The effects of plasma exposure on low- k dielectric materials

2012 ◽  
Author(s):  
J. L. Shohet ◽  
H. Ren ◽  
M. T. Nichols ◽  
H. Sinha ◽  
W. Lu ◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Plasma Exposure ◽  
Low K

Low-k Integration Using Metallic Hard Masks

2012 ◽  
Vol 187 ◽  
pp. 193-195 ◽  
Author(s):  
O. Joubert ◽  
Nicolas Possémé ◽  
Thierry Chevolleau ◽  
Thibaut David ◽  
M. Darnon
Keyword(s):  
Metal Contamination ◽  
High Sensitivity ◽  
Dielectric Materials ◽  
Plasma Exposure ◽  
Air Exposure ◽  
Hard Mask ◽  
Patterned Structures ◽  
Complex Integration ◽  
Interconnect Technology ◽  
Low K

For the 45 nm interconnect technology node, porous dielectric materials (p-SiOCH) have been introduced, leading to complex integration issues due to their high sensitivity upon FC etching and ashing plasma exposure [1, 2]. Thanks to Metallic hard mask (MHM) integration high selectivities towards dielectric materials (>100:1) can be reached and minimizes exposure of p-SiOCH films to ashing plasmas. However MHM such as TiN generates other issues such as i) metal contamination in the patterned structures and ii) growth of metal based residues on the top of the hard mask [3, 4, 5]. The residues growth, which is air exposure time dependent, directly impacts the yield performance with the generation of via and line opens [.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Effects of plasma exposure on defects in novel dielectric materials

2011 ◽  
Author(s):  
H. Ren ◽  
M.T. Nichols ◽  
G. Jiang ◽  
G.A. Antonelli ◽  
Y. Nishi ◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Plasma Exposure

Via Cleaning Technology for Post Etch Residues

2005 ◽  
Vol 103-104 ◽  
pp. 357-360
Author(s):  
B.G. Sharma ◽  
Chris Prindle
Keyword(s):  
Semiconductor Industry ◽  
Dielectric Materials ◽  
Copper Interconnects ◽  
Limiting Factor ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Widespread Acceptance ◽  
Cleaning Technology ◽  
Rc Delay ◽  
Low K

Interconnect RC delay is the limiting factor for device performance in submicron semiconductor technology. Copper and low-k dielectric materials can reduce this delay and have gained widespread acceptance in the semiconductor industry. The presence of copper interconnects provides unprecedented challenges for via cleaning technology and requires the development of novel process chemistries for improved device capability.

Thermal conductivity study of porous low-k dielectric materials

2000 ◽  
Vol 77 (1) ◽  
pp. 145-147 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Low K

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

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