Electronic structure and transport properties of graphene/h-BN controlled by boundary potential and magnetic field

2020 ◽  
Vol 34 (16) ◽  
pp. 2050180
Author(s):  
Jian Sun ◽  
Lei Xu ◽  
Jun Zhang
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Band Structure ◽  
Transport Properties ◽  
Energy Gap ◽  
Edge State ◽  
Stable Configuration ◽  
Edge States ◽  
Boundary Potential ◽  
Lattice Matched

We study the band structure of the lattice-matched graphene/[Formula: see text]-BN bilayer system in the most stable configuration. An effective way to individually manipulate the edge state by the boundary potentials is proposed. It is shown that the boundary potential can not only shift and deform the edge bands, but also modify the energy gap. We also explore the transport properties of graphene/[Formula: see text]-BN under a magnetic field. The boundary potential can change the distribution of the edge states, resulting in an interesting evolution of the quantized conductance.

scholarly journals Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2098
Author(s):  
Paolo Marconcini ◽  
Massimo Macucci
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Charge Transport ◽  
Shot Noise ◽  
Energy Gap ◽  
Mass Term ◽  
Edge States ◽  
Graphene Ribbon ◽  
The Magnetic Field ◽  
Armchair Graphene

We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects. In particular, we focus on the behavior for high values of the magnetic field: we notice that when it is sufficiently large, the effect of the antidots vanishes and shot noise disappears, as a consequence of the formation of edge states crawling along the boundaries of the structure without experiencing any interaction with the antidots.

Electronic Structure and Itinerant Magnetism of Hydrogenated Graphene Nanofilms

2019 ◽  
pp. 60-69
Author(s):  
V.V. Ilyasov ◽  
I.V. Ershov ◽  
O.M. Holodova ◽  
I.G. Popova
Keyword(s):  
Electronic Structure ◽  
Energy Spectrum ◽  
Band Structure ◽  
Energy Gap ◽  
Electronic Energy ◽  
Hydrogen Chemisorption ◽  
Multilayer Graphene ◽  
Itinerant Magnetism ◽  
Hydrogenated Graphene ◽  
Dimensional Quantization

The peculiarities of spin-polarized electronic structure of multilayer graphene nanofilm (4-GNL:H) within the framework of Kohn --- Sham approximation were studied in the present work. The calculated band structure and spin-resolved electronic energy spectrum of the 4-GNL:H system were correlated with experimental UPS and XANES spectra of thin hydrogenated a-C:H films. As the band structure calculations show there is a dimensional quantization of energy spectrum in the 4-GNL:H system, and the energy gap of 0.11 eV appears in the spectrum. The self-consistent calculations also predict the existence of itinerant magnetism in the system, conditioned by hydrogen chemisorption.

Transport Properties of Topological Insulator Bi0.83Sb0.17 Nanowires

2015 ◽  
Vol 1785 ◽  
pp. 1-6
Author(s):  
L.A. Konopko ◽  
A.A. Nikolaeva ◽  
T.E. Huber ◽  
J.P. Ansermet
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Transport Properties ◽  
Topological Insulator ◽  
Energy Gap ◽  
Oscillation Amplitude ◽  
Glass Capillary ◽  
Wire Axis ◽  
Temperature Dependences ◽  
The Wire

ABSTRACTWe have investigated the transport properties of topological insulator based on single-crystal Bi0.83Sb0.17 nanowires. The single-crystal nanowire samples in the diameter range 200 nm – 1.1 μm were prepared by the high frequency liquid phase casting in a glass capillary using an improved Ulitovsky technique; they were cylindrical single-crystals with (1011) orientation along the wire axis. In this orientation, the wire axis makes an angle of 19.5o with the bisector axis C1 in the bisector-trigonal plane. Bi0.83Sb0.17 is a narrow gap semiconductor with energy gap at L point of Brillouin zone ΔE= 21 meV. In accordance with the measurements of the temperature dependence of the resistivity of the samples resistance increases with decreasing temperature, but at low temperatures decrease in the resistance is observed. This effect, decrease in the resistance, is a clear manifestation of the interesting properties of topological insulators - the presence on its surface of a highly conducting zone. The Arrhenius plot of resistance R in samples with diameter d=1.1 µm and d=200 nm indicates a thermal activation behavior with an activation gap ΔE= 21 and 35 meV, respectively, which proves the presence of the quantum size effect in these samples. We found that in the range of diameter 1100 nm - 200 nm when the diameter decreases the energy gap is growing as 1/d. We have investigated magnetoresistance of Bi0.83Sb0.17 nanowires at various magnetic field orientations. From the temperature dependences of Shubnikov de Haas oscillation amplitude for different orientation of magnetic field we have calculated the cyclotron mass mc and Dingle temperature TD for longitudinal and transverse (B||C3 and B||C2) directions of magnetic fields, which equal 1.96*10-2m0, 9.8 K, 8.5*10-3m0 , 9.4 K and 1.5*10-1m0 , 2.8 K respectively. The observed effects are discussed.

Linear AC transport in T-stub and crossed silicene nanosystems

2018 ◽  
Vol 32 (03) ◽  
pp. 1850016
Author(s):  
Yun-Lei Sun ◽  
En-Jia Ye
Keyword(s):  
Electric Field ◽  
Transport Properties ◽  
External Electric Field ◽  
Nearest Neighbor ◽  
Transport Theory ◽  
Energy Gap ◽  
Local Density ◽  
Tight Binding ◽  
Edge State ◽  
Topological Quantum

In this work, we theoretically study the linear AC transport properties in T-stub and crossed zigzag silicene nanosystems. The DC conductance and AC emittance are numerically calculated based on the tight-binding approach and AC transport theory, by considering the nearest-neighbor hopping, second-nearest-neighbor spin-orbit interaction (SOI) and external electric field. The relatively strong SOI of silicene was demonstrated to induce a topological quantum edge state in the nanosystems by the local density of states, which eliminates the AC emittance response at the Dirac point. Further investigations suggest that the SOI-induced AC transport is topologically protected from the changes of geometrical size. Moreover, the AC transport properties of these nanosystems can be tuned by the external electric field, which would open an energy gap and destroy the topological quantum state, making them trivial band insulators.

Theory of Semiconductor Heterojunctions

1982 ◽  
Vol 18 ◽  
Author(s):  
J. Pollmann ◽  
A. Mazur
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Properties ◽  
Short Review ◽  
Band Edge ◽  
Band Structures ◽  
Semiconductor Heterojunctions ◽  
Lattice Matched

A short review of characteristic electronic properties of heterojunction interfaces is given. Band edge discontinuities and interface band structures for lattice-matched junctions are discussed in detail. The examples presented include non-polar and polar junctions as well as overlayer systems. The results of involved calculations are interpreted in terms of simple physically appealing pictures by directly relating the changes in bonds across an interface to the resulting bands in the interface band structure. The meaning of the results for the transport properties of semiconductor heterojunctions is briefly assessed.

scholarly journals Zero modes, energy gap, and edge states of anisotropic honeycomb lattice in a magnetic field

2009 ◽  
Vol 80 (12) ◽  
Author(s):  
Kenta Esaki ◽  
Masatoshi Sato ◽  
Mahito Kohmoto ◽  
Bertrand I. Halperin
Keyword(s):  
Magnetic Field ◽  
Energy Gap ◽  
Honeycomb Lattice ◽  
Edge States ◽  
Zero Modes

scholarly journals Topologically Protected Edge State in Two-Dimensional Su–Schrieffer–Heeger Circuit

Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-8 ◽  
Author(s):  
Shuo Liu ◽  
Wenlong Gao ◽  
Qian Zhang ◽  
Shaojie Ma ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Band Structure ◽  
Edge State ◽  
Edge States ◽  
Exciting Field ◽  
Circuit Performance ◽  
Topological Materials ◽  
Full Control ◽  
Potential Applications ◽  
Physical Phenomena ◽  
Gap Width

Topological circuits, an exciting field just emerged over the last two years, have become a very accessible platform for realizing and exploring topological physics, with many of their physical phenomena and potential applications as yet to be discovered. In this work, we design and experimentally demonstrate a topologically nontrivial band structure and the associated topologically protected edge states in an RF circuit, which is composed of a collection of grounded capacitors connected by alternating inductors in the x and y directions, in analogy to the Su–Schrieffer–Heeger model. We take full control of the topological invariant (i.e., Zak phase) as well as the gap width of the band structure by simply tuning the circuit parameters. Excellent agreement is found between the experimental and simulation results, both showing obvious nontrivial edge state that is tightly bound to the circuit boundaries with extreme robustness against various types of defects. The demonstration of topological properties in circuits provides a convenient and flexible platform for studying topological materials and the possibility for developing flexible circuits with highly robust circuit performance.

Electronic structure and transport properties of antiferromagnetic double perovskite Y2AlCrO6

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 80415-80423 ◽  
Author(s):  
Indrani Das ◽  
Sadhan Chanda ◽  
Sujoy Saha ◽  
Alo Dutta ◽  
Sourish Banerjee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Transport Properties ◽  
Electronic Band Structure ◽  
Magnetic Ordering ◽  
Double Perovskite ◽  
Electronic Band ◽  
Band Structure Calculations ◽  
Structure Calculations

The antiferromagnetic G-type magnetic ordering in Y2AlCrO6 (YAC) has been investigated by the electronic band structure calculations and successive experiments.

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