Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature
2015 ◽
Vol 15
(10)
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pp. 7586-7589
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Keyword(s):
Resistive switching characteristics of insulating Y2O3 films grown by an atomic layer deposition technique have been investigated with their growth temperature range of 250 °C to 350 °C. Ru/Y2O3/Ru resistors reveal the bi-stable unipolar resistive switching behaviors. Resistive switching behaviors are related to the chemical bonding states of Y2O3 insulating films. As the insulating film growth temperature increases, Y2O3 film becomes much stoichiometric and little contaminated with impurities. Moreover, the resistance ratio high resistance state to low resistance state increases at growth temperature over 300 °C.
2007 ◽
Vol 124-126
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pp. 603-606
2020 ◽
Vol 38
(3)
◽
pp. 032405
Keyword(s):
2015 ◽
Vol 15
(10)
◽
pp. 7569-7572
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