Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric

2004 ◽  
Vol 43 (2) ◽  
pp. 427-431 ◽  
Author(s):  
Sungjoo Lee ◽  
Dim-Lee Kwong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
High Quality ◽  
Reliability Characteristics

Ultrathin HfO2 gate dielectric grown by plasma-enhanced chemical vapor deposition using Hf[OC(CH3)3]4 as a precursor in the absence of O2

2003 ◽  
Vol 18 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Kyu-Jeong Choi ◽  
Woong-Chul Shin ◽  
Soon-Gil Yoon
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Annealing Temperature ◽  
Gate Dielectric ◽  
Important Determinant ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Current Densities

Hafnium oxide thin films for use in a gate dielectric were deposited at 300 °C on p-type Si(100) substrates using a Hf[OC(CH3)3]4 precursor in the absence of oxygen by plasma-enhanced chemical vapor deposition. A comparison of films deposited in the absence and presence of oxygen indicated that oxygen was an important determinant in the electrical properties of HfO2 films, which were subsequently annealed in N2 and O2 ambients. The capacitance equivalent oxide thickness of the as-deposited Pt/HfO2/Si capacitor was approximately 17 Å and abruptly increased at an annealing temperature of 800 °C in both N2 and O2 ambients. The hysteresis of the as-deposited gate dielectric was quite small, about 40 mV, and that of the gate dielectric annealed at 800 °C in an O2 ambient was reduced to a negligible level, about 20 mV. The interface trap density of the Pt/HfO2/Si capacitors was approximately 1012 eV−1 cm−2 near the silicon midgap. The leakage current densities of the as-deposited Pt/HfO2/Si capacitor and those annealed at 800 °C in N2 and O2 were approximately 8 × 10−4, 8 × 10−5, and 3 × 10−7 A/cm2 at –1 V, respectively.

Electrical properties of hafnium oxide gate dielectric deposited by plasma enhanced chemical vapor deposition

2001 ◽  
Vol 38 (1-4) ◽  
pp. 191-199 ◽  
Author(s):  
Kyu-Jeong Choi ◽  
Woong-Chul Shin ◽  
Jong-Bong Park ◽  
Soon-Gil Yoon
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Chemical Vapor

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Low Temperature Critical Growth of High Quality Nitrogen Doped Graphene on Dielectrics by Plasma-Enhanced Chemical Vapor Deposition

ACS Nano ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 164-171 ◽  
Author(s):  
Dacheng Wei ◽  
Lan Peng ◽  
Menglin Li ◽  
Hongying Mao ◽  
Tianchao Niu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Critical Growth ◽  
High Quality ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene
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