Electrografting, A Unique Wet Technology for Seed and Direct Plating in Copper Metallization

2019 ◽  
Vol 1 (11) ◽  
pp. 155-162
Author(s):  
Jose Gonzalez ◽  
Frédéric Raynal ◽  
Hervé Monchoix ◽  
Abdeslem Ben Hamida ◽  
Jerome Daviot ◽  
...  
Keyword(s):  
Copper Metallization ◽  
Direct Plating

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

Copper metallization of electrodes for silicon heterojunction solar cells: Process, reliability and challenges

2021 ◽  
Vol 224 ◽  
pp. 110993
Author(s):  
Jian Yu ◽  
Junjun Li ◽  
Yilin Zhao ◽  
Andreas Lambertz ◽  
Tao Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Copper Metallization ◽  
Heterojunction Solar Cells ◽  
Process Reliability ◽  
Silicon Heterojunction Solar Cells

scholarly journals Comparison of Fecal Coliform Agar and Violet Red Bile Lactose Agar for Fecal Coliform Enumeration in Foods

2002 ◽  
Vol 68 (4) ◽  
pp. 1631-1638 ◽  
Author(s):  
A. Leclercq ◽  
C. Wanegue ◽  
P. Baylac
Keyword(s):  
Escherichia Coli ◽  
Fecal Coliform ◽  
Food Samples ◽  
Fecal Coliforms ◽  
Predictive Values ◽  
Direct Plating ◽  
Hafnia Alvei ◽  
E Coli ◽  
Plating Method ◽  
Mashed Potatoes

ABSTRACT A 24-h direct plating method for fecal coliform enumeration with a resuscitation step (preincubation for 2 h at 37 ± 1°C and transfer to 44 ± 1°C for 22 h) using fecal coliform agar (FCA) was compared with the 24-h standardized violet red bile lactose agar (VRBL) method. FCA and VRBL have equivalent specificities and sensitivities, except for lactose-positive non-fecal coliforms such as Hafnia alvei, which could form typical colonies on FCA and VRBL. Recovery of cold-stressed Escherichia coli in mashed potatoes on FCA was about 1 log unit lower than that with VRBL. When the FCA method was compared with standard VRBL for enumeration of fecal coliforms, based on counting carried out on 170 different food samples, results were not significantly different (P > 0.05). Based on 203 typical identified colonies selected as found on VRBL and FCA, the latter medium appears to allow the enumeration of more true fecal coliforms and has higher performance in certain ways (specificity, sensitivity, and negative and positive predictive values) than VRBL. Most colonies clearly identified on both media were E. coli and H. alvei, a non-fecal coliform. Therefore, the replacement of fecal coliform enumeration by E. coli enumeration to estimate food sanitary quality should be recommended.

Assessment of different selective agar media for enumeration and isolation ofListeriafrom dairy products

1988 ◽  
Vol 55 (4) ◽  
pp. 579-583 ◽  
Author(s):  
Lucas Dominguez ◽  
José Francisco Fernández ◽  
Victor Briones ◽  
José Luis Blanco ◽  
Guillermo Suárez
Keyword(s):  
Dairy Products ◽  
Agar Medium ◽  
Raw Milk ◽  
Superior Performance ◽  
Direct Plating ◽  
Selective Agar ◽  
Natural Microflora ◽  
Agar Media ◽  
The Difference ◽  
Better Than

SummaryDifferent selective agar media were compared for the recovery and isolation of five species ofListeriafrom raw milk and cheese. The selective media examined were Beerens medium, MacBride medium and that described by Dominguezet al.(1984) with 6 mg/1 acriflavine, listeria selective agar medium (LSAM), and LSAM with 12 mg/1 acriflavine (LSAM × 2A); a non-selective yeast glucose Lemco agar was included for comparison. When the difference between listeria and the natural microflora of raw milk and cheese was 102cfu/ml, listeria could be isolated by direct plating on all media tested. When it was lower than 103–104cfu/ml, listeria were isolated by direct plating only on LSAM and LSAM × 2A. When the difference was greater than 104cfu/ml, a previous enrichment was necessary to isolate them. LSAM and LSAM × 2A media performed better than the other media tested for isolating listeria by direct plating and improved their isolation from dairy products. This superior performance was evaluated by the ability of these media to support colony formation of different species ofListeriatested, the easy recognition of these colonies from those formed by other microorganisms and by their capacity to inhibit the natural microflora of these foods.

Refractory metal carbide based diffusion barriers for copper metallization

2001 ◽  
Author(s):  
S.C. Sun ◽  
H.Y. Tsai ◽  
S.J. Wang
Keyword(s):  
Refractory Metal ◽  
Diffusion Barriers ◽  
Copper Metallization ◽  
Metal Carbide

scholarly journals PseudomonasDiversity in Crude-Oil-Contaminated Intertidal Sand Samples Obtained after thePrestigeOil Spill

2010 ◽  
Vol 77 (3) ◽  
pp. 1076-1085 ◽  
Author(s):  
Magdalena Mulet ◽  
Zoyla David ◽  
Balbina Nogales ◽  
Rafael Bosch ◽  
Jorge Lalucat ◽  
...  
Keyword(s):  
Carbon Sources ◽  
Species Level ◽  
Gene Library ◽  
Direct Plating ◽  
Selective Media ◽  
Dna Library ◽  
Culture Independent ◽  
Northwestern Spain ◽  
Pcr Method ◽  
Culture Dependent

ABSTRACTThe Galicia seashore, in northwestern Spain, was one of the shorelines affected by thePrestigeoil spill in November 2002. The diversity of autochthonousPseudomonaspopulations present at two beaches (Carnota municipality) was analyzed using culture-independent and culture-dependent methods. The first analysis involved the screening of anrpoDgene library. The second involved the isolation of 94Pseudomonasstrains that were able to grow on selective media by direct plating or after serial enrichments on several carbon sources: biphenyl, gentisate, hexadecane, methylnaphthalene, naphthalene, phenanthrene, salicylate, xylene, and succinate. Eight denitrifyingPseudomonasstrains were also isolated by their ability to grow anaerobically with nitrate. The calculated coverage index forPseudomonasspecies was 89% when clones and isolates were considered together, and there were 29 phylospecies detected. The most abundant were members of the speciesP. stutzeri,P.putida,P. anguilliseptica, andP. oleovorans. Thirty-one isolates could not be identified at the species level and were considered representatives of 16 putative novelPseudomonasspecies. One isolate was considered representative of a novelP. stutzerigenomovar. Concordant results were obtained when the diversities of the cloned DNA library and the cultured strains were compared. The clone library obtained by therpoDPCR method was a useful tool for evaluatingPseudomonascommunities and also for microdiversity studies ofPseudomonaspopulations.

Low-Temperature LPCVD MEMS Technologies

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Rf Mems ◽  
Sige Layer ◽  
Copper Metallization ◽  
Si Films ◽  
P Type ◽  
Mems Process ◽  
Post Deposition

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.

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