A STUDY OF DEPOSITED YBaCuO THIN FILMS BY D.C. MAGNETRON SPUTTERING

1988 ◽  
Vol 01 (09n10) ◽  
pp. 369-374 ◽  
Author(s):  
W. SHI ◽  
J. SUN ◽  
W. YAO ◽  
J. JIANG ◽  
L. LIU ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transition Temperature ◽  
Electron Probe ◽  
Bulk Sample ◽  
Critical Transition ◽  
Critical Transition Temperature ◽  
Sputtering Deposition ◽  
X Ray ◽  
Deposition Processes

The YBaCuO thin films with critical transition temperature above 77K (in our experiments, they are 83K) have been prepared successfully. The sintered oxides of Y, Ba and Cu with proper composition was used as target. To control the parameters during sputtering deposition processes is very important to obtain high Tc thin film. The composition and phase structure were investigated by means of X-fluoroscope, electron-probe and X-ray diffractometer. The second ions spectroscopies of film and bulk sample were investigated using SIMS. It is clear that thin films lost their oxygen more easily under bombardment of Ar+ with certain energy.

Electron Probe Microanalysis of Thin Films and Multilayers Using the Computer Program XFILM

2009 ◽  
Vol 16 (1) ◽  
pp. 21-32 ◽  
Author(s):  
Xavier Llovet ◽  
Claude Merlet
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Computer Program ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Emission Model ◽  
X Ray

AbstractXFILM is a computer program for determining the thickness and composition of thin films on substrates and multilayers by electron probe microanalysis. In this study, we describe the X-ray emission model implemented in the latest version of XFILM and assess its reliability by comparing measured and calculated k-ratios from thin-film samples available in the literature. We present and discuss examples of applications of XFILM that illustrate the capabilities of the program.

Modulus and Internal Friction of W-Doped VO2 Thin Films

2011 ◽  
Vol 130-134 ◽  
pp. 3343-3346 ◽  
Author(s):  
H.Q. Li ◽  
X.X. He ◽  
T. Liu ◽  
Z.H. Nie ◽  
X.Q. Lv
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Internal Friction ◽  
Transition Temperatures ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Metal Phase Transition ◽  
Deposition Techniques

The thin films of W-doped VO2were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO2thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2is more than that of un-doped VO2, but more smoother.

STRUCTURAL INSTABILITY AND SUPERCONDUCTIVITY OF THE (Nd, Gd, Ce)2CuO4 SYSTEM

2005 ◽  
Vol 19 (12) ◽  
pp. 607-612
Author(s):  
A. V. POP ◽  
C. PELSHENKE ◽  
O. COZAR
Keyword(s):  
Transition Temperature ◽  
Structural Parameters ◽  
Structural Instability ◽  
Normal Phase ◽  
Partial Substitution ◽  
Critical Transition ◽  
X Ray Diffraction ◽  
Critical Transition Temperature ◽  
X Ray ◽  
Maximum Value

The influence of partial substitution of Nd by Gd and Ce on the Nd 2 CuO 4n-type superconductor was studied by using X-ray diffraction measurements. For x = 0.15 Ce the maximum value of critical transition temperature Tc was obtained. The influence of Gd concentration on the lattice parameters and unit-cell volume was studied in the optimal doped sample (x = 0.15 Ce ) and in the samples with 0≤x≤0.2 Ce . The relation between structural parameters and critical transition temperature was evidenced. The transition from the structural normal phase to the distortion phase was evidenced above y = 0.75 Gd in the optimal Ce -doped sample.

scholarly journals Determination of the Compositions of thin Film Compounds by using the Electron-Probe X-ray Microanalyzer. Analyses of Nitride Thin Films

Shinku ◽  
1970 ◽  
Vol 13 (12) ◽  
pp. 413-420 ◽  
Author(s):  
Akio ITOH ◽  
Shunji MISAWA ◽  
Hiroyoshi SOEJIMA
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Probe ◽  
X Ray

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

2019 ◽  
Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Design ◽  
Grazing Incidence ◽  
Crystallite Orientation ◽  
Miller Index ◽  
X Ray ◽  
X Ray Scattering ◽  
Orientation Distributions ◽  
Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

scholarly journals Optoelectronic properties of highly porous silver oxide thin film

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plasma Etching ◽  
Silver Oxide ◽  
Oxidation Time ◽  
Oxide Thin Film ◽  
X Ray ◽  
Porous Silver ◽  
Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

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