scholarly journals A Study on Improving Switching Characteristics According to a Circuit Analysis Technique in Converter Applications Using Gallium Nitride Field Effect Transistors

Energies ◽  
2019 ◽  
Vol 12 (17) ◽  
pp. 3280
Author(s):  
Tae-Kue Kim
Keyword(s):  
Gallium Nitride ◽  
Frequency Response ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Analysis Model ◽  
Frequency Responses ◽  
Analysis Technique ◽  
Proposed Model ◽  
Before And After ◽  
Switching Characteristics

In this paper, we studied how the switching characteristics of a power conversion system could be improved using gallium nitride (GaN) devices. To this end, a circuit system applying GaN field effect transistors (FETs) was modeled to derive a mathematical differential equation, and the transfer function of the system was obtained through the modeled equation to propose the analysis model. The frequency response of the system where the GaN FET device was applied was analyzed through the proposed modeling circuit, and the method to compensate for characteristics of the system was proposed. The applied method and the proposed model were validated through the comparative analysis on the frequency responses before and after the frequency response. This study’s results were proposed that the problem occurring in systems with GaN FETs could be solved through this theoretical and systematic method.

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

Steep switching characteristics of single-gated feedback field-effect transistors

2016 ◽  
Vol 28 (5) ◽  
pp. 055205 ◽  
Author(s):  
Minsuk Kim ◽  
Yoonjoong Kim ◽  
Doohyeok Lim ◽  
Sola Woo ◽  
Kyoungah Cho ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Switching Characteristics

Gallium nitride tunneling field-effect transistors exploiting polarization fields

2020 ◽  
Vol 116 (7) ◽  
pp. 073502
Author(s):  
Alexander Chaney ◽  
Henryk Turski ◽  
Kazuki Nomoto ◽  
Zongyang Hu ◽  
Jimy Encomendero ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Field Effect Transistors

Fast switching characteristics in vertical organic field effect transistors

2013 ◽  
Vol 103 (7) ◽  
pp. 073502 ◽  
Author(s):  
Michael Greenman ◽  
Ariel J. Ben-Sasson ◽  
Zhihua Chen ◽  
Antonio Facchetti ◽  
Nir Tessler
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Fast Switching ◽  
Switching Characteristics

Package Design and Analysis for Vertical Gallium Nitride Field Effect Transistors

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000058-000063
Author(s):  
John Harris ◽  
David Huitink ◽  
Dan Ewing
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Development Stage ◽  
Wide Band Gap ◽  
Package Design ◽  
Bulk Gan ◽  
Effect Transistor

Abstract Gallium nitride (GaN) is a wide band gap semi-conductor with superior electron mobility to silicon carbide. These properties allow for the design of high temperature capable devices with excellent on resistance and breakdown voltage for their size. However, bulk GaN is difficult to fabricate and doping for field effect transistor (FET) control has been elusive, so vertical GaN devices are not commonplace. This paper measures the characteristics of vertical GaN FETs in the development stage and discusses packaging them for fabrication feedback and for future high temperature aplications.

Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors

2012 ◽  
Vol 76 ◽  
pp. 1-4 ◽  
Author(s):  
Qingmin Liu ◽  
Lin Dong ◽  
Yiqun Liu ◽  
Roy Gordon ◽  
Peide D. Ye ◽  
...  
Keyword(s):  
Frequency Response ◽  
Field Effect ◽  
Field Effect Transistors
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