Nanostructured Nickel Oxide Films Prepared by Chemical Vapor Deposition and Their Electrochromic Properties

2008 ◽  
Vol 8 (5) ◽  
pp. 2703-2706 ◽  
Author(s):  
J. R. Vargas Garcia ◽  
E. M. Lazcano Ugalde ◽  
F. Hernandez Santiago ◽  
J. M. Hallen Lopez
Keyword(s):  
Chemical Vapor Deposition ◽  
Nickel Oxide ◽  
Vapor Deposition ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Optical Transmittance ◽  
Structural Features ◽  
Electrochromic Properties ◽  
Wide Range ◽  
Nio Films

The influence of the deposition conditions on the structural features and electrochromic properties of nickel oxide (NiO) films prepared by chemical vapor deposition has been investigated. NiO films have been prepared on fluorine doped tin oxide (FTO) coated glass substrates from nickel-acetylacetonate precursor and their electrochromic properties have been studied by cyclic voltammetry in a 0.1 M KOH solution at room temperature. Films exhibiting only the NiO phase were obtained at deposition temperatures higher than 450 °C in a wide range of reactor pressures (0.13 to 66.6 kPa). Particularly, NiO films prepared at 500–550 °C from 0.13 to 53.3 kPa are transparent in nature and exhibit a crystallite size varying from 10 to 60 nm. An appreciable anodic electrochromic change from transparent to black coloured resulted from a very porous surface morphology and film thickness of about 3.5 μm. The electrochromic change was maintained over 3000 switching cycles. Nanostructured 3.5 μm-thick NiO films showed a maximum difference in optical transmittance of about 40% in the near-infrared region. These results make the nanostructured NiO films comparables with those prepared by other deposition techniques.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

2021 ◽  
Vol 8 ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Recent Work ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Size Control ◽  
Chemical Vapor ◽  
Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

Domain size, layer number and morphology control for graphene grown by chemical vapor deposition

2017 ◽  
Vol 10 (04) ◽  
pp. 1730003 ◽  
Author(s):  
Ruiwen Xue ◽  
Irfan H. Abidi ◽  
Zhengtang Luo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Domain Size ◽  
Past Research ◽  
Production Methods ◽  
The Past ◽  
Number Of Layers ◽  
Size Number ◽  
Wide Range

Over the past a few years, high-quality graphene preparation has been evolved from low-yield micromechanical exfoliation in including a wide range of production methods, in particular by chemical vapor deposition (CVD). Here, we review the state-of-the-art on synthesis of graphene using CVD method and the strategies to control the graphene grain size, number of layers and morphology, mainly focusing on the graphene growth that uses Cu as substrate. We highlight the success of the past research in the field and provide a review of the methods that were used for such controlled synthesis.

scholarly journals Plasma-Assisted Chemical Vapor Deposition of F-Doped MnO2 Nanostructures on Single Crystal Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1335
Author(s):  
Lorenzo Bigiani ◽  
Chiara Maccato ◽  
Alberto Gasparotto ◽  
Cinzia Sada ◽  
Elza Bontempi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Data Storage ◽  
Vapor Deposition ◽  
Oxygen Deficiency ◽  
Chemical Vapor ◽  
Magnetic Ordering ◽  
Analytical Techniques ◽  
Structural Features ◽  
Optical Absorption Spectroscopy ◽  
Magnetic Characteristics

MnO2 nanostructures were fabricated by plasma assisted-chemical vapor deposition (PA-CVD) using a fluorinated diketonate diamine manganese complex, acting as single-source precursor for both Mn and F. The syntheses were performed from Ar/O2 plasmas on MgAl2O4(100), YAlO3(010), and Y3Al5O12(100) single crystals at a growth temperature of 300 °C, in order to investigate the substrate influence on material chemico-physical properties. A detailed characterization through complementary analytical techniques highlighted the formation of highly pure and oriented F-doped systems, comprising the sole β-MnO2 polymorph and exhibiting an inherent oxygen deficiency. Optical absorption spectroscopy revealed the presence of an appreciable Vis-light harvesting, of interest in view of possible photocatalytic applications in pollutant degradation and hydrogen production. The used substrates directly affected the system structural features, as well as the resulting magnetic characteristics. In particular, magnetic force microscopy (MFM) measurements, sensitive to the out-of-plane magnetization component, highlighted the formation of spin domains and long-range magnetic ordering in the developed materials, with features dependent on the system morphology. These results open the door to future engineering of the present nanostructures as possible magnetic media for integration in data storage devices.

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