Influence of Vacuum-Annealing Temperature on the Properties of Direct Current (DC) Magnetron Sputtered ZAO Thin Films

2019 ◽  
Vol 34 (1) ◽  
pp. 563-566
Author(s):  
Jundai Shi ◽  
Huidong Yang ◽  
Bo Huang ◽  
Baoyu Xu ◽  
Song Yu
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Annealing Temperature ◽  
Vacuum Annealing

Effect of vacuum annealing on the properties of one step thermally evaporated Sb2S3 thin films for photovoltaic applications

2021 ◽  
Author(s):  
Emna Gnenna ◽  
Naoufel Khemiri ◽  
Minghua Kong ◽  
Maria Isabel Alonso ◽  
Mounir Kanzari
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Optical Parameters ◽  
X Ray ◽  
Vis Spectroscopy ◽  
One Step

Sb2S3 powder was successfully synthesized by solid state reaction technique using high-purity elemental antimony and sulfur. Sb2S3 thin films were deposited on unheated glass substrates by one step thermal evaporation and annealed under vacuum atmosphere for 2 hours at different temperatures 150, 200 and 250 °C. Different characterization techniques were used to better understand the behavior of the Sb2S3 material. X-ray diffraction (XRD) and Raman spectroscopy confirmed the formation of pure Sb2S3 powder with lattice parameters a = 11.07 Å, b = 11.08 Å and c = 3.81 Å. The effect of vacuum annealing temperature on the properties of the films was studied. XRD analysis revealed that as-deposited and annealed films at 150ºC were amorphous in nature whereas those annealed at T ≥ 200°C were polycrystalline with a preferred orientation along (201) plane. The crystallite size of the polycrystalline films showed a decrease from 75.8 to 62.9 nm with the increase of the annealing temperature from 200 to 250 °C. The Raman analysis showed several peaks corresponding to the stibnite Sb2S3 phase. The surface morphology of the films was examined by atomic force microscopy (AFM). The surface roughness decreases slightly as the transformation from the amorphous to the crystalline phase occurs. The chemical compositions of Sb2S3 films were analyzed by energy dispersive X-ray spectroscopy (EDS), revealing that all films were Sb-rich. The optical parameters were estimated from the transmittance and reflectance spectra recorded by UV-Vis spectroscopy. A reduction in the direct band gap energy from 2.12 to 1.70 eV with the increase of annealing temperature was also found.

Effect of Manganese on Titanium Thin Films Adhesion Deposited on Steel Substrates

2012 ◽  
Vol 326-328 ◽  
pp. 583-586
Author(s):  
R. Gheriani ◽  
Raouf Mechiakh
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Pure Titanium ◽  
Nucleation And Growth ◽  
Thin Solid Films ◽  
X Ray ◽  
Solid Films ◽  
Titanium Thin Films ◽  
Steel Substrates

The mainly property of thin solid films technologies is their adhesion to the substrates. Because of its good wear resistance and its low coefficient of friction against steel, TiC is an attractive coating material for wear applications such as bearing components. The adhesion of TiC coatings, however suffers from insufficient reproducibility, which is probably due to uncontrolled process parameters. In our work pure titanium thin films of approximately 0.6 µm in thickness were prepared on 100C6 stainless steel substrates by cathodic sputtering. The samples were subjected to secondary vacuum annealing at a temperature between 400 and 1000°C for 30 min. The reaction between substrates and thin films was characterized using an x-ray diffractometer (XRD). Surface morphology and elements diffusion evaluations were carried out by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS). The interaction substrates-thin films is accompanied by nucleation and growth of titanium carbide as a function of annealing temperature. By the SEM and EDS results, it appears clearly that the diffusion of manganese to the external layers leads to the destruction of adhesion especially at high temperatures.

Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films

2013 ◽  
Vol 734-737 ◽  
pp. 2559-2562
Author(s):  
Ying Zhen Li ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Peng Juan Liu ◽  
Qing Yun Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Zinc Antimonide ◽  
Β Phase ◽  
Bk7 Glass ◽  
Diffraction Peaks

Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK-1to 132.5 μVK-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×103 to 6.86×103 Sm-1 and the Power Factor is enhanced greatly from 0.03×10-4 to 0.99×10-4 Wm-1K-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn4Sb3 and high crystalline thin films are achieved after annealing.

scholarly journals Effect of Vacuum Annealing on the Optoelectric and Morphological Properties of F16CuPc Thin Films

2012 ◽  
Vol 9 (1) ◽  
pp. 294-300 ◽  
Author(s):  
Raji Koshy ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Band Gap Energy ◽  
Dielectric Constants ◽  
Morphological Properties ◽  
Optical Data ◽  
Organic Transistors ◽  
Reflectivity Spectra ◽  
Electrical Study

The effect of vacuum annealing temperature on optical and electrical properties of vacuum evaporated F16CuPc thin films have been studied spectrophotometer and Kiethely electrometer respectively. The band gap energy both fundamental and excitonic remains unchanged when the annealing temperature increased. The optical constants of thin films are obtained by means of thin film spectrophotometry. From the electrical study, the activation energies of the films, in the intrinsic region and impurity region have been determined from the Arrhenious plots of lnσversus1000/T. Optical data have been obtained from both absorption and reflectivity spectra over the wavelength range 200-800 nm. The absorption coefficient α and extinction coefficient k are estimated from the spectrum. The mechanism of optical absorption follows the rule of direct transition. Using α and k, the refractive index and the dielectric constants are determined. The SEM investigations are F16CuPc thin films are expected to find application in the fabrication of optoelectronic devices such as organic transistors and LED devices.

scholarly journals Structural and Morphological Changes in Ag:TiN Nanocomposite Films Promoted by In-Vacuum Annealing

2013 ◽  
Vol 25 ◽  
pp. 67-76 ◽  
Author(s):  
D. Machado ◽  
P. Pedrosa ◽  
C. Fonseca ◽  
N. Martin ◽  
F. Vaz
Keyword(s):  
Thin Films ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Morphological Changes ◽  
Structural Features ◽  
Nanocomposite Films ◽  
Uniform Dispersion ◽  
Ag Clusters ◽  
Basic Characteristics

Thin films composed of titanium nitride doped with silver were deposited by DC reactive sputtering, with Ag contents varying between 0 and 50 at.%. The as-deposited samples were subjected to vacuum annealing treatments, with a range of temperatures varying from 200 to 500 °C, in order to study the morphological and structural changes that may occur. The as-deposited samples showed three main zones of basic characteristics, which differ both in terms of morphology and structural features. By increasing the annealing temperature, the thermodynamic stability is accelerated, giving rise to (i) a uniform dispersion of silver particles at 200 °C; (ii) the start of segregation at 300 °C; (iii) at 400 °C the coalescence of the segregated Ag particles takes place and finally (iv) at 500 °C the formation of large Ag clusters is evident, particularly within the zone that comprises the samples with higher Ag content. In addition to corroborate the presence of free Ag in Ag:TiN thin films, the increasing annealing temperature promotes the improvement of the coatings crystallinity, as well as Ag grain growth.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

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