Optical properties of phenylene–thiophene-based polyazomethine thin films

2017 ◽  
Vol 30 (10) ◽  
pp. 1219-1228 ◽  
Author(s):  
B Jarząbek ◽  
B Hajduk ◽  
M Domański ◽  
B Kaczmarczyk ◽  
P Nitschke ◽  
...  

Thin films of new aromatic polyazomethines, containing thiophene rings in their polymer chain structures, were obtained by the chemical vapor deposition method, via a polycondensation process from thiophene-2,5-dicarbaldehyde and one of four different aromatic diamines, as initial monomers. Spectroscopic ellipsometry, attenuated total reflectance mode of Fourier transform infrared spectroscopy, atomic force microscopy, and wide-angle X-ray diffraction techniques have been used to characterize these films. However, the optical transmission and reflectivity measurements, within the wide spectral UV-Vis-NIR range (0.5–6.2 eV), were the basic method of presented investigations. On the basis of optical measurements, the absorption coefficient spectra of these thin films were obtained and the absorption edge parameters, that is, the energy gap ( EG) and Urbach energy ( EU), were calculated in a way typical for amorphous semiconductors. These parameters allowed one to evaluate the length of conjugation and the extension of localized, defect states inside the energy gap, respectively, and to discuss the electronic transitions, being dependent on the chemical structure and conformation of polymer chains. Optical properties of these new phenylene–thiophene-based polyazomethine films were compared with their entirely phenylene counterparts. In general, the energy gaps of investigated films were clearly smaller (about 0.2 eV) than those of their phenylene counterparts, confirming that the presence of thiophene rings in polyazomethine structures improves conjugation.

this work, the study of optical properties of (As0.5Se0.5 doped with 1% Te) thin films which prepared by thermal vacuum evaporation on glass bases at (R.T) with (100±20) nm thickness deposition rate (1.6nm/s) and study effect of annealing at temperatures (Ta) (348,398,448) K for time (30min) on these properties. The X-ray diffraction technique showed that all prepared films are amorphous in structure at room temperature and annealing films at (348, 398, 448) K. The transmittance spectra of the prepared films fall within a wavelength range (500-1100) nm, and increasing the annealing temperature leads to a decreased in transmission, increased absorption coefficient, and shift of the absorption edge towards low photon energies. The optical measurements showed that the prepared films had an allowed indirect optical energy gap and were found to decrease with the increase of (Ta) within the range (R.T, 348,398,448) K. As indicated by the tails of the localized states, it was observed that they increased by increasing (Ta).


1986 ◽  
Vol 89 ◽  
Author(s):  
W. C. Goltsos ◽  
A. V. Nurmikko ◽  
D. L. Partin

AbstractPhotoluminescence, transmission, and reflectance measurements have yielded information about the states defining an optical gap in thin films and superlattices based on the (Pb,Eu)Te system, including the limit of high Eu concentration. Magneto-optical measurements show the presence of finite spin exchange processes at low Eu-concentrations.


2021 ◽  
Vol 19 (5) ◽  
pp. 132-138
Author(s):  
Maan Abd-Alameer Salih ◽  
Q.S. Kareem ◽  
Mohammed Hadi Shinen

In this exploration Poly lactic corrosive (PLA) was orchestrated the ring-opening polymerization Poly lactic corrosive (PLA) blended with poly(3-hexylthiophene) (P3HT) which prepared by solution. Blends thin films Synthesis by spin coating technique and using Tetrahydrofuran (THF) as solvent. PLA powder was 'characterized by' 'X-ray' 'diffraction', '(FT-IR)'. pure Optical properties (PLA), (PLA)/P3HT blends thin films with different percentage of P3HT (0, 1, 2, and 3) wt% were investigated using UV-VS spectroscopy The results showed that the absorption, absorption coefficient, extinction coefficient and conductivity increase with increasing the rate of deformation P3HT, The energy gap decreases with increasing deformation.


2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.


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