Effects of Y2O3 insertion layer on anisotropic magnetoresistance of Ni81Fe19 films

2016 ◽  
Vol 30 (07) ◽  
pp. 1650072
Author(s):  
Shuyun Wang ◽  
Huaxue Huang ◽  
Yang Sun ◽  
Tiejun Gao ◽  
Yuan He
Keyword(s):  
Phase Composition ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Magnetic Hysteresis ◽  
Anisotropic Magnetoresistance ◽  
Vibrating Sample Magnetometer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
20 Nm

A series of Ta(4 nm)/Y2O[Formula: see text]/Ni[Formula: see text]Fe[Formula: see text](20 nm)/Y2O[Formula: see text]/Ta(3 nm) films were prepared on glass substrates by magnetron sputtering under appropriate conditions. AMR value, phase composition and magnetic hysteresis hoop of Ni[Formula: see text]Fe[Formula: see text] films were measured and analyzed by four-point probe technology, X-ray diffraction (XRD) and vibrating sample magnetometer (VSM), respectively. Influence of Y2O3 which work as oxidation intercalation on AMR values of Ni[Formula: see text]Fe[Formula: see text] films was investigated. The experiment results show that, at the substrate temperature of 450[Formula: see text]C, the AMR value of the film with Y2O3 layer thickness of 2.5 nm can reach 4.61%, increasing by 71.3% compares with the film without Y2O3 layer.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Effects of ZnO layer on anisotropy magnetoresistance of Ni81Fe19 films

2014 ◽  
Vol 28 (06) ◽  
pp. 1450043 ◽  
Author(s):  
Shuyun Wang ◽  
Yuanmei Gao ◽  
Tiejun Gao ◽  
Yuan He ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Layer Thickness ◽  
Magnetic Thin Films ◽  
Anisotropic Magnetoresistance ◽  
Experimental Conditions ◽  
Method Effects ◽  
20 Nm

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.

Properties of Nanosized Tin Oxide Thin Film Prepared by Reactive Magnetron Sputtering

2007 ◽  
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Quartz Glass ◽  
Tin Oxide ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.

Deposition of aluminum Oxynitride Films by Magnetron Sputtering: Effect of Bombardment and Substrate Heating on Structural and Mechanical Properties

1995 ◽  
Vol 388 ◽  
Author(s):  
Russell V. Smilgys ◽  
Eric Takamura ◽  
Irwin L. Singer ◽  
Steven W. Robey ◽  
Douglas A. Kirkpatrick
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Aluminum Oxynitride ◽  
X Ray Diffraction ◽  
Etch Pits ◽  
X Ray ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Planar Magnetron ◽  
Continuous Indentation

ABSTRACTAluminum oxynitride films, 1 μm thick, are deposited onto glass substrates by planar magnetron sputtering from an alumina target in a mixture of nitrogen and argon. one set of films is deposited onto glass substrates that are heat sunk to a holder, whose temperature is held below 100°C. a second set of films is deposited onto glass substrates that are mechanically clamped to a holder, whose temperature is allowed to rise up to 250°C. Characterization by continuous indentation testing, secondary electron microscopy, and x-ray diffraction reveals significant differences in mechanical properties and surface structure between the two sets of films. Films deposited with holder cooling have a smooth surface and no evidence of crystallinity; films deposited without holder cooling have etch pits on their surface that vary with position across the substrate. the later films show crystallinity and have twice the hardness and a 60% greater elastic modulus.

Compositional dependence of thin films of BiPbSrCaCuO on target to substrate distance

1995 ◽  
Vol 73 (1-2) ◽  
pp. 35-37
Author(s):  
J. Murdoch ◽  
F. S. Razavi ◽  
J. A. Moore
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Atomic Composition ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Distance ◽  
Radioisotope Source ◽  
Complex Variation

Using magnetron sputtering techniques, several thin films of superconducting BiPbSrCaCuO were fabricated by varying the distance between the substrate (single crystal of MgO with polished (100) plane) and the targets. During the deposition the gas pressure was kept constant at 0.3 mbar (1 mbar = 0.1 kPa) and the substrate temperature was kept at 700 °C. An energy-dispersive X-ray fluorescence was designed using a radioisotope source with a secondary target and a Si(Li) X-ray spectrometer and it was used to measure the atomic composition of the film quantitatively. It was found that the Ca concentration relative to Sr increases linearly as the distance between the substrate and the targets increases. However, both Cu and Bi show a more complex variation of concentration with distance. The X-ray diffraction results also indicated that the films are grown epitaxially along the C axis, which showed a semiconducting behaviour with TC,zero below 60 K.

Influence of Zinc-Zirconium Substitution on Magnetic Properties of Ba(ZnZr)xFe12-2xO19 Hexaferrite Prepared by the Molten Salt Method

2009 ◽  
Vol 79-82 ◽  
pp. 2071-2074 ◽  
Author(s):  
Hai Feng Li ◽  
Rong Zhou Gong ◽  
Xian Wang ◽  
Li Ren Fan ◽  
Gang He ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molten Salt ◽  
Magnetic Hysteresis ◽  
Magnetic Hysteresis Loop ◽  
Chemical Compositions ◽  
Molten Salt Method ◽  
Vibrating Sample Magnetometer ◽  
Hexagonal Ferrites ◽  
X Ray Diffraction ◽  
X Ray

M-type hexaferrites Ba(ZnZr)xFe12-2xO19 (x=0, 0.5, 1.0, 1.5) powders, have been synthesized by molten salt method, where x varies from 0 to 1.5 in steps of 0.5. X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and vibrating sample magnetometer(VSM) were used to analyze the structures and magnetic properties. The results showed that, the magnetoplumbite structures for all samples calcining at 1100°C have been formed. The magnetic hysteresis loop measurements of the hexagonal ferrites powders showed that the saturation magnetization (Ms), the remanent magnetization (Mr), and the coercitivity (Hc) of ferrites depend strongly on the chemical compositions of materials. The data showed that the max Hc was obtained when substitution of x=1.0 (Hc=63.9 Oe), while the best Ms was obtained when substitution of x=0.5 (Ms=54.02 emu/g). Zn and Zr substitutions greatly modified the magnetic properties of BaM hexaferrite.

Investigation on AZO Films Deposited by Radio-Frequency Reactive Magnetron Sputtering

2013 ◽  
Vol 320 ◽  
pp. 35-39
Author(s):  
Cheng Long Kang ◽  
Jin Xiang Deng ◽  
Min Cui ◽  
Chao Man ◽  
Le Kong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Scanning Electron

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.

Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences

2014 ◽  
Vol 28 (26) ◽  
pp. 1450210 ◽  
Author(s):  
Zhong Hua ◽  
Xiangcheng Meng ◽  
Yaming Sun ◽  
Wanqiu Yu ◽  
Dong Long
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Stacking Order ◽  
Microstructure Morphology ◽  
Hall Effect Measurements ◽  
Uv Visible

The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.

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