scholarly journals A sub-1V high PSRR OpAmp based β-multiplier CMOS bandgap voltage reference with resistive division

2019 ◽  
Vol 15 (1) ◽  
pp. 155
Author(s):  
Anass SLAMTI ◽  
Youness MEHDAOUI ◽  
Driss CHENOUNI ◽  
Zakia LAKHLIAI
Keyword(s):  
Temperature Coefficient ◽  
Power Supply ◽  
Supply Voltage ◽  
Voltage Source ◽  
Voltage Reference ◽  
Voltage Range ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Bandgap Voltage Reference ◽  
Supply Rejection

<span lang="EN-US">A sub-1V opamp based β-multiplier CMOS bandgap voltage reference (BGVR) with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed in this paper. A current mode regulator scheme is inserted to isolate the supply voltage of the operational amplifier (opamp) and the supply voltage of the BGVR core from the supply voltage source in order to reduce ripple sensitivity and to achieve a high PSRR. The proposed circuit is designed and simulated in 0.18-μm standard CMOS technology. The proposed voltage reference delivers an output voltage of 634.6mV at 27°C. Tthe measurement temperature coefficient is 22,3ppm/°C over temperature range -40°C to 140°C, power supply rejection ratio is -93dB at 10kHz and -71dB at 1MHz and a line regulation of 104μV/V is achieved over supply voltage range 1.2V to 1.8V. The layout area of the proposed circuit is 0.0337mm<sup>2</sup>. The proposed sub-1V bandgap voltage reference can be used as an internal voltage reference in low power LDO regulators and switching regulators.</span>

One Kind of Band-Gap Voltage Reference Source with Piecewise High-Order Temperature Compensation and Power Supply Rejection Ratio

2014 ◽  
Vol 644-650 ◽  
pp. 3575-3578
Author(s):  
Zheng Da Li ◽  
Lin Xie
Keyword(s):  
Band Gap ◽  
Power Supply ◽  
Temperature Compensation ◽  
Supply Voltage ◽  
Voltage Regulation ◽  
Reference Source ◽  
Voltage Reference ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Supply Rejection

This paper designed a new band-gap voltage reference circuit with two-stage temperature compensation.It realizes non-linear temperature compensation by using NMOS-pipe leakage current and increases the power supply rejection ratio of the band-gap voltage reference source by introducing negative feedback between the operational amplifier and the power supply. What is more, the paper simulates the band-gap voltage reference source based on CSMC 0.5μm CMOS technique. The result as follow: the band-gap voltage reference source has the temperature coefficient of 8.2ppm/oC among-40-120oC with the supply voltage of 3V, the low-frequency power supply rejection ratio is 83dBat 27oC and the power supply rejection ratio is 71dB in 1KHz, the output voltage regulation is 1.05mV/V in the supply voltage range from 2.4V to 5V.

Design of High Power Supply Rejection Ratio Complementary Metal-Oxide-Semiconductor Bandgap Voltage Reference Using Single Node Approach

2019 ◽  
Vol 17 (10) ◽  
pp. 777-783
Author(s):  
Shishu Pal ◽  
Ashutosh Nandi
Keyword(s):  
High Power ◽  
Power Supply ◽  
Circuit Simulation ◽  
Reference Voltage ◽  
Voltage Reference ◽  
Rejection Ratio ◽  
Power Supply Rejection Ratio ◽  
Bandgap Voltage Reference ◽  
Reference Circuit ◽  
Supply Rejection

This paper describes a compact, low voltage and high power supply rejection ratio (PSRR) Bandgap voltage reference circuit by using subthreshold MOSFETs. The proposed reference circuit is implemented using 0.18 μm CMOS technology. The circuit simulation is performed using the Cadence Spectre and Synopsys Hspice. The circuit generates the mean output reference voltage of 164 mV and temperature coefficient of 15.5 ppm/°C when temperature is swept from –40 °C to 120 °C at power supply of 1.2 V. For better PSRR, a feed forward mechanism is used. The proposed design has only single transistor for start-up circuit. The measured settling time for output reference voltage is observed to be less than 4 μs. No filtering capacitor is used to improve the PSRR, which is –97 dB up to 1 MHz and subsequently reduces to –47.5 dB at 158 MHz.

A High-Order CMOS Bandgap Voltage Reference

2014 ◽  
Vol 989-994 ◽  
pp. 1165-1168
Author(s):  
Qian Neng Zhou ◽  
Yun Song Li ◽  
Jin Zhao Lin ◽  
Hong Juan Li ◽  
Chen Li ◽  
...  
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Power Supply Voltage ◽  
Power Supply Rejection Ratio ◽  
Voltage Deviation ◽  
Bandgap Voltage Reference

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

A Curvature-Compensated, High Power Supply Rejection CMOS Bandgap Reference for MEMS Micro-Accelerometer

2011 ◽  
Vol 483 ◽  
pp. 481-486 ◽  
Author(s):  
Xiao Wei Liu ◽  
Bing Jun Lv ◽  
Peng Fei Wang ◽  
Liang Yin ◽  
Na Xu
Keyword(s):  
Temperature Coefficient ◽  
High Power ◽  
Power Supply ◽  
Supply Voltage ◽  
Reference Voltage ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Power Supply Rejection Ratio ◽  
Compensation Technique ◽  
Supply Rejection

The reference is an important part in the accelerometer system. With the development of science and technology, the request of the performance of accelerometers is increasingly higher and the precision of reference directly affects the performance of accelerometers. Therefore, a reference voltage applicable to accelerometers is presented based on the analysis of basic principles of conventional bandgap reference (BGR) in this paper. A high-order curvature compensation technique, which uses a temperature dependent resistor ratio generated by a high poly resistor and a nwell resistor, effectively serves to reduce temperature coefficient of proposed reference voltage circuit and to a large extent improve its performance. To achieve a high power supply rejection ratio (PSRR) over a broad frequency range, a pre-regulator is introduced to remain the supply voltage of the core circuit of BGR relatively independent of the global supply voltage. The proposed circuitry is designed in standard 2.0μm CMOS process. The simulated result shows that the average temperature coefficient is less than 2ppm/°C in the temperature range from -40 to 120°C. The improvement on temperature coefficient (TC) is about 10 times reduction compared to the conventional approach. And the PSR at DC frequency and 1kHz achieves -107 and -71dB respectively at 9.0V supply voltage.

A High-Precision Bandgap Voltage Reference with Automatic Curvature-Compensation Technique

2019 ◽  
Vol 28 (13) ◽  
pp. 1950214
Author(s):  
Ze-kun Zhou ◽  
Hongming Yu ◽  
Yue Shi ◽  
Zhuo Wang ◽  
Bo Zhang
Keyword(s):  
Temperature Coefficient ◽  
High Precision ◽  
Power Supply ◽  
Supply Voltage ◽  
Adaptive Signal Processing ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Temperature Range ◽  
Bandgap Voltage Reference ◽  
Compensation Technique

A high-precision bandgap voltage reference (BGR) with a novel curvature-compensation scheme is proposed in this paper. The temperature coefficient (TC) can be automatically optimized with a built-in adaptive curvature-compensation technique, which is realized in a digitization control way. An exponential curvature-compensation method is first adopted to reduce the TC in a certain degree, especially in low temperature range. Then, the temperature drift of BGR in higher temperature range can be further minimized by dynamic zero-temperature-coefficient point tracking (ZTCPT) with temperature changes. With the help of proposed adaptive signal processing, the output voltage of BGR can approximately maintain zero TC in a wider temperature range. Verification results of the BGR proposed in this paper, which is implemented in 0.35-[Formula: see text]m BiCMOS process, illustrate that the TC of 1.4[Formula: see text]ppm/∘C is realized under the power supply voltage of 3[Formula: see text]V and the power supply rejection of the proposed circuit is [Formula: see text][Formula: see text]dB without any filter capacitor.

Integrated Bandgap Voltage Reference for High Voltage Vehicle Applications

2015 ◽  
Vol 24 (08) ◽  
pp. 1550125 ◽  
Author(s):  
Sergio Saponara
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Power Supply Rejection Ratio ◽  
Compact Size ◽  
Electrical Vehicles ◽  
Bandgap Voltage Reference

This work presents a bandgap voltage reference (BGR) integrated in 0.25-μm bipolar-CMOS-DMOS (BCD) technology. The BGR circuit generates a reference voltage of 1.22 V. It is able to withstand large supply voltage variations of vehicle applications from 4.5 V, e.g., in case of cranking, up to 60-V, maximum value in case of emerging 48-V battery systems for hybrid and electrical vehicles. The circuit has an embedded high-voltage (HV) pseudo-regulator block that provides a more stable internal supply rail for a cascaded low-voltage bandgap core. HV MOS are used only in the pre-regulator block thus allowing the design of a BGR with compact size. The proposed architecture permits to withstand large input voltage variations with a temperature drift of a hundred of ppm/°C, a line regulation (LR) of few mV/V versus the external supply voltage and a power supply rejection ratio (PSRR) higher than 90 dB.

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

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