Abstract: Comparative study of plasma‐enhanced chemical vapor deposited silicon nitride films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.575249 ◽

1988 ◽

Vol 6 (3) ◽

pp. 1922-1923 ◽

Cited By ~ 2

Author(s):

Vineet S. Dharmadhikari

Keyword(s):

Silicon Nitride ◽

Comparative Study ◽

Chemical Vapor ◽

Silicon Nitride Films ◽

Chemical Vapor Deposited

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Characterization of Chemical Vapor-Deposited (CVD) Mullite+CVD Alumina+Plasma-Sprayed Tantalum Oxide Coatings on Silicon Nitride Vanes After an Industrial Gas Turbine Engine Field Test

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2006.01256.x ◽

2006 ◽

Vol 89 (11) ◽

pp. 3560-3563 ◽

Cited By ~ 1

Author(s):

J. A. Haynes ◽

S. M. Zemskova ◽

H. T. Lin ◽

M. K. Ferber ◽

W. Westphal

Keyword(s):

Silicon Nitride ◽

Field Test ◽

Tantalum Oxide ◽

Chemical Vapor ◽

Oxide Coatings ◽

Turbine Engine ◽

Chemical Vapor Deposited ◽

Plasma Sprayed ◽

Industrial Gas Turbine

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Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

Applied Physics Letters ◽

10.1063/1.93714 ◽

1982 ◽

Vol 41 (9) ◽

pp. 844-846 ◽

Cited By ~ 7

Author(s):

H. L. Hwang ◽

C. C. Hwu ◽

J. C. Liue ◽

H. H. Lin

Keyword(s):

Silicon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Chemical Vapor ◽

Low Pressure ◽

Rutherford Backscattering ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma

Plasma Science and Technology ◽

10.1088/1009-0630/18/2/08 ◽

2016 ◽

Vol 18 (2) ◽

pp. 143-146

Author(s):

Hongyu Wang ◽

Wei Jiang ◽

Peng Sun ◽

Shuangyun Zhao ◽

Yang Li

Keyword(s):

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma

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Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Thin Solid Films ◽

10.1016/j.tsf.2013.10.163 ◽

2014 ◽

Vol 550 ◽

pp. 545-553 ◽

Cited By ~ 7

Author(s):

Kiyoteru Kobayashi ◽

Aran Suzuki ◽

Kokichi Ishikawa

Keyword(s):

Silicon Nitride ◽

Leakage Current ◽

Thermal Annealing ◽

Ultraviolet Light ◽

Chemical Vapor ◽

Low Pressure ◽

Annealing Effect ◽

Silicon Nitride Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Effect of low-frequency power on etching of SiCOH low-k films in CHF3 13.56MHz/2MHz dual-frequency capacitively coupled plasma

Microelectronic Engineering ◽

10.1016/j.mee.2008.12.037 ◽

2009 ◽

Vol 86 (3) ◽

pp. 421-424 ◽

Cited By ~ 11

Author(s):

Chao Ye ◽

Yijun Xu ◽

Xiaojiang Huang ◽

Zhenyu Xing ◽

Jing Yuan ◽

...

Keyword(s):

Low Frequency ◽

Dual Frequency ◽

Capacitively Coupled ◽

Capacitively Coupled Plasma ◽

Low Frequency Power ◽

Low K ◽

Frequency Power

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