Distribution of Misfit Dislocations and Elastic Mechanical Stresses in Metamorphic Buffer InAlAs Layers of Various Constructions

2021 ◽  
Vol 63 (1) ◽  
pp. 84-89
Author(s):  
D. B. Pobat ◽  
V. A. Solov’ev ◽  
M. Yu. Chernov ◽  
S. V. Ivanov
Keyword(s):  
Mechanical Stresses ◽  
Misfit Dislocations ◽  
Metamorphic Buffer

Equilibrium Lattice Relaxation and Misfit Dislocations in Continuously- and Step-Graded InxGa1-xAs/GaAs (001) and GaAs1-yPy/GaAs (001) Metamorphic Buffer Layers

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1520009 ◽  
Author(s):  
Tedi Kujofsa ◽  
John E. Ayers
Keyword(s):  
Dislocation Density ◽  
Buffer Layer ◽  
Minimum Energy ◽  
Lattice Relaxation ◽  
Structure Type ◽  
Elastic Stiffness ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Metamorphic Buffer

The inclusion of metamorphic buffer layers (MBL) in the design of lattice-mismatched semiconductor heterostructures is important in enhancing reliability and performance of optical and electronic devices. These metamorphic buffer layers usually employ linear grading of composition, and materials including InxGa1-xAs and GaAs1-yPy have been used. Non-uniform and continuously graded profiles are beneficial for the design of partially-relaxed buffer layers because they reduce the threading dislocation density by allowing the distribution of the misfit dislocations throughout the metamorphic buffer layer, rather than concentrating them at the interface where substrate defects and tangling can pin dislocations or otherwise reduce their mobility as in the case of uniform compositional growth. In this work we considered heterostructures involving a linearly-graded (type A) or step-graded (type B) buffer layer grown on a GaAs (001) substrate. For each structure type we present minimum energy calculations and compare the cases of cation (Group III) and anion (Group V) grading. In addition, we studied the (i) average and surface in-plane strain and (ii) average misfit dislocation density for heterostructures with various thickness and compositional profile. Moreover, we show that differences in the elastic stiffness constants give rise to significantly different behavior in these two commonly-used buffer layer systems.

scholarly journals Распределение дислокаций несоответствия и упругих механических напряжений в метаморфных буферных слоях InAlAs разной конструкции

2021 ◽  
Vol 63 (1) ◽  
pp. 85
Author(s):  
Д.В. Побат ◽  
В.А. Соловьев ◽  
М.Ю. Чернов ◽  
С.В. Иванов
Keyword(s):  
Dislocation Density ◽  
Buffer Layer ◽  
Composition Profile ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Bottom Part ◽  
Metamorphic Buffer ◽  
Significant Difference ◽  
Order Of Magnitude ◽  
Total Energy Minimum

Here we report on computing of the distribution of the equilibrium misfit dislocation density ρ(z) as well as the elastic strain ε(z) along the grow direction for metamorphic buffer layer InAlAs/GaAs(001) with high In content (x ≤ 0.87) and different design of composition profile: step-, linear- and convex-graded. For the computation, an approach based on the iterative finding the system total energy minimum have been used. It was shown, that the significant difference between different types of the buffer layer is observed for the ρ(z) distribution rather than for ε(z). In contrast to traditionally used step- and linear-graded metamorphic buffer layers, which are characterized by homogenous spreading of misfit dislocations, the main part of such dislocations in the convex-graded composition profile is concentrated at the bottom part of the buffer layer near to heterointerface InAlAs/GaAs, and the dislocation density drop by more than one order of magnitude along the layer thickness reaching near the surface the minimal value among the buffer types. Despite the fact, that the significant effect of interaction between misfit dislocations is not taken into account in the computation, the results obtained allowed one to determine the main features of the ρ(z) and ε(z) distributions in the different InAlAs metamorphic buffer layers, which were previously obtained experimentally. Thus, such an approach can be effectively utilized for the development of the metamorphic heterostructure based devices.

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Growth of spinel into alumina

1987 ◽  
Vol 45 ◽  
pp. 294-295
Author(s):  
Y. Kouh Simpson ◽  
C. B. Carter
Keyword(s):  
Misfit Dislocations ◽  
Phase Boundaries ◽  
Large Rotation ◽  
Alumina Phase ◽  
Metallic Interfaces ◽  
Small Rotation

The structure of spinel/alumina phase boundaries has recently been studied using the selected- area diffraction technique. It has been found that there exist several dominant topotactic relationships; of these, the two most common situations are when the {111} plane of spinel is parallel to either the (0001) plane or the {1120} plane of alumina. In both of these cases, it has been found that there is often a small rotation from exact topotaxy (typically 0° to 2° but with larger rotations possible) which partially eliminates the need for misfit dislocations. This rotation is a special phenomenon that may be unique to non-metallic interfaces such as phase boundaries in ceramics. In this report, a special spinel/alumina interface in which a large rotation from the exact topotaxy exists between the (111) plane of spinel and the (OOOl) plane of alumina is discussed.

Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

1990 ◽  
Vol 48 (4) ◽  
pp. 342-343
Author(s):  
D. Gerthsen
Keyword(s):  
Lattice Constant ◽  
Atomic Structure ◽  
Spherical Aberration ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas On Si ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Intersection Line ◽  
Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

Quasiperiodic interfaces: HREM observations of grain and phase boundaries

1990 ◽  
Vol 48 (4) ◽  
pp. 332-333
Author(s):  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
Direct Determination ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Atomic Structures ◽  
Periodic Arrays ◽  
Parameter Ratio ◽  
Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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