scholarly journals Design and Verification of a Charge Pump in Local Oscillator for 5G Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1009
Author(s):  
Rui Guo ◽  
Zhenghao Lu ◽  
Shaogang Hu ◽  
Qi Yu ◽  
Limei Rong ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Phase Error ◽  
Charge Pump ◽  
Local Oscillator ◽  
Low Power Consumption ◽  
Passive Devices ◽  
Compensation Technique ◽  
A Charge ◽  
Fast Settling ◽  
Large Output

A charge pump (CP) that has low current mismatch to reduce the locking time of the Phase-Locked Loop (PLL) is proposed. The design is promising in 5G applications with the capabilities of fast settling and low power consumption. In this design, a charge pump architecture consists of an operational power amplifier (OPA), switches, three D flip-flops (DFFs) and passive devices. A phase error compensation technique is introduced in the charge pump to reduce the locking time. The current mismatch, which is mainly due to the leakage current, is below 1% for a large output voltage headroom of 84% of the supply voltage. An 18.4% reduction in the settling time is realized by the proposed design.

scholarly journals Current mismatch reduction in charge pumps using regulated current stealing-injecting transistors for PLLs

2021 ◽  
Vol 24 (1) ◽  
pp. 61
Author(s):  
Mohd Khairi Zulkalnain ◽  
Yan Chiew Wong
Keyword(s):  
Metal Oxide ◽  
Supply Voltage ◽  
Channel Length ◽  
Feedback Mechanism ◽  
Phase Locked Loops ◽  
Voltage Controlled Oscillator ◽  
Op Amp ◽  
Compensation Technique ◽  
A Charge ◽  
Low Supply Voltage

A charge pump for phase locked loops (PLL) with a novel current mismatch compensation technique is proposed. The proposed circuit uses a simple yet effective current stealing-injecting (CSI) technique and feedback to reduce mismatch between the negative-channel-metal-oxide (NMOS) and positive-channel-metal-oxide (PMOS) transistors. The current stealing transistor steals the current from a replica branch and mirrors it to the output where it is added to the output branch by the injecting transistor. A feedback mechanism is used to set the drain voltages of both branches to be equal and mitigate channel length modulation and ensure high accuracy. The proposed circuit was designed on Silterra 130nm technology and simulated using Cadence Spectre. The simulation results show that the proposed circuit yields a maximum of 0.107% and minimum of 0.00465% current mismatch while operating at a low supply voltage of 800mV for a range of 100mV to 700mV. The proposed design uses only one rail-to-rail op amp for compensating the mismatch and an addition of 4 transistors and utilizing 75% of the supply voltage for high voltage controlled oscillator (VCO) tuning range.

scholarly journals Phase Locking in Millimeter Wave Frequency Synthesizers - Design overview of Charge Pump Phase Locked Loops

2020 ◽  
Vol 19 ◽  
Keyword(s):  
Communication Systems ◽  
Phase Locking ◽  
Low Frequency ◽  
Charge Pump ◽  
Local Oscillator ◽  
Phase Locked Loop ◽  
System Level ◽  
Phase Locked Loops ◽  
Frequency Components ◽  
A Charge

Phase Locked Loops are key blocks which are widely adopted in all area of electronics, especially transceivers in wireless communication systems. The application of Phase Locked Loop varies from generation of local oscillator signal for upconversion and down conversion, generation and distribution of clock signals and jitter reduction. The most extensive use of Phase Locked Loop is for frequency synthesis. The requirements of synthesizer architectures depend on various system requirements and specifications which are based on regulatory standards. The design of Phase Locked Loop components involves the consideration of various techniques to resolve the nonidealities at front end high frequency components as well as back end low frequency components. This paper presents the background and importance of a Phase Locked Loop, various approaches over the years, design choices for each block and practical design methodology for Charge Pump Phase Locked Loops. This paper also presents the system level design of Phase Locked Loop and supply noise interactions among sub modules inside a charge pump Phase Locked Loop

Design of a charge pump for high voltage driver applications based on 0.35 μm BCD technology

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740008
Author(s):  
Tiezhu Zhu ◽  
Yuning Zhang ◽  
Rendong Ji
Keyword(s):  
System Theory ◽  
Output Feedback ◽  
High Efficiency ◽  
Supply Voltage ◽  
Output Feedback Control ◽  
Charge Pump ◽  
Control Module ◽  
Simulation Based ◽  
Power Noise ◽  
A Charge

Based on the switched capacitor system theory, a new charge pump is designed as the driver of the H-bridge power circuits. The proposed circuit is added with the output feedback control module to realize the steady output, lower the ripple and power noise, and improve the transforming efficiency. Simulation based on 0.35 [Formula: see text] BCD350GE process demonstrates that the circuit has a ripple voltage as low as 200 mV and reaches a high efficiency up to 70% with a load as much as 20 mA when the supply voltage changes from 8 V to 36 V.

scholarly journals A HIGH EFFICIENCY CHARGE PUMP FOR LOW VOLTAGE DEVICES

2014 ◽  
pp. 16-19
Author(s):  
AAMNA ANIL ◽  
RAVI KUMAR SHARMA
Keyword(s):  
High Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Charge Pumps ◽  
Nonvolatile Memories ◽  
A Charge ◽  
Low Supply Voltage ◽  
Capacitor Charge ◽  
Lower Voltage

A charge pump is a kind of DC to DC converter that uses capacitors as energy storage elements to create a higher or lower voltage power source. Charge pumps make use of switching devices for controlling the connection of voltage to the capacitor. Charge pumps have been used in the nonvolatile memories, such as EEPROM and Flash memories, for the programming of the floating-gate devices. They can also be used in the low-supply-voltage switched-capacitor systems that require high voltage to drive the analog switched. This paper includes voltage analysis of different charge pumps. On the basis of voltage analysis a new charge pump is proposed.

Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis

2002 ◽  
Author(s):  
Hui Pan ◽  
Thomas Gibson
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Charge Pump ◽  
Front Side ◽  
Pump Failure ◽  
Electrical Failure ◽  
Optical Proximity Correction ◽  
A Charge

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.

scholarly journals The Design of a Charge Pump Circuit and System with Input Impedance Modulation for a Flexible-Type Thermoelectric Generator with High-Output Impedance

Electronics ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 1212
Author(s):  
Kazuma Koketsu ◽  
Toru Tanzawa
Keyword(s):  
Input Impedance ◽  
Thermoelectric Generator ◽  
Charge Pump ◽  
Operating Voltage ◽  
Output Impedance ◽  
Two Phase ◽  
Pump System ◽  
High Output Impedance ◽  
A Charge ◽  
High Output

This paper describes a charge pump system for a flexible thermoelectric generator (TEG). Even though the TEG has high-output impedance, the system controls the input voltage to keep it higher than the minimum operating voltage by modulating the input impedance of the charge pump using two-phase operation with low- and high-input impedance modes. The average input impedance can be matched with the output impedance of the TEG. How the system can be designed is also described in detail. A design demonstration was performed for the TEG with 400 Ω. The fabricated system was also measured with a flexible-type TEG based on carbon nanotubes. Even with an output impedance of 1.4 kΩ, the system converted thermal energy into electric power of 30 μW at 2.5 V to the following sensor ICs.

A monolithic low-power-consumption driver circuit based on a Dickson charge pump for MEMS actuator applications

2020 ◽  
Vol 164 ◽  
pp. 107683 ◽  
Author(s):  
Hui Peng ◽  
Herbert De Pauw ◽  
Pieter Bauwens ◽  
Jan Doutreloigne
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Charge Pump ◽  
Low Power Consumption ◽  
Driver Circuit
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