OHMIC CONTACTS ON DIAMOND BY R. F. SPUTTERING AND Ti-Au METALLIZATION
2002 ◽
Vol 16
(06n07)
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pp. 927-931
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Keyword(s):
X Ray
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Low resistance ohmic contacts were fabricated on diamond films. A high boron concentration (~1020 cm -3) was obtained on the surface by ion implantation. The initial film of Ti (20nm) followed by Au (100nm) was deposited by r. f. sputtering. I-V measurements showed that the as-deposited contacts were ohmic. Upon annealing, the ohmic characteristics of the contacts were improved significantly. The specific contacts resistivity decreased from 6.2 × 10-3 to 1.2 × 10-6Ω cm 2 as a result of post-deposition annealing. The X-ray photoelectron spectroscopy analysis indicated the formation of titanium carbide at the Ti/diamond interface in the as-deposited and annealed states. A low oxygen concentration was observed.