Space Charge and Electric Field Analysis on Contaminated XLPE Insulator

<p>Nowadays, XLPE cable has been widely used because it has better resistance than other cables. XLPE insulation has unique features including a high dielectric strength and high insulation resistance. A lot of researches based on hardware and software have been conducted to prove the effectiveness of XLPE cable such as AC and DC applications and Space Charge Distribution measurement under HVDC at High Temperature. This research focused on analysis of space charge and electric field on XLPE cable with effect of non-uniform contamination layer by using Quickfield Software. Non-uniform contaminations have been applied along XLPE cable using Arsenic Tribromide (AsBr3), Boron Bromide (BBr3), Ethylene Dichloride (CH2C1), Formic Acid (CH1O2), Formamide (CH3NO) and Alcohol element. Presence of these contamination elements represent of underground contamination. The size and layer of the contamination were non-uniform type. From the results, it is shown that lower dielectric constant of contamination will affect more on charge of XLPE insulation. As a conclusion, it can be seen lower dielectric constant value of contamination element greatly affecting the performance of XLPE insulation. Furthermore, size of contamination also influences the content of charge in contamination where the bigger the contamination size, the more charge contained in the contamination.</p>

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Generating high dielectric constant blends from lower dielectric constant dipolar polymers using nanostructure engineering

Nano Energy ◽

10.1016/j.nanoen.2016.12.021 ◽

2017 ◽

Vol 32 ◽

pp. 73-79 ◽

Cited By ~ 40

Author(s):

Yash Thakur ◽

Bing Zhang ◽

Rui Dong ◽

Wenchang Lu ◽

C. Iacob ◽

...

Keyword(s):

Dielectric Constant ◽

High Dielectric Constant ◽

Lower Dielectric Constant ◽

High Dielectric

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Electric Field Analysis of Space Charge Injection from a Conductive Nano-Filler Electrode

Chinese Physics Letters ◽

10.1088/0256-307x/27/7/077303 ◽

2010 ◽

Vol 27 (7) ◽

pp. 077303 ◽

Cited By ~ 5

Author(s):

Xiao Chun ◽

Zhang Ye-Wen ◽

Zheng Fei-Hu ◽

Wei Wen-Jie ◽

An Zhen-Lian

Keyword(s):

Electric Field ◽

Space Charge ◽

Charge Injection ◽

Field Analysis ◽

Electric Field Analysis

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Research on Electric Field Simulation of Ring Capacitance Sensor Based on Finite Element Method

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.105.221 ◽

2021 ◽

Vol 105 ◽

pp. 221-227

Author(s):

Hui Ling Wang ◽

Chun Li Cai

Keyword(s):

Dielectric Constant ◽

Finite Element ◽

Electric Field ◽

Field Intensity ◽

Electric Field Intensity ◽

Element Model ◽

Field Analysis ◽

Optimal Structure ◽

Capacitance Sensor ◽

Finite Element Software

The working principle of ring capacitance sensor is introduced, that is capacitance fringe effect. Finite element model is established through the Hybrid-Trefftz algorithm. Electric field analysis and simulation calculation of different sensor model are done with the finite element software ANSYS, and the optimal structure combination is obtained. And followed the example of optimal structure, the relation of dielectric constant and electric field intensity were given. The result of simulation shows the most direct and the most important two parameters that affect the sensor performance in the design of the ring capacitance sensor are the two electrodes spacing and the length. The dielectric constant of measured medium is smaller, the intensity of electric field intensity is greater. The simulation for subsequent product design has a good theoretical guidance.

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Development of High-Dielectric-Strength Ceramic Film Capacitors for Advanced Power Electronics

International Symposium on Microelectronics ◽

10.4071/isom-2012-wa33 ◽

2012 ◽

Vol 2012 (1) ◽

pp. 000609-000616

Author(s):

Beihai Ma ◽

Manoj Narayanan ◽

Shanshan Liu ◽

Sheng Tong ◽

U. (Balu) Balachandran

Keyword(s):

Dielectric Constant ◽

Power Electronics ◽

Room Temperature ◽

Breakdown Strength ◽

Dielectric Strength ◽

X Ray Diffraction ◽

Lead Lanthanum Zirconate Titanate ◽

Solution Deposition ◽

Ceramic Film ◽

High Dielectric

Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ≈25.4 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ≈-520 MPa in the ≈2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ≈210 MPa in the ≈2-μm-thick PLZT grown on PtSi substrates.

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Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

MRS Proceedings ◽

10.1557/proc-476-231 ◽

1997 ◽

Vol 476 ◽

Cited By ~ 9

Author(s):

C.T. Rosenmaver ◽

J. W. Bartz ◽

J. Hammes

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Dielectric Strength ◽

Low Dielectric Constant ◽

Thermal Treatments ◽

Test Results ◽

Low Dielectric ◽

Metal Insulator Metal ◽

Thickness Standard ◽

High Dielectric

AbstractPrevious work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

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High-K dielectric sulfur-selenium alloys

Science Advances ◽

10.1126/sciadv.aau9785 ◽

2019 ◽

Vol 5 (5) ◽

pp. eaau9785 ◽

Cited By ~ 3

Author(s):

Sandhya Susarla ◽

Thierry Tsafack ◽

Peter Samora Owuor ◽

Anand B. Puthirath ◽

Jordan A. Hachtel ◽

...

Keyword(s):

Dielectric Constant ◽

Metal Oxides ◽

High Dielectric Constant ◽

Dielectric Material ◽

Dielectric Strength ◽

Dielectric Materials ◽

High K ◽

Device Applications ◽

High K Dielectric ◽

High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

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