FORMATION OF GaN FILM BY AMMONIATING Ga2O3 DEPOSITED ON Si SUBSTRATE WITH ELECTROPHORESIS
2002 ◽
Vol 16
(28n29)
◽
pp. 4267-4270
◽
Keyword(s):
X Ray
◽
The gallium nitride (GaN) films have been successfully fabricated on silicon (111) substrates through ammoniating Ga 2 O 3 films deposited by electrophoresis. The structure and composition of the formed films were characterized by Fourier transform infrared (FTIR) transmission spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results indicate that the films formed in this study are polycrystalline GaN with hexagonal wurtzite structure.
2019 ◽
Vol 74
(10)
◽
pp. 937-944
◽
2011 ◽
Vol 56
(5)
◽
pp. 944-949
◽
1994 ◽
Vol 12
(4)
◽
pp. 2074-2080
◽
2020 ◽
Vol 35
(4-5)
◽
pp. 389-398