Polarization-Induced Interfacial Reactions Between Nickel and Selenium in Ni/Zirconia SOFC Anodes and Comparison with Sulfur Poisoning

2011 ◽  
Vol 158 (1) ◽  
pp. B36 ◽  
Author(s):  
Olga A. Marina ◽  
Larry R. Pederson ◽  
Christopher A. Coyle ◽  
Edwin C. Thomsen ◽  
Danny J. Edwards
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.


Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.


2013 ◽  
Vol 51 (5) ◽  
pp. 385-391 ◽  
Author(s):  
Gue-Serb Cho ◽  
Jung-Kyu Lim ◽  
Sonn-Yool Choi ◽  
Kyong-Hwan Choe ◽  
Sang-Sub Kim

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1715
Author(s):  
Lubov Skutina ◽  
Elena Filonova ◽  
Dmitry Medvedev ◽  
Antoine Maignan

The chemical design of new functional materials for solid oxide fuel cells (SOFCs) is of great interest as a means for overcoming the disadvantages of traditional materials. Redox stability, carbon deposition and sulfur poisoning of the anodes are positioned as the main processes that result in the degradation of SOFC performance. In this regard, double perovskite molybdates are possible alternatives to conventional Ni-based cermets. The present review provides the fundamental properties of four members: Sr2NiMoO6-δ, Sr2MgMoO6-δ, Sr2FeMoO6-δ and Sr2Fe1.5Mo0.5O6-δ. These properties vary greatly depending on the type and concentration of the 3d-element occupying the B-position of A2BB’O6. The main emphasis is devoted to: (i) the synthesis features of undoped double molybdates, (ii) their electrical conductivity and thermal behaviors in both oxidizing and reducing atmospheres, as well as (iii) their chemical compatibility with respect to other functional SOFC materials and components of gas atmospheres. The information provided can serve as the basis for the design of efficient fuel electrodes prepared from complex oxides with layered structures.


2015 ◽  
Vol 46 (6) ◽  
pp. 2372-2375 ◽  
Author(s):  
Shan Ye ◽  
Jen-Dong Hwang ◽  
Chih-Ming Chen
Keyword(s):  

1997 ◽  
Vol 175 (3) ◽  
pp. 219-227 ◽  
Author(s):  
M. Rahmoune ◽  
J.P. Eymery ◽  
M.F. Denanot

2006 ◽  
Vol 55 (10) ◽  
pp. 863-866 ◽  
Author(s):  
B. Viswanath ◽  
N. Ravishankar

Sign in / Sign up

Export Citation Format

Share Document