GROWTH AND SURFACE MORPHOLOGY OF {101} CLEAVAGE PLANES OF L-ARGININE TRIFLUOROACETATE CRYSTALS

2007 ◽  
Vol 14 (03) ◽  
pp. 439-444 ◽  
Author(s):  
Z. H. SUN ◽  
D. XU ◽  
G. W. YU ◽  
G. H. ZHANG ◽  
X. Q. WANG ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Grown Crystal ◽  
Two Dimensional ◽  
Nonlinear Optical Material ◽  
X Ray ◽  
Cell Parameters ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Method ◽  
Temperature Solution

Single crystals of nonlinear optical material, L-arginine trifluoroacetate (abbreviated as LATF), were grown from an aqueous solution by the low temperature solution growth method. The cell parameters of the grown crystal were determined by the X-ray powder diffraction analysis. Atomic force microscopy (AFM) was used to investigate the surface morphology of {101} cleavage faces of LATF. Straight steps and two-dimensional nuclei were observed. Liquid inclusions and impurities as defects for revealing macrosteps were demonstrated. The molecular structure and crystal structure correlative with surface morphology were discussed.

scholarly journals Dielectric Function of AlN Grown on Si (111) by MBE

1999 ◽  
Vol 572 ◽  
Author(s):  
Stefan Zollner ◽  
Atul Konkar ◽  
R. B. Gregory ◽  
S. R. Wilson ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Buffer Layers ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimensional Growth ◽  
Peak Widths

ABSTRACTWe measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

Morphology of Silver Thin Films Deposited on TiO2(110) Surfaces

1998 ◽  
Vol 05 (01) ◽  
pp. 387-392 ◽  
Author(s):  
D. Abriou ◽  
D. Gagnot ◽  
J. Jupille ◽  
F. Creuzet
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Two Dimensional ◽  
Silver Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Silver Deposits ◽  
Silver Thin Films

The growth mode of silver films deposited at room temperature on TiO 2(110) surfaces has been examined by means of atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) in ultrahigh vacuum (UHV) conditions, On clean vacancy-free TiO 2(110) surfaces, 0.1-nm-thick (on average) Ag deposits form a two-dimensional (2D) layer. When the thickness of the silver overlayer is increased, 3D clusters are shown to appear while the 2D film is preserved, furthermore, the influence of surface oxygen vacancies on the growth of Ag/TiO 2(110) is evidenced by well-characterized differences in the morphology of 9-nm-thick silver deposits.

Biocompatibility Studies of the Nitinol Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fibroblast Cell ◽  
Vero Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fetal Bovine ◽  
Fibroblast Cell Lines

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.

Investigation Of Nucleation And Initial Stage Of Gan Growth By Atomic Force Microscopy And X-Ray Diffraction

1997 ◽  
Vol 482 ◽  
Author(s):  
P. W. Yip ◽  
S.-Q. Wang ◽  
A. J. Drehman ◽  
L. D. Zhu ◽  
P. E. Norris
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Deposition Temperature ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Initial Stage

AbstractThe nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide xray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω–scan of GaN (101) diffraction was 1700–2000 arc seconds for 200–1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.

Structural characterization of dimercury(1+) pentacyanonitrosylferrate(2−), Hg2[Fe(CN)5NO]

2000 ◽  
Vol 15 (3) ◽  
pp. 193-197
Author(s):  
V. Venegas ◽  
G. Rueda-Morales ◽  
E. Reguera ◽  
F. Caleyo
Keyword(s):  
Atomic Force Microscopy ◽  
Orthorhombic Symmetry ◽  
Unit Cell Parameters ◽  
Calculated Density ◽  
X Ray ◽  
Cell Parameters ◽  
Force Microscopy ◽  
Atomic Force ◽  
Density Values

The titled compound, Hg2[Fe(CN)5NO], was synthesized and studied by X-ray powder diffraction, infrared spectroscopy, Mössbauer spectroscopy, and atomic force microscopy. The results arising from this study indicate that this compound is anhydrous and crystallizes in the P222 orthorhombic symmetry. The unit cell parameters were quantified as a=16.5905(9) Å, b=12.3145(8) Å, and c=8.7576(5) Å. The measured and calculated density values are Dm=1.149 g/cm3 and Dc=1.145 g/cm3, respectively, with Z=2.

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

Influence of MeV Gamma Photons on Thermally Stimulated Exoelectron Emission from MgO Films

2021 ◽  
Vol 903 ◽  
pp. 162-167
Author(s):  
Marina Romanova ◽  
Regīna Burve ◽  
Yuri Dekhtyar ◽  
Kristaps Palskis ◽  
Vera Serga
Keyword(s):  
Atomic Force Microscopy ◽  
Radiation Dose ◽  
Surface Morphology ◽  
Percentage Increase ◽  
Exoelectron Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gamma Irradiated

The effect of 6 MeV gamma photons on thermally stimulated exoelectron emission (TSEE) spectra of MgO films was studied. The films were fabricated on Si/SiO2 substrates using the extraction-pyrolytic method. The crystalline structure and surface morphology of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). TSEE spectra of MgO films had emission peaks at about 450 oC and 525 oC. The area under the TSEE peaks increased after repeated TSEE measurements. In the case of gamma-irradiated films, the percentage increase in the area depended on the radiation dose, decreasing linearly with an increase in the radiation dose from 0 to 80 Gy. The results suggest that gamma radiation reduced the density of trapped electrons present in the as-grown MgO films or created competing hole traps that inhibited TSEE from the films.

Surface morphology of {100} faces ofL-arginine phosphate monohydrate single crystals investigated by atomic force microscopy

2005 ◽  
Vol 38 (4) ◽  
pp. 657-660 ◽  
Author(s):  
Y. L. Geng ◽  
D. Xu ◽  
X. Q. Wang ◽  
G. H. Zhang ◽  
G. W. Yu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Liquid Flow ◽  
Growth Conditions ◽  
Mother Solution ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Atomic Force

Surface morphology of {100} faces of LAP crystals was investigated by atomic force microscopy (AFM). Both the steps and the two-dimensional nuclei elongate along thebdirection, which is determined by the crystal structure. Fluctuations in the growth conditions could result in the formation of protuberances on the step fronts. Tree-like growth belts are initially observed on LAP crystals. It is assumed that the formation is caused by uneven liquid flow of the mother solution.

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