Two-dimensional atomic force microprobe trench metrology system

Author(s):  
D. Nyyssonen
Author(s):  
Shunyu Chang ◽  
Yanquan Geng ◽  
Yongda Yan

AbstractAs one of the most widely used nanofabrication methods, the atomic force microscopy (AFM) tip-based nanomachining technique offers important advantages, including nanoscale manipulation accuracy, low maintenance cost, and flexible experimental operation. This technique has been applied to one-, two-, and even three-dimensional nanomachining patterns on thin films made of polymers, metals, and two-dimensional materials. These structures are widely used in the fields of nanooptics, nanoelectronics, data storage, super lubrication, and so forth. Moreover, they are believed to have a wide application in other fields, and their possible industrialization may be realized in the future. In this work, the current state of the research into the use of the AFM tip-based nanomachining method in thin-film machining is presented. First, the state of the structures machined on thin films is reviewed according to the type of thin-film materials (i.e., polymers, metals, and two-dimensional materials). Second, the related applications of tip-based nanomachining to film machining are presented. Finally, the current situation of this area and its potential development direction are discussed. This review is expected to enrich the understanding of the research status of the use of the tip-based nanomachining method in thin-film machining and ultimately broaden its application.


1999 ◽  
Vol 572 ◽  
Author(s):  
Stefan Zollner ◽  
Atul Konkar ◽  
R. B. Gregory ◽  
S. R. Wilson ◽  
S. A. Nikishin ◽  
...  

ABSTRACTWe measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.


2007 ◽  
Vol 14 (03) ◽  
pp. 439-444 ◽  
Author(s):  
Z. H. SUN ◽  
D. XU ◽  
G. W. YU ◽  
G. H. ZHANG ◽  
X. Q. WANG ◽  
...  

Single crystals of nonlinear optical material, L-arginine trifluoroacetate (abbreviated as LATF), were grown from an aqueous solution by the low temperature solution growth method. The cell parameters of the grown crystal were determined by the X-ray powder diffraction analysis. Atomic force microscopy (AFM) was used to investigate the surface morphology of {101} cleavage faces of LATF. Straight steps and two-dimensional nuclei were observed. Liquid inclusions and impurities as defects for revealing macrosteps were demonstrated. The molecular structure and crystal structure correlative with surface morphology were discussed.


1998 ◽  
Vol 05 (01) ◽  
pp. 387-392 ◽  
Author(s):  
D. Abriou ◽  
D. Gagnot ◽  
J. Jupille ◽  
F. Creuzet

The growth mode of silver films deposited at room temperature on TiO 2(110) surfaces has been examined by means of atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) in ultrahigh vacuum (UHV) conditions, On clean vacancy-free TiO 2(110) surfaces, 0.1-nm-thick (on average) Ag deposits form a two-dimensional (2D) layer. When the thickness of the silver overlayer is increased, 3D clusters are shown to appear while the 2D film is preserved, furthermore, the influence of surface oxygen vacancies on the growth of Ag/TiO 2(110) is evidenced by well-characterized differences in the morphology of 9-nm-thick silver deposits.


2018 ◽  
Vol 421 ◽  
pp. 134
Author(s):  
Hang Zhang ◽  
Junxiang Huang ◽  
Yongwei Wang ◽  
Rui Liu ◽  
Xiulan Huai ◽  
...  

1996 ◽  
Vol 35 (Part 1, No. 12A) ◽  
pp. 6233-6238 ◽  
Author(s):  
Satomi Ohnishi ◽  
Masahiko Hara ◽  
Taiji Furuno ◽  
Hiroyuki Sasabe

2004 ◽  
Vol 11 (01) ◽  
pp. 71-75
Author(s):  
Y. L. GENG ◽  
D. XU ◽  
D. L. SUN ◽  
X. Q. WANG ◽  
G. H. ZHANG ◽  
...  

Growth hillocks on the {100} faces of L-arginine phosphate monohydrate (LAP) single crystals grown at 25°C and at a supersaturation of 0.32 have been discussed. The typical dislocation growth hillocks are lopsided and elongate along the b direction. The dislocation sources are probably caused by the extra stress field which is introduced by the hollow cavities distributing on the steps and hillocks generated by the two-dimensional nucleus. The elongated shape is due to the characteristic structure of the LAP crystal. Apart from that, the formation of the lopsided growth hillocks is explained by the liquid flow theory.


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