scholarly journals Electron-enhanced atomic layer deposition of silicon thin films at room temperature

2018 ◽  
Vol 36 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Jaclyn K. Sprenger ◽  
Huaxing Sun ◽  
Andrew S. Cavanagh ◽  
Steven M. George
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Silicon Thin Films ◽  
Layer Deposition

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

scholarly journals Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽  
2020 ◽  
Vol 2020 (5) ◽  
pp. 16-18
Author(s):  
Fumihiko Hirose
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Graduate School ◽  
Room Temperature ◽  
Atomic Layer ◽  
Science And Engineering ◽  
Layer Deposition ◽  
Potential Applications ◽  
Properties Of Materials ◽  
Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

scholarly journals Tuning electronic properties in LaNiO3 thin films by B-site Cu-substitution

2020 ◽  
Vol 8 (36) ◽  
pp. 12662-12668
Author(s):  
Henrik H. Sønsteby ◽  
Erik Skaar ◽  
Jon E. Bratvold ◽  
John W. Freeland ◽  
Angel Yanguas-Gil ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Room Temperature ◽  
Atomic Layer ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Cu Substitution ◽  
Layer Deposition

Cu-Substitution in LaNiO3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.

scholarly journals Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature

2018 ◽  
Vol 36 (1) ◽  
pp. 01A109 ◽  
Author(s):  
Julian Pilz ◽  
Alberto Perrotta ◽  
Paul Christian ◽  
Martin Tazreiter ◽  
Roland Resel ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Material Properties ◽  
Room Temperature ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

UV-enhanced atomic layer deposition of ZrO2 thin films at room temperature

2010 ◽  
Vol 518 (22) ◽  
pp. 6432-6436 ◽  
Author(s):  
Byoung H. Lee ◽  
Sangho Cho ◽  
Jae K. Hwang ◽  
Su H. Kim ◽  
Myung M. Sung
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition

Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C

2018 ◽  
Vol 122 (17) ◽  
pp. 9455-9464 ◽  
Author(s):  
Jaclyn K. Sprenger ◽  
Huaxing Sun ◽  
Andrew S. Cavanagh ◽  
Alexana Roshko ◽  
Paul T. Blanchard ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of B2O3 thin films at room temperature

2006 ◽  
Vol 514 (1-2) ◽  
pp. 145-149 ◽  
Author(s):  
Matti Putkonen ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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