Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films
2010 ◽
Vol 2010
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pp. 1-4
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Keyword(s):
A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ−1was observed, with a decline time of ∼1.5 ns and a full width at half-maximum (FWHM) of ∼4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ−1 mm−1. This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection
Keyword(s):
2015 ◽
Vol 773-774
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pp. 739-743
Keyword(s):
2018 ◽
Vol 6
(26)
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pp. 12682-12692
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Keyword(s):