High-Detectivity Perovskite Photodetector Using Combustion-Processed NiOx as p-Type Buffer Layer

2021 ◽  
Vol 21 (9) ◽  
pp. 4660-4664
Author(s):  
Woo-Seong Kim ◽  
Chan-Hyuk Ji ◽  
Se-Young Oh
Keyword(s):  
Dark Current ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Impedance Analysis ◽  
Transient Photocurrent ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Combustion Processes ◽  
Photodetector Device

We fabricated a photodetector device consisting of ITO/NiOx/Perovskite/PC60BM/BCP/Ag. The NiOx layer was deposited using the sol–gel and combustion processes. Combustion-processed NiOx films have advantages such as low annealing temperature, improved perovskite film quality, and better photodetector performance compared to the sol–gel processed NiOx film. The improved film quality, improved charge transfer, and reduced dark current of the device using combustion-processed NiOx film were investigated by measuring the current–voltage characteristics, transient photocurrent, and impedance analysis. The photodetector using the combustion-processed NiOx achieved a high detectivity of 1.20×1013 Jones and bandwidth of over 2 MHz at -0.1 V and 550 nm.

Characterizations of Mesa Structural Near-Infrared n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunction Photodiodes at Low Temperatures

2013 ◽  
Vol 747 ◽  
pp. 217-220 ◽  
Author(s):  
Nathaporn Promros ◽  
Ryūhei Iwasaki ◽  
Suguru Funasaki ◽  
Kyohei Yamashita ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Dark Current ◽  
Low Temperatures ◽  
Near Infrared ◽  
Device Performance ◽  
Current Ratio ◽  
Capacitance Density ◽  
Remarkable Improvement ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi2/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 1011 cmHz1/2/W at-1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K.

Grain Boundary Atomic Structures in SrTiO3 and BaTiO3

2007 ◽  
Vol 558-559 ◽  
pp. 851-856 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Teruyasu Mizoguchi ◽  
S.Y. Choi ◽  
Yukio Sato ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Annealing Temperature ◽  
Unit Length ◽  
Rate Dependency ◽  
Atomic Structures ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
Theoretical Results

SrTiO3 bicrystals with various types of grain boundaries were prepared by joining two single crystals at high temperature. By using the bicrystals, we examined their current-voltage characteristics across single grain boundaries from a viewpoint of point defect segregation in the vicinity of the grain boundaries. Current-voltage property in SrTiO3 bicrystals was confirmed to show a cooling rate dependency from annealing temperature, indicating that cation vacancies accumulate due to grain boundary oxidation. The theoretical results obtained by ab-initio calculation clearly showed that the formation energy of Sr vacancies is the lowest comparing with Ti and O vacancies in oxidized atomosphere. The formation of a double Schottky barrier (DSB) in n-type SrTiO3 is considered to be closely related to the accumulation of the charged Sr vacancies. Meanwhile, by using three types of low angle boundaries, the excess charges related to one grain boundary dislocation par unit length was estimated. In this study, we summarized our results obtained in our group.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

scholarly journals Understanding Dark Current-Voltage Characteristics in Metal-Halide Perovskite Single Crystals

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
Elisabeth A. Duijnstee ◽  
Vincent M. Le Corre ◽  
Michael B. Johnston ◽  
L. Jan Anton Koster ◽  
Jongchul Lim ◽  
...  
Keyword(s):  
Single Crystals ◽  
Dark Current ◽  
Metal Halide ◽  
Metal Halide Perovskite ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Halide Perovskite

The Current‐Voltage Characteristics of a Photoelectrochemical Cell Using p‐Type Porous Si

1985 ◽  
Vol 132 (2) ◽  
pp. 346-349 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Masahiro Nagasu ◽  
Takashi Sakusabe ◽  
Yuji Kiuchi
Keyword(s):  
Photoelectrochemical Cell ◽  
Porous Si ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

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