Modeling of a micro-biological sensor field effect for the enzymatic detection of glucose

2019 ◽  
Vol 33 (25) ◽  
pp. 1950289
Author(s):  
Oussama Zeggai ◽  
Moussaab Belarbi ◽  
Amaria Ouledabbes ◽  
Hadj Mouloudj
Keyword(s):  
Field Effect ◽  
Glucose Sensor ◽  
Field Effect Transistors ◽  
Simulated Data ◽  
Biomolecular Detection ◽  
Glucose Levels ◽  
Sensor Field ◽  
Proposed Model ◽  
Glucose Molecule ◽  
Enzymatic Detection

During these last years, the substantially biological field effect transistors (BioFET) are one of the most abundant classes of electronic sensors for biomolecular detection. The determination of glucose levels using these biosensors, especially in the medical diagnosis and food industries, is gaining popularity. Among them, ion-sensitive field effect transistor (ISFET) is considered one of the most intriguing approaches in electrical biosensitivity technology. The glucose sensor ISFET detects the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. In this paper, first of all we examine some of the main advantages in this field, the perspective of applications and the main issues in order to stimulate a broader interest in the development of biosensors based on ISFET and to extend their applications for a reliable and sensitive glucose analysis. Thereafter, a biosensor with field effect sensitive to the ions for the detection of glucose is modeled analytically. In the proposed model, the glucose concentration is presented according to the gate voltage. The simulated data show that the analytical model can be used with an electrochemical glucose sensor to predict mechanism’s behavior of detection in the biosensors.

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

scholarly journals Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Haiwu Xie
Keyword(s):  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Direction ◽  
High Sensitivity ◽  
Subthreshold Swing ◽  
Voltage Sensitivity ◽  
Label Free ◽  
Current Sensitivity ◽  
Sensor Field

Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.

scholarly journals A Study on Improving Switching Characteristics According to a Circuit Analysis Technique in Converter Applications Using Gallium Nitride Field Effect Transistors

Energies ◽  
2019 ◽  
Vol 12 (17) ◽  
pp. 3280
Author(s):  
Tae-Kue Kim
Keyword(s):  
Gallium Nitride ◽  
Frequency Response ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Analysis Model ◽  
Frequency Responses ◽  
Analysis Technique ◽  
Proposed Model ◽  
Before And After ◽  
Switching Characteristics

In this paper, we studied how the switching characteristics of a power conversion system could be improved using gallium nitride (GaN) devices. To this end, a circuit system applying GaN field effect transistors (FETs) was modeled to derive a mathematical differential equation, and the transfer function of the system was obtained through the modeled equation to propose the analysis model. The frequency response of the system where the GaN FET device was applied was analyzed through the proposed modeling circuit, and the method to compensate for characteristics of the system was proposed. The applied method and the proposed model were validated through the comparative analysis on the frequency responses before and after the frequency response. This study’s results were proposed that the problem occurring in systems with GaN FETs could be solved through this theoretical and systematic method.

LABEL-FREE BIOMOLECULAR DETECTION USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2008 ◽  
Vol 03 (06) ◽  
pp. 415-431 ◽  
Author(s):  
HYE RYUNG BYON ◽  
SUPHIL KIM ◽  
HEE CHEUL CHOI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
High Sensitivity ◽  
Detection Methods ◽  
Label Free ◽  
Biomolecular Detection ◽  
Great Opportunity ◽  
High Level

Carbon nanotube field effect transistor (FET) type biosensors have been widely investigated as one of the promising platforms for highly sensitive personalized disease-monitoring electronic devices. Combined with high level cutting edge information technology (IT) infra systems, carbon nanotube transistor biosensors afford a great opportunity to contribute to human disease care by providing early diagnostic capability. Several key prerequisites that should be clarified for the real application include sensitivity, reliability, reproducibility, and expandability to multiplex detection systems. In this brief review, we introduce the types, fabrication, and detection methods of single-walled carbon nanotube FET (SWNT-FET) devices. As surface functionalization of the devices by which nonspecific bindings (NSBs) are efficiently prohibited is also another important issue regarding reliable biosensors, we discuss several key strategies about surface passivation along with examples of various biomolecules such as proteins, DNA, small molecules, aptamers, viruses, and cancer and neurodegenerative disease markers which have been successfully sensed by SWNT-FET devices. Finally, we discuss proposed detection mechanisms, according to which strategies for fabricating sensor devices having high sensitivity are determined. Two main mechanisms — charge transfer (or electrostatic gate effect) and Schottky barrier effect, depending on the place where biomolecules are adsorbed — will be covered.

scholarly journals Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

Electronics ◽  
2020 ◽  
Vol 9 (3) ◽  
pp. 479 ◽  
Author(s):  
Fabrizio Palma
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Species ◽  
Metal Oxide Semiconductor ◽  
The Self ◽  
Oxide Semiconductor ◽  
Mixing Process ◽  
Frequency Detection ◽  
Proposed Model

Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors.

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