THE FORMATION OF THIN FILMS OF IRON OXIDE

1955 ◽  
Vol 33 (2) ◽  
pp. 298-304 ◽  
Author(s):  
E. J. Caule ◽  
M. Cohen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Free Energy ◽  
Iron Oxide ◽  
Oxide Film ◽  
Metal Oxide ◽  
Film Formation ◽  
Free Energy Change ◽  
Dissociation Pressure ◽  
Dry Cell

It is assumed that the free energy of a thin film of iron oxide is a function of its thickness. The effect on the dissociation pressure is calculated and the condition for stability of thickness is stated. A possible method for measuring the free energy change involved in oxide film formation on metal surfaces is presented which is based on measurements of the e.m.f. of the dry cell metal | oxide | oxygen.

Investigation of the physical, optical, and chemical properties of phase segregated AlCoOx thin films from a novel hexol-type cluster

2021 ◽  
Author(s):  
Jordan D. Levine ◽  
Meredith C. Sharps ◽  
Elizabeth A. Cochran ◽  
David A. Marsh ◽  
William H. Casey ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxide Film ◽  
Metal Oxide ◽  
Chemical Properties ◽  
Mixed Metal Oxide ◽  
Thin Film Characterization ◽  
Metal Oxide Film ◽  
And Chemical Properties

We report the fabrication and thin film characterization of an aluminum and cobalt mixed metal–oxide film that has been solution deposited from a novel hexol-type inorganic cluster.

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

scholarly journals Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition

2021 ◽  
Author(s):  
Cyril Robinson Azariah John Chelliah ◽  
Rajesh Swaminathan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Pulsed Laser ◽  
Primary Objective ◽  
Binary Oxides ◽  
Binary Metal ◽  
Metal Oxide Nanostructures ◽  
Binary Metal Oxide

The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.

Characterization of chemically modified thin films for optimization of metal CMP applications

2013 ◽  
Vol 1560 ◽  
Author(s):  
G. Bahar Basim ◽  
Ayse Karagoz ◽  
Zeynep Ozdemir
Keyword(s):  
Thin Films ◽  
Oxide Film ◽  
Metal Oxide ◽  
Film Structure ◽  
Protective Oxide ◽  
Metal Oxide Thin Films ◽  
Chemically Modified ◽  
Surface Active Agents ◽  
Protective Oxide Film ◽  
The Stability

ABSTRACTMetal CMP applications necessitate the formation of a protective oxide film in the presence of surface active agents, oxidizers, pH regulators and other chemicals to achieve global planarization. Formation and mechanical properties of the chemically modified metal oxide thin films in CMP determine the stresses develop at the interfaces delineating the stability and protective nature of the chemically altered films on the surface of the metal wafer. The balance between the stresses built in the film structure versus the mechanical actions provided during the process can be used to optimize the process variables and furthermore help define new planarization techniques for the next generation microelectronic device manufacturing. In this study, the preliminary studies were concentrated on the very well established tungsten CMP applications and furthermore, titanium CMP applications were presented as a part of surface nano-structuring methodology for biomedical applications by stressing the synergistic effect of protective metal oxide film of titanium in this advanced application.

Low-Temperature, Nontoxic Water-Induced Metal-Oxide Thin Films and Their Application in Thin-Film Transistors

2015 ◽  
Vol 25 (17) ◽  
pp. 2564-2572 ◽  
Author(s):  
Guoxia Liu ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films

scholarly journals Ceramic Oxide Thin Film Formation Utilizing Biological Processes

1989 ◽  
Vol 174 ◽  
Author(s):  
B. J. Tarasevich ◽  
P. C. Rieke
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Formation ◽  
Nucleation And Growth ◽  
Oxide Thin Film ◽  
Biological Processes ◽  
Oxide Materials ◽  
Ceramic Oxide ◽  
Mineralization Processes ◽  
Properties Of Materials

AbstracMineralization processes used by bioorganisms have been adapted for the nucleation and growth of ceramic oxide thin films onto surfaces from aqueous solutions. These strategies include the use of surfaces derivatized with specific functional groups that control the nucleation and growth and properties of materials deposited. Iron oxide materials were deposited onto functionalized polystyrene surfaces, resulting in the formation of thin films composed of densely packed, nanometer-sized crystallites. Evidence for the formation of oriented crystallites was found. This process may have advantages over conventional thin film processing methods due to the ability to systematically control properties of materials deposited.

scholarly journals Metal phthalocyanines: thin-film formation, microstructure, and physical properties

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21716-21737
Author(s):  
Rosemary R. Cranston ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
Small Molecules ◽  
Film Formation ◽  
Proper Function ◽  
Next Generation ◽  
Metal Phthalocyanines ◽  
Thin Film Formation

Metal phthalocyanines (MPcs) are an abundant class of conjugated small molecules comprising and their integration into thin films is critial for the proper function of next generation applications.

Magnetically assembled iron oxide nanoparticle coatings and their integration with pseudo-spin-valve thin films

2017 ◽  
Vol 5 (2) ◽  
pp. 252-263 ◽  
Author(s):  
Chengpeng Jiang ◽  
Sheung Mei Ng ◽  
Chi Wah Leung ◽  
Philip W. T. Pong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Iron Oxide ◽  
Spin Valve ◽  
Iron Oxide Nanoparticle ◽  
Oxide Nanoparticle ◽  
Nanoparticle Coatings

Magnetically assembled nanoparticle coatings modulate the properties and performances of pseudo-spin-valve thin films through nanoparticle–thin film interactions.

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