scholarly journals Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
N. M. Khusayfan ◽  
M. M. El-Nahass
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Air Atmosphere ◽  
Light Region ◽  
Ito Thin Films ◽  
Predominant Orientation ◽  
Deposited Films

ITO thin films were prepared by electron beam evaporation of ceramic ITO target. The films were subsequently annealed in air atmosphere at the temperatures 300°C and 600°C in order to improve their optical and electrical properties. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The films exhibited cubic structure with predominant orientation of growth along (222) direction, and the crystallite size increases by rising annealing temperature. Transparency of the films, over the visible light region, is increased by annealing temperature. The resulting increase in the carrier concentration and in the carrier mobility decreases the resistivity of the films due to annealing. The absorption coefficient of the films is calculated and analyzed. The direct allowed optical band gap for as-deposited films is determined as 3.81 eV; this value is increased to 3.88 and 4.0 eV as a result of annealing at 300°C and 600°C, respectively. The electrical sheet resistance is significantly decreased by increasing annealing temperature, whereas figure of merit is increased.

Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films

2013 ◽  
Vol 678 ◽  
pp. 140-143
Author(s):  
Rangasamy Balasundraprabhu ◽  
N. Muthukumarasamy ◽  
E.V. Monakhov ◽  
B.G. Svensson
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Fused Silica ◽  
Morphological Studies ◽  
Atomic Force ◽  
Ito Thin Films ◽  
Deposited Films ◽  
Ito Films

Indium tin oxide (ITO) thin films exhibiting good transmittance and conductivity suitable for solar cell applications have been prepared on Si(100) and fused silica substrates by optimizing the dc sputtering parameters such as power density and Ar partial pressure. Structural analysis of the as-deposited and annealed ITO films indicated that the as-deposited films are predominantly amorphous, whereas the films annealed at 200–400 °C are found to be of polycrystalline nature exhibiting dominant peaks corresponding to the (222) and (400) planes. The optical transmittance and band gap values of the films are observed to exhibit a change on annealing. From the ellipsometry studies on ITO/Si annealed at 300°C, it is found that graded layer consist of the mixing of two ITO materials with slightly different optical constants and the grading is almost linear. The resistivity of the ITO films is found to decrease with annealing temperature, correlating with the improvement in the crystal quality, and values in the range of 2-3 x10-4 Ω-cm are observed for the films annealed at 300°C. Surface topography study of the films has been performed using atomic force microscope(AFM) and the results are discussed.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

scholarly journals STUDY ON ITO THIN FILMS PREPARED BY MULTI-ANNEALING TECHNIQUE

2018 ◽  
Vol 54 (1A) ◽  
pp. 136
Author(s):  
Nguyen Quang Hoa
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Solution Process ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Ito Thin Films ◽  
Annealing Method ◽  
Ito Films

Indium tin oxide (ITO) thin films have been successfully prepared by a solution process followed by a multi-annealing method. In this study, we focus on the use of multi-annealing method, for which each layer was annealed at a suitable temperature, instead of a conventional annealing way, by means of a rapid thermal annealing system, in order to improve the film quality. The crystalline structure and surface morphology of the ITO thin films were investigated by using X-ray diffraction (XRD) spectrometer, atomic force microscope (AFM) and scanning electron microscope (SEM). It has been obtained that all of ITO films exhibit a single phase with (222)- and (440)-preferred orientations. The AFM and SEM observations show that the particle size of ITO films was about 10 nm and the ITO film thickness was 180 nm, respectively. In sequence, the electrical properties of ITO thin films were evaluated by using four-point probe and Hall effect measurement methods, and the optical properties were investigated by UV/VIS spectrometer. The results show that the best ITO films have electrical resistivity of 2.6 × 10-3 Ω.cm and transparency higher than 90 %, which strongly supports to the application of electrode in solar cell, LED or transistor devices from viewpoints of low-cost production and low-energy consumption.

Influence of an Annealing Temperature in a Vacuum Atmosphere on the Physical Properties of Indium Tin Oxide Nanorod Films

2020 ◽  
Vol 20 (8) ◽  
pp. 5006-5013
Author(s):  
Peerasil Charoenyuenyao ◽  
Nathaporn Promros ◽  
Rawiwan Chaleawpong ◽  
Pitoon Noymaliwan ◽  
Nattakorn Borwornpornmetee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Glancing Angle Deposition ◽  
Root Mean Square Roughness ◽  
X Ray Diffraction ◽  
Glancing Angle ◽  
Vacuum Atmosphere ◽  
Angle Deposition

In the present study, indium tin oxide (ITO) nanorod films were produced by usage of ion-assisted electron-beam evaporation with a glancing angle deposition technique. The as-produced ITO nanorod films were annealed in the temperature range of 100–500 °C for two hours in a vacuum atmosphere. The as-produced ITO nanorod films exhibited (222) and (611) preferred orientations from the X-ray diffraction pattern. After vacuum annealing at 500 °C, the ITO nanorod films demonstrated many preferred orientations and the improvement of film crystallinity. The sheet resistance of the as-produced ITO nanorod films was 11.92 Ω/ and was found to be 13.63 Ω/ by annealing at 500 °C. The as-produced and annealed ITO nanorod films had a rod diameter of around 80 nm and transmittance in a visible zone of around 90%. The root mean square roughness of the as-produced ITO nanorod film’s surface was 5.49 nm, which increased to 13.77 nm at an annealing temperature of 500 °C. The contact angle of the as-produced ITO nanorod films was 110.9° and increased to 116.5° after annealing at 500 °C.

STRUCTURE AND PHOTOLUMINESCENCE PROPERTIES OF SILICON OXYCARBIDE THIN FILMS DEPOSITED BY THE RF REACTIVE SPUTTERING

2011 ◽  
Vol 25 (22) ◽  
pp. 2983-2990 ◽  
Author(s):  
YINQIAO PENG ◽  
JICHENG ZHOU ◽  
XUQIANG ZHENG ◽  
BAOXING ZHAO ◽  
XIAOCHAO TAN
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Reactive Sputtering ◽  
Silicon Oxycarbide ◽  
Silicon Substrates ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films ◽  
Sintered Silicon

Silicon oxycarbide ( SiCO ) thin films were prepared by the RF reactive sputtering technique on n-type silicon substrates with the target of sintered silicon carbide ( SiC ), and high purity oxygen was used as the reactant gas. The as-deposited films were annealed at temperatures of 600°C, 800°C, and 1000°C under nitrogen ambient, respectively. The films were characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction and photoluminescence (PL) spectrophotometer. The results show that annealing temperature plays an important role in the structure and photoluminescence of the films. The temperature 600°C is the most favorable annealing temperature for SiO 2 crystallization and the formation of 6H- SiC crystal phase in the SiCO films. The intense PL peaks located at 375 nm and 470 nm are observed at room temperature. The origin of the PL was discussed.

Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared onto Glass by Sol-Gel Spin Coating Method

2011 ◽  
Vol 343-344 ◽  
pp. 116-123
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Cheng Jye Chu ◽  
Ru Yuan Yang ◽  
Ruei Ming Huang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical And Electrical Properties ◽  
Coating Method ◽  
Ito Thin Films

In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

Annealing Temperature Dependent on Microstructure and Ethanol Gas Sensing Properties of TiO2Thin Films

2013 ◽  
Vol 770 ◽  
pp. 213-216
Author(s):  
Benjarong Samransuksamer ◽  
Worawarong Rakreungdet ◽  
Supattanapong Dumrongrattana ◽  
M. Horprathum ◽  
Pitak Eiamchai ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Gas Sensing ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Sensing Properties ◽  
Dc Reactive Magnetron Sputtering ◽  
Gas Sensing Properties ◽  
Microstructure Morphology ◽  
Deposited Films

The TiO2 thin films were prepared by a dc reactive magnetron sputtering technique from high purity Ti target on silicon (100) wafers and alumina substrates inter-digital with gold electrodes. The as-deposited films were annealed from 400°C up to 800°C with 100 °C steps for 1 hour in air ambience in order to promote microstructure, morphology and gas-sensing properties. The change in microstructure and morphology of the films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The enhancement in the gas-sensing properties was test by ethanol gas. The prepared thin films were exposed to ethanol gas at concentration 1,000 ppm in purify dry air carrier. The resistance was measured as a function of the ethanol concentration of the films at operated temperatures in the range of 250 - 350°C. The influence of annealing temperature at 500 °C of TiO2 thin film has a highest sensitivity at 350 °C operated temperature.

scholarly journals STRUCTURE AND OPTICAL PROPERTIES OF CdSe THIN FILMS AS A FUNCTION OF THE ANNEALING TIME

2017 ◽  
Vol 27 (5) ◽  
pp. 102
Author(s):  
Eman M. Noori
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Structural Investigation ◽  
Wave Length ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Air Atmosphere ◽  
Deposited Films

Cadmium (Cd) and selenide powder used to prepared cadmium selenide alloy. (CdSe) thin films of thickness 1320 Å were thermally evaporated technique deposited on glass substrate at room temperature. The as-deposited films were annealed in air atmosphere at 100oC, for three different annealing times (60, 120 and 180 minutes). The structural investigation performed by x-ray diffraction (XRD) technique; showed that the films have a polycrystalline and hexagonal (wurtzite) structure. For all deposited films the preferential orientation is (002).The value of lattice constant (a), grain size, strain and dislocation density of the deposited films are calculated and their variations with annealing times are studied. The absorbance spectra of cadmium selenide thin films were recorded in the wave length range of 400 nm to 900 nm. The values of the optical band gap energy, Eg (allowed direct transitions), calculated from the absorption spectra, ranged between (2.54 and 2.41) eV.

Thickness dependent electrical characterization of electron beam evaporated n-type CdSe thin films

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Different Thickness ◽  
Deposited Films

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

Sign in / Sign up

Export Citation Format

Share Document