Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
2012 ◽
Vol 717-720
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pp. 437-440
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Keyword(s):
P Type
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N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.
2012 ◽
Vol 711
◽
pp. 134-138
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1989 ◽
Vol 47
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pp. 674-675
2011 ◽
Vol 287-290
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pp. 294-297
2007 ◽
Vol 556-557
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pp. 725-728
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2011 ◽
Vol 55-57
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pp. 1506-1510
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