Effect of Pre-Annealing on Thermal and Optical Properties of ZnO and Al–ZnO Thin Films

Zinc oxide (ZnO) nanoparticles were synthesized by a simple solution route method using zinc acetate as the precursor and ethanol as the solvent. At a temperature of 60[Formula: see text]C, a clear homogenous solution is heated to 100[Formula: see text]C for ethanol evaporation. Then the obtained precursor powder is annealed at 600[Formula: see text]C for the formation of ZnO nanocrystalline structure. Doped ZnO particle is also prepared by using aluminum nitrate nonahydrate to produce aluminum (Al)-doped nanoparticles using the same solution route method followed by annealing. Thin film fabrication is done by air evaporation method using the polymer polyvinyl alcohol (PVA). To analyze the optical and thermal properties for undoped and doped ZnO nanocrystalline thin film by precursor annealing, characterizations such as UV, FTIR, AFM, TGA/DTA, XRD, EDAX and Photoluminescence (PL) were also taken. It was evident that precursor annealing had great influence on thermal and optical properties of thin films while ZnO and AZO film showed low crystallinity and intensity than in the powder form. TGA/DTA suggests pre-annealing effect improves the thermal stability, which ensures that Al ZnO nanoparticle can withstand at high temperature too which is the crucial advantage in the semiconductor devices. UV spectroscopy confirmed the presence of ZnO nanoparticles in the thin film by an absorbance peak observed at 359[Formula: see text]nm with an energy bandgap of 3.4[Formula: see text]eV. A peak obtained at 301[Formula: see text]nm with an energy bandgap of 4.12[Formula: see text]eV shows a blue shift due to the presence of Al-doped ZnO nanoparticles. Both ZnO and AZO bandgap increased due to precursor annealing. In this research, PL spectrum is also studied in order to determine the optical property of the nanoparticle embedded thin film. From PL spectrum, it is observed that the intensity of the doped ZnO is much more enhanced as the dopant concentration is increased to 1[Formula: see text]wt.% and 2[Formula: see text]wt.% of Al in ZnO.

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Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽

10.3390/cryst10040252 ◽

2020 ◽

Vol 10 (4) ◽

pp. 252 ◽

Cited By ~ 5

Author(s):

A. M. Alsaad ◽

A. A. Ahmad ◽

I. A. Qattan ◽

Qais M. Al-Bataineh ◽

Zaid Albataineh

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Optical Properties ◽

Nonlinear Optical ◽

Zno Thin Films ◽

Zno Films ◽

Optical Parameters ◽

Group Iii ◽

Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.18913 ◽

2021 ◽

Vol 21 (3) ◽

pp. 1971-1977

Author(s):

Jihye Kang ◽

Dongsu Park ◽

Donghun Lee ◽

Masao Kamiko ◽

Sung-Jin Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Multilayer Structure ◽

Laser Annealing ◽

Transparent Conducting Oxide ◽

Sol Gel ◽

Electrical And Optical Properties ◽

Vis Spectroscopy ◽

Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

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Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

Materials Testing ◽

10.1515/mt-2020-0123 ◽

2021 ◽

Vol 63 (8) ◽

pp. 778-782

Author(s):

Tülay Yıldız ◽

Nida Katı ◽

Kadriye Yalçın

Keyword(s):

Thin Film ◽

Thin Films ◽

Surface Roughness ◽

Optical Properties ◽

Spin Coating ◽

Sol Gel ◽

Zno Thin Film ◽

Spin Coating Method ◽

Coating Method ◽

Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

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Influence of the pH on the Surface and Optical Properties of the Thin Film of Polyaniline / Polyethylene Terephthalate Composite. The AFM and Spectroscopies Studies

MRS Proceedings ◽

10.1557/opl.2011.906 ◽

2011 ◽

Vol 1312 ◽

Cited By ~ 2

Author(s):

Rafaella T. Paschoalin ◽

Clarice Steffens ◽

Alexandra Manzoli ◽

Mhbuti R. Hlophe ◽

Paulo S. P. Herrmann

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Great Influence ◽

Spectroscopic Properties ◽

Printing Technique ◽

Vibrational Bands ◽

Coating Layers ◽

Ph Increase

ABSTRACTThe effect of pH was investigated on the morphological and spectroscopic properties of PANI thin films on PET. PANI/PET strips were prepared by a pattern-printing technique and coated with a thin film of polyaniline in situ emeraldine oxidation state, doped with HCl (PANI-HCl), obtained by in situ polymerization. AFM, UV-VIS-NIR and FTIR/ATR spectroscopic results showed that pH has a great influence on the polymer layer morphology of the coating layers, while the intensity of vibrational bands decreases with rising pH, increase due to changes in the H-bonded structure in the polymer chain.

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Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.511 ◽

2013 ◽

Vol 667 ◽

pp. 511-515 ◽

Cited By ~ 1

Author(s):

N.D. Md Sin ◽

Mohamad Hafiz Mamat ◽

Mohamad Rusop

Keyword(s):

Thin Film ◽

Thin Films ◽

Zinc Oxide ◽

Optical Properties ◽

Doping Concentration ◽

Near Infrared ◽

Thin Film Transistor ◽

Zno Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Doped Zno

The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.

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Experimental Investigation of Spray-Deposited Fe-Doped ZnO Nanoparticle Thin Films: Structural, Microstructural, and Optical Properties

Journal of Thermal Spray Technology ◽

10.1007/s11666-013-9973-0 ◽

2013 ◽

Vol 22 (7) ◽

pp. 1230-1241 ◽

Cited By ~ 18

Author(s):

C. S. Prajapati ◽

Ajay Kushwaha ◽

P. P. Sahay

Keyword(s):

Thin Films ◽

Experimental Investigation ◽

Optical Properties ◽

Zno Nanoparticle ◽

Doped Zno

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Optical Properties and Constants of Ga-doped ZnO Thin Films Grown on a Muscovite Mica Substrate for Optoelectronic Applications

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2016.54.2.117 ◽

2016 ◽

Vol 54 (2) ◽

pp. 117-124

Author(s):

Jae-Young Leem ◽

Younggyu Kim

Keyword(s):

Thin Films ◽

Optical Properties ◽

Zno Thin Films ◽

Mica Substrate ◽

Muscovite Mica ◽

Doped Zno ◽

Optoelectronic Applications

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Synthesis and Optical Properties of B-Mg co-Doped ZnO Nanoparticles

Coatings ◽

10.3390/coatings11080882 ◽

2021 ◽

Vol 11 (8) ◽

pp. 882

Author(s):

Yuechan Li ◽

Yongli Li ◽

An Xie

Keyword(s):

Optical Properties ◽

Zno Nanoparticles ◽

Great Influence ◽

Structure Study ◽

Band Gap Energy ◽

One Pot ◽

Gap Energy ◽

Doping Impurity ◽

Shrinkage Effect ◽

Co Doped

Doping impurity into ZnO is an effective and powerful technique to tailor structures and enhance its optical properties. In this work, Zn1−xMgxO and Zn1−x−yMgxByO nanoparticles (x = 0, 0.1, 0.2, 0.3, 0.4; y = 0, 0.02, 0.04) were synthesized via one-pot method. It shows that the Mg and B dopants has great influence on crystallinity and surface morphology of ZnO nanoparticles, without changing the wurtzite structure of ZnO. The band structure study indicates that the competition of Conductive Band (CB) shift, Burstein–Moss (B-M) shift and Shrinkage effect will cause the band gap energy change in ZnO.

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