Design of a charge pump for high voltage driver applications based on 0.35 μm BCD technology

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740008
Author(s):  
Tiezhu Zhu ◽  
Yuning Zhang ◽  
Rendong Ji
Keyword(s):  
System Theory ◽  
Output Feedback ◽  
High Efficiency ◽  
Supply Voltage ◽  
Output Feedback Control ◽  
Charge Pump ◽  
Control Module ◽  
Simulation Based ◽  
Power Noise ◽  
A Charge

Based on the switched capacitor system theory, a new charge pump is designed as the driver of the H-bridge power circuits. The proposed circuit is added with the output feedback control module to realize the steady output, lower the ripple and power noise, and improve the transforming efficiency. Simulation based on 0.35 [Formula: see text] BCD350GE process demonstrates that the circuit has a ripple voltage as low as 200 mV and reaches a high efficiency up to 70% with a load as much as 20 mA when the supply voltage changes from 8 V to 36 V.

scholarly journals A HIGH EFFICIENCY CHARGE PUMP FOR LOW VOLTAGE DEVICES

2014 ◽  
pp. 16-19
Author(s):  
AAMNA ANIL ◽  
RAVI KUMAR SHARMA
Keyword(s):  
High Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Charge Pumps ◽  
Nonvolatile Memories ◽  
A Charge ◽  
Low Supply Voltage ◽  
Capacitor Charge ◽  
Lower Voltage

A charge pump is a kind of DC to DC converter that uses capacitors as energy storage elements to create a higher or lower voltage power source. Charge pumps make use of switching devices for controlling the connection of voltage to the capacitor. Charge pumps have been used in the nonvolatile memories, such as EEPROM and Flash memories, for the programming of the floating-gate devices. They can also be used in the low-supply-voltage switched-capacitor systems that require high voltage to drive the analog switched. This paper includes voltage analysis of different charge pumps. On the basis of voltage analysis a new charge pump is proposed.

scholarly journals Design and Verification of a Charge Pump in Local Oscillator for 5G Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1009
Author(s):  
Rui Guo ◽  
Zhenghao Lu ◽  
Shaogang Hu ◽  
Qi Yu ◽  
Limei Rong ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Phase Error ◽  
Charge Pump ◽  
Local Oscillator ◽  
Low Power Consumption ◽  
Passive Devices ◽  
Compensation Technique ◽  
A Charge ◽  
Fast Settling ◽  
Large Output

A charge pump (CP) that has low current mismatch to reduce the locking time of the Phase-Locked Loop (PLL) is proposed. The design is promising in 5G applications with the capabilities of fast settling and low power consumption. In this design, a charge pump architecture consists of an operational power amplifier (OPA), switches, three D flip-flops (DFFs) and passive devices. A phase error compensation technique is introduced in the charge pump to reduce the locking time. The current mismatch, which is mainly due to the leakage current, is below 1% for a large output voltage headroom of 84% of the supply voltage. An 18.4% reduction in the settling time is realized by the proposed design.

scholarly journals The application of GHz band charge pump rectifier and rectenna array for satellite internal wireless system

2019 ◽  
Vol 6 (2) ◽  
pp. 190-195
Author(s):  
Ce Wang ◽  
Bo Yang ◽  
Seishiro Kojima ◽  
Naoki Shinohara
Keyword(s):  
High Efficiency ◽  
Power Transmission ◽  
Charge Pump ◽  
Wireless Power ◽  
Wireless System ◽  
Optimum Load ◽  
In Series ◽  
A Charge ◽  
Conversion Efficiencies ◽  
Class F

AbstractAn internal wireless system (IWS) for satellites was proposed in a previous study to reduce the weight of satellites. It is a system that uses wireless communication modules to communicate between the satellite's subsystems. We proposed a complete IWS that employs microwave wireless power transmission technology, and we proposed a design of GHz band high efficiency rectifier based charge pump rectifiers with a class-f filter called class-f charge pump rectifiers. We theoretically compare the diode losses in a charge pump and single shunt rectifier, and experimentally verify the results. Apart from this, we consider that the class-f charge pump rectifiers will be used for a rectenna array. In order to know the direct current (DC) load change of class-f charge pump circuits is connected as a rectenna array, we measured the conversion efficiencies of a 2 by 2 rectenna array, connected in series and in parallel. The results of the experiment indicate that the optimum load of the rectifier changes to four times DC load when connected in series, and to 1/4 the DC load when connected in parallel.

Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis

2002 ◽  
Author(s):  
Hui Pan ◽  
Thomas Gibson
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Charge Pump ◽  
Front Side ◽  
Pump Failure ◽  
Electrical Failure ◽  
Optical Proximity Correction ◽  
A Charge

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.

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