ELECTROREFLECTANCE CHARACTERIZATION OF THE Ge/Si GROOVE ISLAND STRUCTURES
2003 ◽
Vol 02
(04n05)
◽
pp. 369-373
Keyword(s):
The optical properties of Ge/Si groove island structures were investigated by the electroreflectance spectroscopy at various temperatures. Optical transitions involving the groove islands near the spectral range of 2~2.5 eV were observed. When the Ge growth temperature is decreased, the three-dimensional growth of the Ge island on the wetting layer is suppressed and the Ge/Si intermixing formation of stacking grooves in the Si layers is enhanced. The corresponding spectral intensity is increased and the transition energy is reduced due to the quantum confinement effect.
2016 ◽
Vol 4
(12)
◽
pp. 1939-1943
◽
Keyword(s):
Keyword(s):
2007 ◽
Vol 131-133
◽
pp. 559-562
◽
2010 ◽
Vol 24
(25)
◽
pp. 2591-2599
◽