Investigation of face-centered-cubic Fe thin films using wedged samples

Author(s):  
R. K. Kawakami
2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.


2014 ◽  
Vol 911 ◽  
pp. 131-135 ◽  
Author(s):  
H. Abdullah ◽  
Noor Azwen Noor Azmy ◽  
Norshafadzila Mohammad Naim ◽  
Aisyah Bolhan ◽  
Aidil Abdul Hamid ◽  
...  

Polymers are excellent host materials for nanoparticles of metals and semiconductors. PVAAgCu nanocomposite was synthesized from chemical reduction, whereas PANIAgCu nanocomposite was synthesized by chemical oxidative polymerization. PVAAgCu and PANIAgCu thin films were deposited on the glass substrate by spin coating technique. The films were characterized by using XRD and AFM. The sensitivity of the samples was analyzed by IV measurement. The peaks in XRD patterns confirm the presence of Ag-Cu nanoparticles in face centered cubic structure. AFM images show the roughness of PVAAgCu and PANIAgCu increased as Ag concentration decreased and Cu concentration increased. I-V measurements indicate that the change in the current of the films increases with the presence of E. coli. The sensitivity on E. coli increases for PVAAgCu and PANIAgCu thin films with high concentration of Cu.


2020 ◽  
Vol 512 ◽  
pp. 167013
Author(s):  
Yu Miao ◽  
Xiaorui Chen ◽  
Shuanglong Yang ◽  
Kun Zheng ◽  
Zhongyuan Lian ◽  
...  

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Tizazu Abza ◽  
Dereje Gelanu Dadi ◽  
Fekadu Gashaw Hone ◽  
Tesfaye Chebelew Meharu ◽  
Gebremeskel Tekle ◽  
...  

Cobalt sulfide thin films were synthesized from acidic chemical baths by varying the deposition time. The powder X-ray diffraction studies indicated that there are hexagonal CoS, face-centered cubic Co3S4, and cubic Co9S8 phases of cobalt sulfide. The crystallite size of the hexagonal CoS phase decreased from 52.8 nm to 22.5 nm and that of the cubic Co9S8 phase increased from 11 nm to 60 nm as the deposition time increased from 2 hrs to 3.5 hrs. The scanning electron microscopic images revealed crack and pinhole free thin films with uniform and smooth background and few large polygonal grains on the surface. The band gap of the cobalt sulfide thin films decreased from 1.75 eV to 1.3 eV as the deposition time increased from 2 hrs to 3.5 hrs. The photoluminescence (PL) spectra of the films confirmed the emission of ultraviolet, violet, and blue lights. The intense PL emission of violet light at 384 nm had red shifted with increasing deposition time that could be resulted from the increase in the average crystallite size. The FTIR spectra of the films indicated the presence of OH, C-O-H, C-O, double sulfide, and Co-S groups. As the deposition time increased, the electrical resistivity of the cobalt sulfide thin films decreased due to the increase in both the crystallite size and the films’ thickness.


2020 ◽  
Vol 979 ◽  
pp. 180-184
Author(s):  
I. Karuppusamy ◽  
K. Ramachandran ◽  
S. Karuppuchamy

The CuI thin film has been successfully prepared by using cathodic electrodeposition method. The synthesized film was characterized using advanced techniques such as XRD, SEM-EDX and UV measurements. The films are crystallized in face centered cubic structure. The crystallinity is increasing for the applied potential of-0.3 V and the crystallinity deteriorates on increasing the potential above - 0.3 V. It was also observed that the applied voltage plays an important role. Homogeneously distributed triangular faceted morphology was observed from SEM. This is consistent with the result of XRD that electrodeposited CuI thin films grow preferential orientation along the (111) crystal plane.


2010 ◽  
Vol 97-101 ◽  
pp. 1360-1363 ◽  
Author(s):  
Yusrini Marita ◽  
Iskandar Idris Yaacob

Nickel-iron-silicon nitride nanocomposite thin films were prepared by electrodeposition technique. The deposition was performed at current density of 11.5 A dm-2. Nano-size silicon nitride was mixed in the electrolyte bath as dispersed phase. The effects of silicon nitride nanoparticulates in the nickel-iron nanocomposite thin films were investigated in relation to the amount of silicon nitride in the plating bath. X-ray diffraction (XRD) analysis showed that the deposited nickel iron film has face-centered cubic structure (FCC). However, a mixture of body-centered cubic (BCC) and face-centered cubic (FCC) phases were observed for nickel iron-silicon nitride nanocomposite films. The crystallite size of Ni-Fe nanocomposite coating decreased with increasing amount of silicon nitride in the film. From elemental mapping procedure, Si3N4 nanopaticles were uniformly distributed in the Ni-Fe film. The presence of silicon nitride increased the hardness of the film. The microhardness of the nickel-iron nanocomposite increased from 495 HV for nickel-iron film to 846 HV for nickel-iron nanocomposite film with 2 at. % Si. The coercivity of Ni-Fe nanaocomposite films increases with decreasing crystallite size.


2004 ◽  
Vol 19 (6) ◽  
pp. 1696-1702 ◽  
Author(s):  
X. Zhang ◽  
A. Misra ◽  
R.K. Schulze ◽  
C.J. Wetteland ◽  
H. Wang ◽  
...  

Bulk austenitic stainless steels (SS) have a face-centered cubic (fcc) structure. However, sputter deposited films synthesized using austenitic stainless steel targets usually exhibit body-centered cubic (bcc) structure or a mixture of fcc and bcc phases. This paper presents studies on the effect of processing parameters on the phase stability of 304 and 330 SS thin films. The 304 SS thin films with in-plane, biaxial residual stresses in the range of approximately 1 GPa (tensile) to approximately 300 MPa (compressive) exhibited only bcc structure. The retention of bcc 304 SS after high-temperature annealing followed by slow furnace cooling indicates depletion of Ni in as-sputtered 304 SS films. The 330 SS films sputtered at room temperature possess pure fcc phase. The Ni content and the substrate temperature during deposition are crucial factors in determining the phase stability in sputter deposited austenitic SS films.


2011 ◽  
Vol 110 (12) ◽  
pp. 123902 ◽  
Author(s):  
J. Demeter ◽  
E. Menéndez ◽  
K. Temst ◽  
A. Vantomme

2010 ◽  
Vol 24 (09) ◽  
pp. 905-910 ◽  
Author(s):  
H. C. JIANG ◽  
C. J. WANG ◽  
W. L. ZHANG ◽  
X. SI

TaN thin films were deposited on Al 2 O 3 wafers by DC reactive magnetron sputtering. The composition control by nitrogen partial flux in the working gas and the electrical properties of the samples were investigated in detail. The results show that the atomic number ratio of Ta to N in the samples can be adjusted from 4 to 0.88, corresponding to the contents of N in the samples from 20 at.% to 53 at.%, by adjusting the nitrogen partial flux from 2% to 6%. The main phases in the TaN x thin films are hexagonal Ta 2 N , body centered cubic Ta 10 N and face centered cubic TaN at lower N contents (lower than 28 at.%). However, at higher N contents (higher than 28 at.%), orthorhombic Ta 3 N 5 phase gradually precipitates out from the samples, and the hexagonal Ta 2 N phase disappears. When the N contents in the samples are lower than 28 at.%, the sheet resistance and resistivity of TaN x thin films are all low. With further increase of the N contents, the sheet resistance and resistivity of TaN x thin films increase sharply. The sheet resistance and the resistivity of the samples can be adjusted from 17 Ω/sq. to 77 Ω/sq., from 344 μΩ ·cm to 1030 μΩ ·cm by adjusting the nitrogen contents, respectively. When the nitrogen contents in the samples are lower than 28 at.%, the TCR of the samples is less than 50 ppm/°C. With further increase of N contents, the TCR of the samples increases sharply up to a few hundred ppm/°C.


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