STUDY OF Cu DIFFUSION IN Cu/TaN/SiO2/Si MULTILAYER STRUCTURES

2001 ◽  
Vol 08 (05) ◽  
pp. 527-532 ◽  
Author(s):  
D. H. ZHANG ◽  
S. W. LOH ◽  
C. Y. LI ◽  
P. D. FOO ◽  
JOSEPH XIE ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Copper Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cu Films ◽  
Cu Film ◽  
Different Temperatures ◽  
Metal Organic ◽  
Barrier Metal ◽  
Organic Chemical Vapor Deposition

This paper reports the effect of a flash copper layer, sandwiched between a copper film deposited by metal-organic chemical vapor deposition (MOCVD) and a TaN barrier metal, on copper diffusion through TaN barrier to Si substrate after rapid thermal annealing at different temperatures. It is found that for the structure of CVD Cu/TaN/SiO 2/ Si , which has no flash Cu layer, Cu could diffuse through the 25-nm-thick TaN barrier layer at an annealing temperature of 600°Cfor 180 s. However, by incorporating a flash Cu layer between the CVD Cu film and the TaN barrier, Cu diffusion can be significantly reduced. In addition to Cu , the out-diffusion of Si and oxygen, and the interaction between them can also be reduced by the incorporated flash Cu layer, due likely to the change of the crystallographic orientation of the CVD Cu films.

Copper Films Prepared by Metal Organic Chemical Vapor Deposition (MOCVD) Process Using Copper (Acetylacetonate) and Water Vapor as Reactants: The Impact of Water Vapor

1992 ◽  
Vol 282 ◽  
Author(s):  
Yu-Neng Chang
Keyword(s):  
Water Vapor ◽  
Partial Pressure ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Gas Flow Rate ◽  
Cu Films ◽  
Metal Organic ◽  
Carrier Gas Flow ◽  
Organic Chemical Vapor Deposition

ABSTRACTBy using the strong reductive potential of copper acetylacetone (Cu(acac)2) when Cu(acac)2) was thermally decomposed, copper metal films were prepared by metal organic chemical vapor deposition (MOCVD) process using sublimed Cu(acac)2 vapor and water vapor as reactants, at one atmosphere pressure. According to thermodynamic calculations, Cu films could be prepared by MOCVD process with a high ratio of partial pressures for water vapor and Cu(acac)2 vapor (PH2O/Pcu(acac)2>30) In this paper, the impacts of MOCVD processing parameters such as watervapor partial pressure, total carrier gas flow rate, and precursor partial pressure on film composition and microstructure were investigated. Deposition temperature is the primary processing parameter affecting film stoichiometry. In a specific deposition temperature window, from 370°C to 400°C, polycrystalline Cu films with Cu [111] preferential orientation were deposited. ER and XRD results indicated that films deposited at temperature lower than 350°C contain copper oxide phase with poor crystal structure. By comparing the values of X-ray Auger Electron Spectroscopy (XAES) and Auger parameter (αAu) from photoelectrons of Cu films and standards from reference compounds, die principle oxidation state of copper in these films was determined as Cu(0). The deposition results indicated that a water vapor partial pressure above 10 torr is necessary to produce Cu films. As indicated by SEM, Increasing the carrier gas flow rate, above 600 sccm, can reduce the average temperature profile in the thermal boundary layer above the substrate surface, retard the gas phase reaction rate, presumably eliminate the homogeneous nucleation, and deposit smooth Cu films.

Structural and Optical Properties of α-Ga2O3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD

2013 ◽  
Vol 746 ◽  
pp. 369-373 ◽  
Author(s):  
Yu Lv ◽  
Wei Mi ◽  
Cai Na Luan ◽  
Jin Ma
Keyword(s):  
Optical Properties ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Structural And Optical Properties ◽  
Visible Wavelength Range ◽  
Average Transmittance ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Ga2O3thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga2O3films were investigated including the influence by annealing for the obtained films. The Ga2O3films on sapphire () and () substrate areα-Ga2O3. The crystallization of the films decreases after annealed at 900 °C. The average transmittance of the samples in the visible wavelength range was over 86% and the optical band gapEgwas about 4.755.15 eV. TheEgof the samples increases after annealing at 900 °C.

Effects of Surface Treatment and Annealing on Properties of InN Layers Grown Using Metal Organic Chemical Vapor Deposition

2012 ◽  
Vol 271-272 ◽  
pp. 190-196
Author(s):  
Sheng Po Chang ◽  
Kuan Jen Chen ◽  
Po Jui Kuo ◽  
Yu Zung Chiou
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Surface Treatment ◽  
Vapor Deposition ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We report the effects surface treatment and annealing had on the properties of InN layers grown using metal organic chemical vapor deposition (MOCVD). The number of defects due to N vacancies decreased significantly with increasing annealing temperature. However, when the annealing temperature reached 700°C, the crystalline grain became larger on the film surfaces. Annealing at an appropriate temperature improved the crystalline quality and the electrical properties of the InN films. However, when the annealing temperature was too high, InN oxidized and even dissociated.

Internal Stress and Grain Size Effect on the Phase Stabilization of ZrO2 Deposited by MOCVD

2011 ◽  
Vol 675-677 ◽  
pp. 1201-1204
Author(s):  
Zhe Chen ◽  
Bin Wang ◽  
Nathalie Prud’homme ◽  
Sheng Li Ma ◽  
Vincent Ji ◽  
...  
Keyword(s):  
Grain Size ◽  
Internal Stress ◽  
Tetragonal Phase ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Phase Stabilization ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Zirconia (ZrO2) films were deposited by metal-organic chemical vapor deposition (MOCVD) on {1 0 0} Si single crystal using Zr(thd)4 precursors. The thickness of obtained films is typically of 3.5 μm. The samples have been characterized by Field-Emission-Gun Scanning Electron Microscopy (FEG-SEM) for morphologic and microstructure study, and by X-ray Diffraction (XRD) for crystalline structure. The microstructure analysis showed that unexpected stable single tetragonal phase preferentially grew in low temperature area. According to the literature, the tetragonal phase stabilization is related to the crystalline size and the internal compressive stress. To analyze the effect of grain size and internal stress on the phase transformation, the thermal annealing were carried out in different temperatures and internal stress was measured by XRD method.

X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+ Ions

2009 ◽  
Vol 1202 ◽  
Author(s):  
Mohammad Ahmad Ebdah ◽  
Martin E. Kordesch ◽  
Andre Anders ◽  
Wojciech M. Jadwisienczak
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Gradual Improvement ◽  
X Ray ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Ion Implanted

AbstractIn this work, europium implanted InGaN/GaN SL with a fixed well/barrier thickness ratio grown by metal-organic chemical-vapor deposition (MOCVD) on GaN/(0001) sapphire substrate were investigated. The as-grown and Eu ion implanted InGaN/GaN SLs were annealed at different temperatures ranging from 600°C to 950°C in nitrogen ambient. The quality of the SL interfaces in undoped and implanted structures has been investigated by X-ray diffraction (XRD) at room temperature. The characteristic satellite peaks of SLs were measured for the (0002) reflection up to the second order in the symmetric Bragg geometry. The XRD simulation spectrum of the as-grown SL agrees well with the experimental results. The simulation results show x=0.06 atomic percent the InGaN well sub-layers, with thicknesses of 2.4 and 3.3 nm for single InGaN well and GaN barrier, respectively. It was observed that annealing of the undoped SL does not significantly affect the interfacial quality of the superstructure, whereas, the Eu ion implanted InGaN/GaN SL undergo partial induced degradation. Annealing the implanted SLs shows a gradual improvement of the multilayer periodicity and a reduction of the induced degradation with increasing the annealing temperature as indicated by the XRD spectra.

Epitaxial and Conductive RuO2 Thin Films Grown on MgO and LaAlO3 by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
P. Lu ◽  
S. He ◽  
F. X. Li ◽  
Q. X. Jia
Keyword(s):  
Thin Films ◽  
Orientation Relationship ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Microstructural Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractConductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition(MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2 /(100) MgO and [001] RuO2//[011]MgO. The films on LaAlO3, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.

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