STABLE HIGH POWER GaN-ON-GaN HEMT

2004 ◽  
Vol 14 (03) ◽  
pp. 738-744 ◽  
Author(s):  
K. K. CHU ◽  
P. C. CHAO ◽  
J. A. WINDYKA
Keyword(s):  
Power Density ◽  
Output Power ◽  
High Power ◽  
High Performance ◽  
Ambient Conditions ◽  
Free Standing ◽  
Gain Compression ◽  
Power Added Efficiency ◽  
Gan Hemt ◽  
Drain Bias

High power AlGaN/GaN HEMTs on free-standing GaN substrates with excellent stability have been demonstrated for the first time. When operated at a drain bias of 50V, devices without a field plate showed a record CW output power density of 10.0W/mm at 10GHz with an associated power-added efficiency of 45%. The efficiency reaches a maximum of 58% with an output power density of 5.5W/mm under a drain bias of 25V at 10GHz. Long-term stability of device RF operation was also examined. Under ambient conditions, devices biased at 25V and driven at 3dB gain compression remained stable at least up to 1,000 hours, degrading only by 0.35dB in output power. Such results clearly demonstrate the feasibility of GaN - on - GaN HEMT as an alternative device technology to the GaN - on - SiC HEMT in supporting reliable, high performance microwave power applications.

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

A GAN ON SIC HFET DEVICE TECHNOLOGY FOR WIRELESS INFRASTRUCTURE APPLICATIONS

2007 ◽  
Vol 17 (01) ◽  
pp. 11-14
Author(s):  
B. Green ◽  
H. Henry ◽  
K. Moore ◽  
J. Abdou ◽  
R. Lawrence ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Thermal Model ◽  
Operating Frequency ◽  
Power Added Efficiency ◽  
Twofold Increase ◽  
Channel Temperature ◽  
Drain Bias ◽  
Wireless Infrastructure ◽  
Device Technology

This paper presents Freescale's baseline GaN device technology for wireless infrastructure applications. At 48 V drain bias and 2.1 GHz operating frequency 10-11 W/mm, 62-67% power-added efficiency (PAE) is realized on 0.3 mm devices and 74 W (5.9 W/mm), 55% PAE is demonstrated for 12.6 mm devices. A simple thermal model shows that a more than twofold increase in channel temperature is responsible for limiting the CW power density on the 12.6 mm compared to 0.3 mm devices. The addition of through wafer source vias to improve gain and tuning the device in a fixture optimized for efficiency yield an output power of 57W (4.7 W/mm), PAE of 66%, and a calculated channel temperature of approximately 137°C at a 28 V bias.

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

2011 ◽  
Vol 32 (12) ◽  
pp. 124003 ◽  
Author(s):  
Bo Liu ◽  
Zhihong Feng ◽  
Sen Zhang ◽  
Shaobo Dun ◽  
Jiayun Yin ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Sapphire Substrate ◽  
Gan Hemt

scholarly journals Hierarchical Carbon Microtube@Nanotube Core–Shell Structure for High-Performance Oxygen Electrocatalysis and Zn–Air Battery

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Wenfu Xie ◽  
Jianming Li ◽  
Yuke Song ◽  
Shijin Li ◽  
Jianbo Li ◽  
...  
Keyword(s):  
Energy Density ◽  
Power Density ◽  
High Power ◽  
High Performance ◽  
Rational Design ◽  
Specific Capacity ◽  
High Mass ◽  
Core Shell ◽  
High Power Density ◽  
Mass Loading

AbstractZinc–air batteries (ZABs) hold tremendous promise for clean and efficient energy storage with the merits of high theoretical energy density and environmental friendliness. However, the performance of practical ZABs is still unsatisfactory because of the inevitably decreased activity of electrocatalysts when assembly into a thick electrode with high mass loading. Herein, we report a hierarchical electrocatalyst based on carbon microtube@nanotube core–shell nanostructure (CMT@CNT), which demonstrates superior electrocatalytic activity for oxygen reduction reaction and oxygen evolution reaction with a small potential gap of 0.678 V. Remarkably, when being employed as air–cathode in ZAB, the CMT@CNT presents an excellent performance with a high power density (160.6 mW cm−2), specific capacity (781.7 mAhg Zn −1 ) as well as long cycle stability (117 h, 351 cycles). Moreover, the ZAB performance of CMT@CNT is maintained well even under high mass loading (3 mg cm−2, three times as much as traditional usage), which could afford high power density and energy density for advanced electronic equipment. We believe that this work is promising for the rational design of hierarchical structured electrocatalysts for advanced metal-air batteries.

A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Circuit World ◽  
2020 ◽  
Vol 46 (4) ◽  
pp. 243-248
Author(s):  
Min Liu ◽  
Panpan Xu ◽  
Jincan Zhang ◽  
Bo Liu ◽  
Liwen Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
High Efficiency ◽  
Common Source ◽  
Power Performance ◽  
Matching Network ◽  
Content Type ◽  
Power Added Efficiency ◽  
Saturated Output Power

Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

An improved DRBL AlGaN/GaN HEMT with high power added efficiency

2019 ◽  
Vol 89 ◽  
pp. 212-215 ◽  
Author(s):  
Hujun Jia ◽  
Shunwei Zhu ◽  
Mei Hu ◽  
Yibo Tong ◽  
Tao Li ◽  
...  
Keyword(s):  
High Power ◽  
Power Added Efficiency ◽  
Gan Hemt

scholarly journals Achieving high power factor and output power density in p-type half-Heuslers Nb1-xTixFeSb

2016 ◽  
Vol 113 (48) ◽  
pp. 13576-13581 ◽  
Author(s):  
Ran He ◽  
Daniel Kraemer ◽  
Jun Mao ◽  
Lingping Zeng ◽  
Qing Jie ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Factor ◽  
High Power ◽  
Peak Power ◽  
Large Scale ◽  
The Past ◽  
High Power Factor ◽  
P Type ◽  
High Output

Improvements in thermoelectric material performance over the past two decades have largely been based on decreasing the phonon thermal conductivity. Enhancing the power factor has been less successful in comparison. In this work, a peak power factor of ∼106 μW⋅cm−1⋅K−2is achieved by increasing the hot pressing temperature up to 1,373 K in the p-type half-Heusler Nb0.95Ti0.05FeSb. The high power factor subsequently yields a record output power density of ∼22 W⋅cm−2based on a single-leg device operating at between 293 K and 868 K. Such a high-output power density can be beneficial for large-scale power generation applications.

Design of Broadband GaN HEMT Power Amplifier with Ku Band

2012 ◽  
Vol 263-266 ◽  
pp. 39-42 ◽  
Author(s):  
Zhi Qun Cheng ◽  
Li Wei Jin ◽  
Wen Shi
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Operating Conditions ◽  
Power Gain ◽  
Power Added Efficiency ◽  
Gan Hemt ◽  
Dc Bias ◽  
Simulation Results ◽  
Two Stages ◽  
Ku Band

A broadband power amplifier module based on GaN HEMT operating Ku band is designed. TGF2023-02 Chip of GaN HEMT from TriQuint is modeled first. And then the module consists of two stages amplifiers. The first stage amplifier is single-stage amplifier and the second is two-way combiner amplifier. Wilkinson power divider, DC bias circuits and microstrip matching circuits are simulated and designed carefully. Simulation results showed that the amplifier module exhibits a power gain of 7 dB, power added efficiency of 13.9%, and an output power of 16 W under Vds=28 V, Vgs=-3.6 V, CW operating conditions at the frequency of 15 GHz.

Wideband, high-efficiency, high-power GaN amplifiers, using MIC and quasi-MMIC technologies, in the 1–4 GHz range

2014 ◽  
Vol 7 (1) ◽  
pp. 1-12 ◽  
Author(s):  
Chamssedine Berrached ◽  
Diane Bouw ◽  
Marc Camiade ◽  
Kassem El-Akhdar ◽  
Denis Barataud ◽  
...  
Keyword(s):  
Output Power ◽  
High Power ◽  
High Efficiency ◽  
Continuous Wave ◽  
Power Gain ◽  
Frequency Range ◽  
Final Size ◽  
Trade Off ◽  
Power Added Efficiency ◽  
Circuit Technology

In this paper, the designs and experimental performances of wideband (higher than one octave) high-efficiency, high-power amplifiers (HPA) working in the 1–4 GHz range, using the same GaN process, are presented. They are based on the Bode–Fano integrals, which can be applied to a trade-off calculation between bandwidth and efficiency. Firstly, an microwave intregrated circuits (MIC) wideband HPA, externally matched, is presented. It generates a continuous wave (CW) output power (Pout) greater than 40 W, a power gain (GP) higher than 9.2 dB and a corresponding power added efficiency (PAE) (drain efficiency (DE)) ranged between 36 and 44% (40 and 48%) over the 1–3 GHz bandwidth. Two other amplifiers have been designed upon the same theoretical methodology, with a passive GaAs MMIC circuit technology, enabling to reduce the final size down to 420 mm2. The first internally matched Quasi monolithic microwave intergrated circuits (Quasi-MMIC) single-ended HPA generates a pulsed Pout greater than 25 W, GP higher than 9.8 dB, and a corresponding PAE (DE) ranged between 37 and 52.5% (40 and 55%) over the 2–4 GHz bandwidth. The second internally matched Quasi-MMIC HPA, based on balanced architecture, generates a pulsed Pout higher than 45 W, GP higher than 9.5 dB and PAE (DE) ranged between 33 and 44% (38 and 50%) over the 2–4 GHz bandwidth. These results are among the best ones published in terms of PAE and Pout in instantaneous octave bandwidth in the 1–4 GHz frequency range.

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