Effect of Graphene Composite on Biological Egg Protein Resistance Switching Memory Properties

In this work, a resistive switching memory device was fabricated based on egg protein, a natural biomaterial. The effect of graphene composite on the resistive switching characteristics of the device was investigated. The experimental results show that both pure egg protein and graphene composite devices exhibit bipolar nonvolatile resistive conversion properties. Both devices have good data retention capability. Furthermore, the composite of graphene can effectively improve the device endurance and the consistency of the on-state current distribution of the device. Based on the theory of capture and de-capture of charge carrier, the mechanism of resistive switching is analyzed.

Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications

RSC Advances ◽

10.1039/d0ra06389d ◽

2020 ◽

Vol 10 (52) ◽

pp. 31342-31347

Author(s):

Sobia Ali Khan ◽

Sungjun Kim

Keyword(s):

Resistive Switching ◽

Memory Device ◽

Voltage Amplitude ◽

Sweep Voltage ◽

Switching Characteristics ◽

Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

Switching characteristics in TiO2/ZnO double layer resistive switching memory device

Materials Research Express ◽

10.1088/2053-1591/aa731e ◽

2017 ◽

Vol 4 (6) ◽

pp. 065901 ◽

Cited By ~ 3

Author(s):

Praveen K Jain ◽

Mohammad Salim ◽

Umesh Chand ◽

C Periasamy

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Memory Device ◽

Switching Characteristics ◽

Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.159.333 ◽

2010 ◽

Vol 159 ◽

pp. 333-337 ◽

Cited By ~ 4

Author(s):

Amit Prakash ◽

Siddheswar Maikap ◽

H.Y. Lee ◽

G. Chen ◽

F. Chen ◽

...

Keyword(s):

Resistive Switching ◽

Conduction Mechanism ◽

Memory Device ◽

Data Retention ◽

Bipolar Resistive Switching ◽

Good Memory ◽

Current Conduction ◽

Memory Characteristics ◽

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

Journal of Materials Chemistry C ◽

10.1039/c7tc03481d ◽

2017 ◽

Vol 5 (37) ◽

pp. 9799-9805 ◽

Cited By ~ 16

Author(s):

Guilin Chen ◽

Peng Zhang ◽

Lulu Pan ◽

Lin Qi ◽

Fucheng Yu ◽

...

Keyword(s):

Memory Effect ◽

Resistive Switching ◽

Memory Device ◽

Memory Devices ◽

Resistive Memory ◽

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aabb77 ◽

2018 ◽

Vol 51 (22) ◽

pp. 225102 ◽

Cited By ~ 1

Author(s):

N J Lee ◽

T S Kang ◽

Q Hu ◽

T S Lee ◽

T-S Yoon ◽

...

Keyword(s):

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Memory Device ◽

Resistive Random Access Memory ◽

Access Memory ◽

Switching Characteristics

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Micromachines ◽

10.3390/mi11100905 ◽

2020 ◽

Vol 11 (10) ◽

pp. 905

Author(s):

Junhyeok Choi ◽

Sungjun Kim

Keyword(s):

Data Storage ◽

Resistive Switching ◽

Memory Device ◽

Comparison Study ◽

Tio2 Layer ◽

Bipolar Resistive Switching ◽

Current Voltage ◽

Improved Stability ◽

Switching Characteristics

In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.