Templating effects of tetrakis(thiadiazole)porphyrazine on the structure and optical properties of copper phthalocyanine thin films

Molecular templating is an attractive method to improve the crystallinity and control the molecular orientations of organic thin films. Here, we report on the templating effects of an organic [Formula: see text]-type semiconductor, tetrakis(thiadiazole)porphyrazine (H2TTDPz), on the structure and optical absorption of a [Formula: see text]-type semiconductor, copper phthalocyanine (CuPc). X-ray diffraction measurements for the double layer thin films, CuPc/H2TTDPz, indicate a face-on orientation of CuPc, which is replicating the structure of the H2TTDPz thin films, even though the CuPc thin films usually form edge-on-type thin films. The optical absorption measurements show new low-energy transitions in the templated CuPc films.

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Structural Investigation of Copper Phthalocyanine Thin Films Using X-Ray Diffraction, Raman Scattering and Optical Absorption Measurements

physica status solidi (b) ◽

10.1002/1521-3951(200202)229:3<1175::aid-pssb1175>3.0.co;2-k ◽

2002 ◽

Vol 229 (3) ◽

pp. 1175-1186 ◽

Cited By ~ 71

Author(s):

R. Prabakaran ◽

R. Kesavamoorthy ◽

G.L.N. Reddy ◽

F.P. Xavier

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Raman Scattering ◽

Structural Investigation ◽

Copper Phthalocyanine ◽

X Ray Diffraction ◽

X Ray ◽

Absorption Measurements

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The In-Situ Observation of Organic Thin Films During Growth Process by Using Grazing Incidence X-Ray Diffraction and Fluorescence Methods

Advances in X-Ray Analysis ◽

10.1007/978-1-4615-5377-9_71 ◽

1997 ◽

pp. 653-658

Author(s):

Kouichi Hayashi ◽

Toshihisa Horiuchi ◽

Kazumi Matsushige

Keyword(s):

Thin Films ◽

Growth Process ◽

Organic Thin Films ◽

Grazing Incidence ◽

In Situ Observation ◽

X Ray Diffraction ◽

X Ray ◽

Fluorescence Methods

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3D-structural Analysis of Epitaxially-grown Organic Thin Films by a Newly Developed Energy Dispersive X-ray Diffraction System.

Hyomen Kagaku ◽

10.1380/jsssj.19.259 ◽

1998 ◽

Vol 19 (4) ◽

pp. 259-264

Author(s):

Kenji ISHIDA ◽

Toshihisa HORIUCHI ◽

Kazumi MATSUSHIGE MATSUSHIGE

Keyword(s):

Thin Films ◽

Structural Analysis ◽

Organic Thin Films ◽

Energy Dispersive ◽

X Ray Diffraction ◽

X Ray

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Energy Dispersive Grazing Incidence X-ray Diffraction Study on Organic Thin Films EpitaxiaHy Grown on Crystalline Substrate

Advances in X-ray Analysis ◽

10.1154/s0376030800023090 ◽

1995 ◽

Vol 39 ◽

pp. 659-664 ◽

Cited By ~ 1

Author(s):

Kenji Ishida ◽

Akinori Kita ◽

Kouichi Hayashi ◽

Toshihisa Horiuchi ◽

Shoichi Kal ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Film Studies ◽

Organic Thin Films ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

Structural Evaluation ◽

Crystalline Substrate ◽

Scattering Volume

Thin film technology is rapidly evolving today, and the characterization of the thin film and its surface have become very important issue not only from scientific but also technological viewpoints. Although x-ray diffraction measurements have been used as suitable evaluation methods in crystallography studies, its application to the structural evaluation of the thin films, especially organic one having the low electron densities, is not easy due to the small amounts of scattering volume and the high obstructive scattering noise from the substrate. However, the x-ray diffraction measurements under grazing incidence will aid not only in overcoming the such problems but also in analyzing in-plane structure of the thin films. Therefore, so-called grazing incidence x-ray diffraction (GIXD) has been recognized as one of the most powerful tools for the surface and thin film studies.

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Electrodeposition and Properties of CuInS2 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.690-693.1659 ◽

2013 ◽

Vol 690-693 ◽

pp. 1659-1663

Author(s):

Hai Fang Zhou ◽

Xiao Hu Chen

Keyword(s):

Thin Films ◽

Photocurrent Density ◽

Enhancement Effect ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Ito Glass ◽

Type Semiconductor ◽

One Step ◽

P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

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Structural and Optical Properties of Thermally Evaporated BiSb2S3 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.678.123 ◽

2013 ◽

Vol 678 ◽

pp. 123-130 ◽

Cited By ~ 1

Author(s):

K. Kandaswamy ◽

Panneerselvam Chirstopher Selvin ◽

B. Nalini ◽

I. Mohamed Abdulla ◽

K.P. Abhilash

Keyword(s):

Thin Films ◽

Thermal Evaporation ◽

Orthorhombic Phase ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

Thermal Evaporation Method ◽

X Ray ◽

Vacuum Thermal Evaporation ◽

Different Thickness ◽

Absorption Measurements

Thin films of Bi1.5(Sb2S3)0.5of different thickness were deposited on glass substrate by vacuum thermal evaporation method and annealed at different temperature. The elemental compositions of the films were confirmed by energy dispersive X-ray analysis (EDAX). The prepared films were structurally and morphologically characterized by X-ray diffraction (XRD) and microscopic (SEM & AFM) techniques respectively. It has been confirmed that the films possess polycrystalline nature with orthorhombic phase and the grain size of the films vary from 27.92 to 81.37 nm. The observed bandgap energies (varying from 1.787eV to 1.963 eV) of the films and its temperature dependence were estimated from optical absorption measurements.

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Phase and Texture of Solution-Processed Copper Phthalocyanine Thin Films Investigated by Two-Dimensional Grazing Incidence X-Ray Diffraction

Crystals ◽

10.3390/cryst1030112 ◽

2011 ◽

Vol 1 (3) ◽

pp. 112-119 ◽

Cited By ~ 13

Author(s):

Lulu Deng ◽

Kewei Wang ◽

Cindy X. Zhao ◽

Han Yan ◽

James F. Britten ◽

...

Keyword(s):

Thin Films ◽

Copper Phthalocyanine ◽

Grazing Incidence ◽

Two Dimensional ◽

X Ray Diffraction ◽

Solution Processed ◽

X Ray

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Hardness and Elastic Modulus of ZnO Thin Films Fabricated by PLD Method

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.353-358.2966 ◽

2007 ◽

Vol 353-358 ◽

pp. 2966-2969

Author(s):

Han Ki Yoon ◽

Yun Sik Yu

Keyword(s):

Thin Films ◽

Elastic Modulus ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Uv Laser ◽

X Ray Diffraction ◽

X Ray ◽

Electroluminescence Device ◽

Type Semiconductor

ZnO is an n-type semiconductor having a hexagonal wurzite structure. ZnO exhibits good piezoelectric and optical properties, and might be a good candidate for an electroluminescence device like an UV laser diode. Then, these devices are very small, their films are very thin and they are prepared in the limited size and shape, so they are unsuitable for the extensive mechanical testing. In this present work, ZnO thin films are prepared on the glass, GaAs(100), Si(100) and Si(111) substrates at various temperatures by the pulsed laser deposition (PLD) method. ZnO thin films were evaluated by X-ray diffraction (XRD) and mechanical properties such as hardness and elastic modulus were measured through the nano-indenter.

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Electrodeposition of CU2SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

MRS Proceedings ◽

10.1557/proc-744-m5.34 ◽

2002 ◽

Vol 744 ◽

Cited By ~ 2

Author(s):

Raman Vaidyanathan ◽

Mkhulu K. Mathe ◽

Patrick Sprinkle ◽

Steve M Cox ◽

Uwe Happek ◽

...

Keyword(s):

Thin Films ◽

Band Gap ◽

Atomic Layer ◽

Atomic Ratio ◽

Atomic Layer Epitaxy ◽

Cyclic Voltammograms ◽

X Ray Diffraction ◽

X Ray ◽

Electrochemical Atomic Layer Epitaxy ◽

Absorption Measurements

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.We report the formation of compound Cu2Se, at room temperature by electrochemical atomic layer epitaxy (EC-ALE). Cyclic voltammograms were used to determine the deposition potentials of each element. An automated deposition program was used to form 750 cycles of Cu2Se thin films. Electron probe microanalysis was done to determine the stoichiometry of the thin films. X-ray diffraction of the 200 cycle deposit indicated the presence of polycrystalline Cu2Se. The atomic ratio of Cu/Se in the thin films was found to be 2. Band gap of the thin films were determined by reflection absorption measurements. The band gap of the 200 cycle Cu2Se films was found to be 1.6 eV. X-ray diffraction of 350 and 750 cycle Cu2Se films, indicated the deposits consisted of Cu3Se2 and Cu2Se.

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