scholarly journals Design and Implementation of a Low Power Ternary Full Adder

VLSI Design ◽  
1996 ◽  
Vol 4 (1) ◽  
pp. 75-81 ◽  
Author(s):  
A. Srivastava ◽  
K. Venkatapathy

In this work, the design and implementation of a low power ternary full adder are presented in CMOS technology. In a ternary full adder design, the basic building blocks, the positive ternary inverter (PTI) and negative ternary inverter (NTI) are developed using a CMOS inverter and pass transistors. In designs of PTI and NTI, W/L ratios of transistors have been varied for their optimum performance. The ternary full adder and its building blocks have been simulated with SPICE 2G.6 using the MOSIS model parameters. The rise and fall times of PTI show an improvement by a factor of 14 and 4, respectively, and that of the NTI by a factor of nearly 4 and 17, respectively over that of earlier designs implemented in depletion-enhancement CMOS (DECMOS) technology. The noise margins improve by a factor of nearly 2 in PTI and NTI, respectively.The ternary full adder has been fabricated in MOSIS two micron n-well CMOS technology. The full adder and its building blocks, NTI and PTI have been tested experimentally for static and dynamic performance, compared with the SPICE simulated behavior, and close agreement is observed.The ternary-valued logic circuits designed in the present work which do not use depletion mode MOSFETS perform better than that implemented earlier in DECMOS technology. The present design is fully compatible with the current CMOS technology, uses fewer components and dissipates power in the microwatt range.

2020 ◽  
Vol 10 (3) ◽  
pp. 286-291
Author(s):  
Inamul Hussain ◽  
Saurabh Chaudhury

Background: The Adder is one of the most prominent building blocks in VLSI circuits and systems. Performance of such systems depends mostly on the performance of the adder cell. The scaling down of devices has been the driving force in technological advances. However, in CMOS technology performance of adder cell decreases as technology node scaled down to deep micron regime. Objective: With the growth of research, new device model has been proposed based on carbon nano tube field effect transistor (CNFET). Therefore, there is a need of full adder cell, which performs sufficiently well in CNFET as well as different CMOS technology nodes. Method: A new low power full adder cell has been proposed with a hybrid XOR/XNOR module by using CNFET, which is also compatible for the CMOS technology nodes. The performance of the adder cell is validated with HSPICE simulation in terms of power, delay and power delay product. It is observed that the proposed adder cell performs better than the CMOS, CPL, TGA, 10 T, 14 T, 24 T, HSPC and Hybrid_FA adder cells. The CNFET full adder is designed in 32 nm CNFET model and to appraise its compatibility with Bulk-Si CMOS technology, 90 nm and 32 nm CMOS technology node is used. Conclusion: The proposed adder is very much suitable for both CMOS and CNFET technology based circuits and systems. To validate the result, simulation has been carried out with Synopsis tool. This full adder will definitely dominate other full adder cells at various technology nodes for VLSI applications.


2018 ◽  
Vol 7 (2.7) ◽  
pp. 733
Author(s):  
C Priyanka ◽  
N Manoj Kumar ◽  
L Sai Priya ◽  
B Vaishnavi ◽  
M Rama Krishna

Convolution is having extensive area of application in Digital Signal Processing. Convolution supports to evaluate the output of a system with arbitrary input, with information of impulse response of the system.  Linear systems features are totally stated by the systems impulse response, as ruled by the mathematics of convolution. Primary necessity of any application to work fast is that rise in the speed of their basic building block. Multiplier, adder is said to be the important building blocks in the process of convolution. As these blocks consumes plentiful time to obtain the response of the system.  Several methods are designed to progress the speed of the Multiplier and adder, among all GDI (Gate Diffusion Input) is under emphasis because of faster working and low power consumption. In this paper GDI based convolution is implemented using Vedic multiplier and adder in T-SPICE Software which increases the speed and consumes less power compared to CMOS technology. 


Author(s):  
Dan Wang ◽  
Maofeng Yang ◽  
Wu Cheng ◽  
Xuguang Guan ◽  
Zhangming Zhu ◽  
...  
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2012 ◽  
Vol 21 (04) ◽  
pp. 1250028 ◽  
Author(s):  
B. HODA SEYEDHOSSEINZADEH ◽  
MOHAMMAD YAVARI

This paper describes the design and implementation of a reconfigurable low-power sigma-delta modulator (SDM) for multi-standard wireless communications in a 90 nm CMOS technology. Both architectural and circuital reconfigurations are used to adapt the performance of the modulator to multi-standard applications. The feasibility of the presented solution is demonstrated using system-level simulations as well as transistor-level simulations of the modulator. HSPICE simulation results show that the proposed modulator achieves 76.8/78.9/80.8/85/89.5 dB peak signal-to-noise plus distortion ratio (SNDR) within the standards WiFi, WiMAX, WCDMA, Bluetooth and GSM with the bandwidth of 12.5 MHz, 10 MHz, 1.92 MHz, 0.5 MHz, and 250 kHz, respectively, under the power consumption of 37/37/12/5/5 mW using a single 1 V power supply.


VLSI Design ◽  
2007 ◽  
Vol 2007 ◽  
pp. 1-13 ◽  
Author(s):  
Jianhong Xiao ◽  
Guang Zhang ◽  
Tianwei Li ◽  
Jose Silva-Martinez

A low-cost low-power DTV tuner for current digital television application is described. In order to increase integration level and reduce power consumption for off-air DTV tuner application, an SAW-filterless tuner front-end architecture is adopted. As a part of the concept, key building blocks for this architecture are implemented on a main stream 0.35 μm CMOS technology. Experimental measurements for the prototype chip validate the system architecture; the prototype consumes 300 mw and achieves 45 dB of image rejection ratio within the entire 750 MHz frequency band.


In an electronic processing system, addition of binary numbers is a fundamental operation. A one bit low power hybrid FA(full adder) is shown in showing performance improvisation by analysis and comparing with other conventional adders. 1 bit low power hybrid full adder is considered as a good way for enhancing the speed of the circuit in comparison with other conventional circuits of full adders. In that analysis paper, one bit low power hybrid FA(full adder) is implemented by EDA tool and the simulation is analysis by using generic 90nm CMOS technology at 5 volts and comparison is done at various voltages with other conventional full adders. For comparing 1 bit low power hybrid full adder with other conventional adders at various parameters such as static and dynamic power usage, delay & pdp (power delay product) are taken into consideration to show that 1 bit low power hybrid full adder is most suitable for various low power applications.


Electronics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 765 ◽  
Author(s):  
Leila Safari ◽  
Gianluca Barile ◽  
Giuseppe Ferri ◽  
Vincenzo Stornelli

In this paper, a new low-voltage low-power dual-mode universal filter is presented. The proposed circuit is implemented using inverting current buffer (I-CB) and second-generation voltage conveyors (VCIIs) as active building blocks and five resistors and three capacitors as passive elements. The circuit is in single-input multiple-output (SIMO) structure and can produce second-order high-pass (HP), band-pass (BP), low-pass (LP), all-pass (AP), and band-stop (BS) transfer functions. The outputs are available as voltage signals at low impedance Z ports of the VCII. The HP, BP, AP, and BS outputs are also produced in the form of current signals at high impedance X ports of the VCIIs. In addition, the AP and BS outputs are also available in inverting type. The proposed circuit enjoys a dual-mode operation and, based on the application, the input signal can be either current or voltage. It is worth mentioning that the proposed filter does not require any component matching constraint and all sensitivities are low, moreover it can be easily cascadable. The simulation results using 0.18 μm CMOS technology parameters at a supply voltage of ±0.9 V are provided to support the presented theory.


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