Electrical Conduction Properties of Liquid Vanadates. I. Vanadium Pentoxide

1972 ◽  
Vol 50 (17) ◽  
pp. 2865-2870 ◽  
Author(s):  
R. C. Kerby ◽  
J. R. Wilson
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Temperature Coefficient ◽  
Vanadium Pentoxide ◽  
Electrical Conduction ◽  
Pressure Coefficient ◽  
Positive Temperature ◽  
Temperature Range ◽  
Partial Pressures ◽  
Conduction Properties

The electrical conductivity of liquid vanadium pentoxide was measured as a function of temperature and oxygen partial pressure. A positive temperature coefficient and a negative oxygen partial pressure coefficient of conduction were found for the temperature range 670 to 1000 °C and oxygen partial pressures from 0.1 to 1.0 atm. The activation energy of conduction was 0.77 eV and the oxygen partial pressure coefficient was −0.16. At oxygen partial pressures less than 0.1 atm, for the same temperature range, a negative temperature coefficient and a negative oxygen partial pressure coefficient of conduction were found.An n-type semiconduction model was used to explain the electrical conduction properties of liquid vanadium pentoxide at oxygen partial pressures greater than 0.1 atm. At lower oxygen partial pressures, electrical conduction was considered to occur by collective-electron conduction in partially filled 3d bands, due to an overlapping of the diffuse valence and conduction bands. The overlapping could result from a decrease in the cation separation distance in the melt due to the removal of oxygen ions from the melt.

Influence of High Oxygen Partial Pressure on the Positive Temperature Coefficient Resistivity of BaTiO3

1991 ◽  
Vol 251 ◽  
Author(s):  
Ben Huybrechts ◽  
K. Ishizaki ◽  
M. Takata
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Grain Boundaries ◽  
Temperature Coefficient ◽  
Arrhenius Plot ◽  
Positive Temperature Coefficient ◽  
High Oxygen ◽  
Positive Temperature ◽  
High Oxygen Partial Pressure ◽  
Partial Pressures

ABSTRACTThe influence of high oxygen partial pressures on the PTC behavior of non acceptor doped BaTiO3 is studied by using oxygen-hot-isostatic-press (O2-HIP). Annealing in high oxygen partial pressures increased the maximum resistivity with a factor 3, also the minimum resistivity and the gradient in the Arrhenius plot, i.e. resistivity versus the reciprocal of the temperature, increased. The results are analyzed using the well accepted Heywang model. The changes after O2-HIPping can be explained with an increase in acceptor density at the grain boundaries.

Electrical Conduction Properties of Liquid Vanadates. II. The Sodium Vanadates

1972 ◽  
Vol 50 (17) ◽  
pp. 2871-2876 ◽  
Author(s):  
R. C. Kerby ◽  
J. R. Wilson
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Electrical Conduction ◽  
Ionic Conduction ◽  
Pressure Coefficient ◽  
Sodium Oxide ◽  
Liquid Sodium ◽  
Oxide Concentration ◽  
Increasing Temperature ◽  
Conduction Properties

The liquid sodium vanadates exhibited n-type semiconduction properties at sodium oxide concentrations less than 10 mol% and ionic conduction properties at concentrations greater than 25 mol%. The transition from semiconduction to ionic conduction occurred gradually as the sodium oxide concentration increased. The activation energy of conduction decreased with increasing sodium oxide concentration and increasing temperature. Negative oxygen partial pressure coefficients of conduction were found for sodium oxide concentrations less than 25 mol%. The oxygen partial pressure coefficient decreased with increasing temperature and sodium oxide concentration. The electrical conduction mechanism was considered to change from delocalized electron or polaron movement between V4+ and V5+ centers for the semiconducting liquid sodium vanadates to the probable movement of sodium and oxygen ions as the charge-carrying species forthe ionic liquid sodium vanadates.

Electrical conduction in superconductive Nd2−xCexCuO4−y at high temperatures

1991 ◽  
Vol 6 (1) ◽  
pp. 42-45 ◽  
Author(s):  
Fumio Munakata ◽  
Takashi Kawano ◽  
Ayumi Nozaki ◽  
H. Yamauchi
Keyword(s):  
Electrical Resistivity ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Electrical Conduction ◽  
Pressure Dependence ◽  
Carrier Density ◽  
Oxygen Vacancies ◽  
Oxygen Deficiency ◽  
Charge Carriers ◽  
Partial Pressures

The temperature dependence of electrical resistivity of Nd2−xCexCuO4−y (x = 0.0, 0.1, 0.15, 0.18) was measured at oxygen partial pressures of 2.08 × 10−1 1.8 × 10−2, 8.1 × 10−4, and 3.3 × 10−6 atm. The oxygen-partial-pressure dependence of resistivity indicated that the charge carriers in Nd2−xCexCuO4−y were electrons. According to the resistivity data of these compounds at temperatures above 770 K, Ce doping affected the relation between the oxygen deficiency and oxygen partial pressure in Nd2CuO4−y: the doping of Ce worked to hinder the formation of oxygen vacancies in the lattice. Moreover, the carrier density after Ce doping was found to be much less than the value anticipated from the amount of the dopant. This suggested that not all the doped Ce ions worked as donors. That is, the relative amount of Ce3+ ions compared to that of Ce4+ ions increased as the total amount of the doped Ce ions increased.

Recrystallization of Oxygen Contaminated Al Films

1986 ◽  
Vol 71 ◽  
Author(s):  
G.J. Van Der Kolk ◽  
M.J. Verkerk
Keyword(s):  
Grain Size ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Relative Increase ◽  
Partial Pressures ◽  
Average Grain Size

AbstractAl was evaporated at oxygen partial pressures, PO2, varying between 10−7 and 10−4 Pa on substrates of silicon nitride. The substrate temperature was varied between 20 °C and 250°C. The films were annealed at temperatures up to 500°C.For Al films deposited at 20°C, it was found that the average grain size decreases with increasing oxygen partial pressure. After annealing recrystallization was observed. The relative increase of grain size was less for higher values of pO2. Annealing gave rise to a broad grain size distribution.For Al films deposited at 250°C, the presence of oxygen caused the growth of rough inhomogeneous films. This inhomogeneous structure remained during annealing.

Controlled partial melting during isobaric and isothermal processing of dipcoated Bi-2212/Ag tapes

1998 ◽  
Vol 13 (12) ◽  
pp. 3580-3586 ◽  
Author(s):  
A. L. Crossley ◽  
J. L. MacManus-Driscoll
Keyword(s):  
Phase Diagram ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Melting ◽  
Coulometric Titration ◽  
Processing Route ◽  
Optimum Processing ◽  
Partial Pressures ◽  
Titration Technique

A detailed study has been made of the control and optimization of partial melting of dipcoated Bi2Sr2Ca1Cu2O8+δAg0.1 (Bi-2212) tapes using reduced oxygen partial pressures. A coulometric titration technique has been employed to vary the oxygen partial pressure in a region of the phase diagram corresponding to binary melting, and the amount of partial melting has been quantified. Using this information, tapes have been processed using both isothermal and isobaric techniques. An optimum processing route was determined which combined isothermal and isobaric processes. Highly aligned material at the point of optimum melting was obtained.

Tensile Properties and Creep Behavior of SiC-Based Fibers under Various Oxygen Partial Pressures

2005 ◽  
Vol 475-479 ◽  
pp. 1333-1336 ◽  
Author(s):  
Jan Ji Sha ◽  
J.S. Park ◽  
Tatsuya Hinoki ◽  
Akira Kohyama ◽  
J. Yu
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Tensile Properties ◽  
Creep Behavior ◽  
Elevated Temperatures ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Sic Fibers ◽  
Partial Pressures ◽  
Ar Gas

Three kinds of atmospheres (air, highly-pure Ar and ultra highly-pure Ar gas) with different oxygen partial pressures were applied to investigate the tensile properties and creep behavior of SiC fibers such as Hi-NicalonTM and TyrannoTM-SA. These fibers were annealed and crept at elevated temperatures ranging from1273-1773 K in such environments. After annealing at 1773 K, the room temperature tensile strengths of SiC-based fibers decreased with decreasing the oxygen partial pressure and the near stoichiometric fiber TyrannoTM-SA shows excellent strength retention. At temperatures above the 1573 K, the creep resistance of SiC fibers evaluated by bending stress relaxation (BSR) method under high oxygen partial pressure was lower than that of in low oxygen partial pressure. The microstructural features on these fibers were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

Über die Instabilität von NiTiO3 unter der Wirkung eines Sauerstoffpartialdruck-Gradienten Instability of NiTiO3 in an Oxygen-Potential Gradient

1981 ◽  
Vol 36 (10) ◽  
pp. 1211-1214 ◽  
Author(s):  
W. Laqua
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Oxygen Potential ◽  
Potential Gradient ◽  
Simultaneous Action ◽  
Partial Pressures ◽  
Quantitative Explanation

Abstract If a NiTiO3 poly crystal is exposed to an oxygen-potential gradient -established by the simultaneous action of two different oxygen partial pressures -it will be decomposed into its component oxides NiO and TiO2 despite the fact, that the compound is stable at both the lower and the higher oxygen partial pressure. A quantitative explanation of this phenomenon will be given below.

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

scholarly journals Electrical Characterization of La2-xSrxCuO4-y Superconductors

1989 ◽  
Vol 44 (1) ◽  
pp. 26-28 ◽  
Author(s):  
G. Chiodelli ◽  
G. Campari-Viganò ◽  
V. Massarotti ◽  
G. Flor
Keyword(s):  
Electrical Resistivity ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Solid Solutions ◽  
Electrical Characterization ◽  
Superconducting Transition ◽  
Electrical Behaviour ◽  
Temperature Range

Abstract The electrical behaviour of La2-xSrxCuO4-y solid solutions (with x = 0, x = 0.025, x = 0.05, and x = 0.15) at temperatures between 10 and 900 K and under different oxygen partial pressure pO2 = 1 ÷ 10-6 atm) has been investigated. The samples prepared and measured under an O2 flux (i.e., with y = 0) show a superconducting transition with Tc = 46, 29. 37 K for x = 0. 0.05 and 0.15, respectively. The samples with x = 0.025, y = 0, and x = 0, y ≠ 0 exhibit no sign of superconductivity. In the temperature range 100-900 K. La2CuO4 is semiconducting, whereas the electrical resistivity is independent of temperature for the x =0.025 sample, and the x = 0.05 and x = 0.15 are metallic.

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