scholarly journals Unveiling the Direct Correlation between the CVD-Grown Graphene and the Growth Template

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Junghyun Lee ◽  
Jihyung Seo ◽  
Sungchul Jung ◽  
Kibog Park ◽  
Hyesung Park
Keyword(s):  
Graphene Sheet ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Industrial Applications ◽  
Monolayer Graphene ◽  
Low Carbon ◽  
Large Area ◽  
High Quality ◽  
Carbon Solubility ◽  
Grown Graphene

Chemical vapor deposition (CVD) is known to produce continuous, large-area graphene sheet with decent physical properties. In the CVD process, catalytic metal substrates are typically used as the growth template, and copper has been adopted as the representative material platform due to its low carbon solubility and resulting monolayer graphene growth capability. For the widespread industrial applications of graphene, achieving the high-quality is essential. Several factors affect the qualities of CVD-grown graphene, such as pressure, temperature, carbon precursors, or growth template. In this work, we provide detailed analysis on the direct relation between the metallic growth substrate (copper) and overall properties of the resulting CVD-grown graphene. The surface morphology of copper substrate was modulated via simple chemical treatments, and its effect on physical, optical, and electrical properties of graphene was analyzed. Based on these results, we propose a simple synthesis route to produce high-quality, continuous, monolayer graphene sheet, which can facilitate the commercialization of CVD graphene into reality.

scholarly journals Effect of a Balanced Concentration of Hydrogen on Graphene CVD Growth

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
S. Chaitoglou ◽  
E. Pascual ◽  
E. Bertran ◽  
J. L. Andujar
Keyword(s):  
Copper Substrate ◽  
Single Layer ◽  
Chemical Vapor ◽  
Experimental System ◽  
Single Layer Graphene ◽  
Growth Time ◽  
Monolayer Graphene ◽  
Flow Ratio ◽  
Large Area ◽  
Hydrogen Flow

The extraordinary properties of graphene make it one of the most interesting materials for future applications. Chemical vapor deposition (CVD) is the synthetic method that permits obtaining large areas of monolayer graphene. To achieve this, it is important to find the appropriate conditions for each experimental system. In our CVD reactor working at low pressure, important factors appear to be the pretreatment of the copper substrate, considering both its cleaning and its annealing before the growing process. The carbon precursor/hydrogen flow ratio and its modification during the growth are significant in order to obtain large area graphene crystals with few defects. In this work, we have focused on the study of the methane and the hydrogen flows to control the production of single layer graphene (SLG) and its growth time. In particular, we observe that hydrogen concentration increases during a usual growing process (keeping stable the methane/hydrogen flow ratio) resulting in etched domains. In order to balance this increase, a modification of the hydrogen flow results in the growth of smooth hexagonal SLG domains. This is a result of the etching effect that hydrogen performs on the growing graphene. It is essential, therefore, to study the moderated presence of hydrogen.

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

Synthesis of Large-Area and Monolayer of Graphene: Role of Transition Metal Support and Growth Time by CVD Method

2011 ◽  
Vol 306-307 ◽  
pp. 331-335
Author(s):  
Hui Gao ◽  
Yun Fei Wang ◽  
Yan Xia Liu ◽  
Er Qing Xie ◽  
Pulickel M. Ajayan
Keyword(s):  
Graphene Sheet ◽  
Chemical Vapor ◽  
Liquid Hydrocarbon ◽  
Growth Time ◽  
Monolayer Graphene ◽  
Large Area ◽  
Cvd Method ◽  
Graphene Synthesis ◽  
Transmission Electron ◽  
Metal Support

Continuous monolayer graphene sheet with large area has been synthesized via chemical vapor deposition (CVD) method using liquid hydrocarbon as precursor. Synthesis parameters including growth substrate and growth time have been investigated to assess their influence on monolayer graphene synthesis. Raman spectroscopy and high resolution transmission electron microscopy (HRTEM) reveal that the number of layers and quality of graphene sheet depend greatly on the varied synthesis parameter. The study could be used to improve understanding the growth of graphene by CVD method in order to meet the needs of graphene in various electronic applications.

Wetting behaviors and applications of metal-catalyzed CVD grown graphene

2018 ◽  
Vol 6 (45) ◽  
pp. 22437-22464 ◽  
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Rishi Ranjan Kumar ◽  
Sk Masiul Islam ◽  
V. Arivazhagan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Graphene Films ◽  
Cvd Growth ◽  
Grown Graphene ◽  
Metal Catalyzed ◽  
Wetting Behaviors

Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one of the most important techniques to produce high quality and large area graphene films.

Multiple Transfer Used on Repairing Transparent and Electric Film Based on CVD - Grown Graphene

2013 ◽  
Vol 774-776 ◽  
pp. 634-639
Author(s):  
Peng Fei Zhao ◽  
Da Wei He ◽  
Yong Sheng Wang ◽  
Ming Fu ◽  
Hong Peng Wu ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Gas Flow ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Gas Flow Rate ◽  
Large Area ◽  
Spectroscopy Analysis ◽  
Photoelectric Device ◽  
Grown Graphene

We optimized the CH4 and H2 gas flow rate of chemical vapor deposition (CVD) graphene growth and obtained larger area, fewer-layered graphene grown on Cu foils. After transfering to SiO2 substrate by PMMA more than 3 times to repair the defect of monolayer graphene film, we synthesized large area, transparent and continuous graphene film. The morphology and structure were characterized by SEM and Raman spectroscopy. Analysis of electrical properties and optical properties show that we obtained low resistance and high transparency of ~90%, which could be used on photoelectric device as solar cell and acceptable for replacing commercial ITO electrodes.

Highly-Sensitive Graphene Nano-Ribbon-Base Strain Sensor

2016 ◽  
Author(s):  
Shinichirou Sasaki ◽  
Meng Yang ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Graphene Film ◽  
Copper Substrate ◽  
Strain Sensor ◽  
Sensitive Strain ◽  
Bending Test ◽  
Synthesis Process ◽  
Monolayer Graphene ◽  
Large Area ◽  
High Quality ◽  
Highly Sensitive

Large-area and high-quality monolayer graphene was synthesized in order to fabricate a graphene-base highly sensitive strain sensor. A rapid LPCVD (Low Pressure Chemical vaper deposition) synthesis process of monolayer graphene was developed by using acetylene as a resource gas. To synthesize high-quality single-crystal graphene, the surface of copper substrate was strongly orientated to (111) crystallographic plane. By optimizing the concentration of acetylene gas by diluting hydrogen, the high quality of monolayer single-crystalline graphene film was successfully grown on the copper substrate. A strain sensor was fabricated using the graphene-coated Cu foils by applying the MEMS process and reactive ion etching (RIE). Then, the sensor was transferred onto a polydimethysiloxane (PDMS) substrate. Tree-dimensional bending test was performed to investigate the piezoresistive property of the patterned graphene nano-ribbon. It was confirmed that the highly sensitive strain sensor was obtained when the width of the nano-ribbon was thinner than 70 nm.

Multilayer Graphene-Based Carbon Interconnect

2012 ◽  
Vol 1407 ◽  
Author(s):  
Tianhua Yu ◽  
Edwin Kim ◽  
Nikhil Jain ◽  
Bin Yu
Keyword(s):  
Performance Metrics ◽  
Monolayer Graphene ◽  
Multilayer Graphene ◽  
Large Area ◽  
Electrical Stress ◽  
Oxygen Plasma Etching ◽  
Doping Technique ◽  
System Breakdown ◽  
Grown Graphene ◽  
On Chip

ABSTRACT3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.

Sign in / Sign up

Export Citation Format

Share Document