Determination of Hole and Electron Traps from Capacitance Measurements

1973 ◽  
Vol 12 (7) ◽  
pp. 1011-1019 ◽  
Author(s):  
Toshiaki Ikoma ◽  
Bert Jeppsson
Keyword(s):  
Electron Traps ◽  
Capacitance Measurements

Cathodoluminescence of SiO2/Si System

2009 ◽  
Vol 156-158 ◽  
pp. 487-492 ◽  
Author(s):  
M.V. Zamoryanskaya
Keyword(s):  
Activation Energy ◽  
Electron Beam ◽  
Rise Time ◽  
Silicon Oxide ◽  
Beam Current ◽  
Electron Beam Current ◽  
Electron Traps ◽  
Definition Of ◽  
Luminescent Centers

In this paper the new method for determination of luminescent centers concentration are discussed. While the possibility of electron traps determination and definition of its activation energy are suggested. The cathodoluminescent (CL) method was used. The determination of luminescent centers concentration in silicon oxide is based on the measurements of dependences of CL intensity on electron beam current. The presence and energy of activation of electron traps were studied by measurement of rise time and decay of luminescent band during the stationary irradiation of silica by electron beam.

Determination of capture cross sections for as-grown electron traps in HfO2∕HfSiO stacks

2006 ◽  
Vol 100 (9) ◽  
pp. 093716 ◽  
Author(s):  
C. Z. Zhao ◽  
J. F. Zhang ◽  
M. B. Zahid ◽  
B. Govoreanu ◽  
G. Groeseneken ◽  
...  
Keyword(s):  
Cross Sections ◽  
Capture Cross ◽  
Electron Traps ◽  
Capture Cross Sections

Determination of the Density and Energetic Distribution of Electron Traps in Dye-Sensitized Nanocrystalline Solar Cells

2005 ◽  
Vol 109 (32) ◽  
pp. 15429-15435 ◽  
Author(s):  
M. Bailes ◽  
P. J. Cameron ◽  
K. Lobato ◽  
L. M. Peter
Keyword(s):  
Solar Cells ◽  
Electron Traps ◽  
Dye Sensitized

Division by current: a new approach to FET capacitance modeling

2011 ◽  
Vol 3 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Stephen Maas
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Simulation ◽  
New Approach ◽  
Charge Conservation ◽  
Capacitance Measurements ◽  
Current Formulation ◽  
Effect Transistor

This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

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