The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact

2019 ◽  
Author(s):  
Asaf Nabiev ◽  
Galina Chucheva ◽  
Evgeny Goldman ◽  
Valentina Naryshkina
Keyword(s):  
Density Of States ◽  
Electron Mobility ◽  
Silicon Oxide ◽  
Effective Electron ◽  
Field Stress ◽  
Impurity Density ◽  
Inversion Channel

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

Thickness dependence of electron transport in pure a-Se photoconductive films

2014 ◽  
Vol 92 (7/8) ◽  
pp. 629-633 ◽  
Author(s):  
Derek Mortensen ◽  
George Belev ◽  
Kirill (Cyril) Koughia ◽  
Robert E. Johanson ◽  
S.O. Kasap
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Electric Field ◽  
Density Of States ◽  
Electron Mobility ◽  
Constant Electric Field ◽  
Thickness Dependence ◽  
The Other ◽  
Electron Lifetime ◽  
Thickness Independent

Electron transport in vacuum-deposited a-Se films with thicknesses varying from 13 to 501 μm has been investigated by conventional time-of-flight (TOF) and interrupted field TOF experiments. To separate the influences of electric field and the thickness, all TOF experiments were performed at a constant electric field. It has been found that the electron mobility is relatively constant in thick films (L > 50 μm) and increases in thinner films (L < 50 μm) with decreasing thickness. On the other hand, the electron lifetime is relatively thickness independent in films with thickness L > 50 μm, but drops sharply in thin films when L < 50 μm. These observations can be explained based on the density of states model that includes three types of traps forming Gaussian-like distributions within the mobility gap as reported in Koughia et al. (J. Appl. Phys. 97, 033706 (2005)).

Empirical Model for the Effective Electron Mobility in Silicon Nanowires

2014 ◽  
Vol 61 (11) ◽  
pp. 3601-3607 ◽  
Author(s):  
Ralf Granzner ◽  
Vladimir M. Polyakov ◽  
Christian Schippel ◽  
Frank Schwierz
Keyword(s):  
Empirical Model ◽  
Silicon Nanowires ◽  
Electron Mobility ◽  
Effective Electron

Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4521-4522 ◽  
Author(s):  
Masahiko Hiratani ◽  
Shin-ich Saito ◽  
Yasuhiro Shimamoto ◽  
Kazuyoshi Torii
Keyword(s):  
Electron Mobility ◽  
Gate Stacks ◽  
Effective Electron

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 437-440 ◽  
Author(s):  
Christian Strenger ◽  
Volker Haeublein ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Heiner Ryssel ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Interfacial Layer ◽  
Chemical Properties ◽  
Microstructural Properties ◽  
Layer Formation ◽  
Carbon Distribution ◽  
Transmission Electron ◽  
Inversion Channel ◽  
P Type ◽  
And Chemical Properties

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.

Electron Mobility Model of Strained Si1-xGex(001)

2011 ◽  
Vol 181-182 ◽  
pp. 378-382
Author(s):  
Hui Yong Hu ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Bin Shu
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Golden Rule ◽  
Mobility Model ◽  
Collision Term ◽  
Strained Si ◽  
Scattering Rate ◽  
Kp Theory

Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGexmaterials and the design of devices.

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