Synthesis of nanometre multi-layered ZrN/(Ti,Al)N coatings by ion-beam-assisted deposition

Author(s):  
M Cao ◽  
L Dong ◽  
G Q Liu ◽  
D J Li

ZrN/(Ti, Al)N nanometre multi-layered coatings with different modulation ratios and ion beam fluxes have been synthesized by ion-beam-assisted deposition at room temperature. X-ray diffraction (XRD), a nano indenter, and a profiler were used to characterize the microstructure and mechanical properties of the coatings. The small-angle XRD pattern indicated a well-defined composition modulation and layer structure. The XRD pattern showed a significant mixture of strong ZrN(111) and (Ti,Al)N(111) textures. At an assisted beam flux of 5 mA and modulation ratio of 2:3, the ZrN/(Ti,Al)N multi-layer possessed the highest hardness (30.1GPa) and elastic modulus (361GPa). Its fracture resistance, and residual stress also showed the best results.

2010 ◽  
Vol 24 (01n02) ◽  
pp. 34-42 ◽  
Author(s):  
M. TAN ◽  
D. J. LI ◽  
G. Q. LIU ◽  
L. DONG ◽  
X. Y. DENG ◽  
...  

ZrB 2, W , WN x coatings and ZrB 2/ W , ZrB 2/ WN x multilayered coatings have been synthesized by ion beam assisted deposition at room temperature. X-ray diffraction (XRD), XP-2 surface profiler, scanning electron microscopy (SEM) and nano indenter were employed to investigate the influence of modulation periods and N + beam bombardment on microstructure and mechanical properties of the coatings. The low-angle XRD patterns and cross-sectional SEM indicate a well-defined composition modulation and layer structure of the multilayers. The multilayers with modulation periods ranging from 9 to 16 nm without N + bombardment possessed higher hardness and elastic modulus than the rule-of-mixtures value of monolithic ZrB 2 and W coatings. The highest hardness was 24 GPa. N + bombardment to growing multilayers gave a significant contribution to mechanical property enhancement. When modulation period is 9.6 nm, ZrB 2/ WN x multilayer with 200 eV N + bombardment reveals the highest hardness (30.2 GPa) and elastic modulus. This hardest multilayer also showed the improved residual stress and fracture resistance.


1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy


1988 ◽  
Vol 128 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant ◽  
S. B. Qadr

ABSTRACTEpitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.


2010 ◽  
Vol 24 (01n02) ◽  
pp. 43-50 ◽  
Author(s):  
L. DONG ◽  
G. Q. LIU ◽  
Y. D. SUN ◽  
M. Y. LIU ◽  
D. J. LI

TiB 2/ Si 3 N 4 nano multilayers have been synthesized under different deposition parameters related to substrate by ion beam assisted deposition (IBAD). XRD, Nano indenter, profiler, and multi-functional tester for material surface properties were used to characterize the microstructure and mechanical properties of the multilayers. The results indicated a well-defined composition modulation and layer structure of the multilayers. To the multilayers with constant modulation ratio of 15.4:1 and modulation period of 11.8 nm, the multilayer deposited on Al 2 O 3(111) substrate with 38 nm-thick Ti buffer layer at deposition temperature of 225°C revealed the highest hardness (37.4 GPa) and elastic modulus. This hardest multilayer also showed the improved residual stress, friction coefficient, and fracture resistance.


2020 ◽  
Vol 56 (2) ◽  
pp. 269-277
Author(s):  
V.E. Sokol’skii ◽  
D.V. Pruttskov ◽  
O.M. Yakovenko ◽  
V.P. Kazimirov ◽  
O.S. Roik ◽  
...  

Anorthite and gehlenite crystalline structure and short-range order of anorthite melt have been studied by X-ray diffraction in the temperature range from room temperature up to ~ 1923 K. The corresponding anorthite and gehlenite phases were identified as well as amorphous component for anorthite samples having identical shape to XRD pattern of the anorthite melt. The structure factor and the radial distribution function of atoms of the anorthite melt were calculated from the X-ray high-temperature experimental data. The partial structural parameters of the short-range order of the melt were reconstructed using Reverse Monte Carlo simulations.


2017 ◽  
Vol 73 (8) ◽  
pp. 600-608 ◽  
Author(s):  
Karolina Schwendtner ◽  
Uwe Kolitsch

The crystal structures of hydrothermally synthesized aluminium dihydrogen arsenate(V) dihydrogen diarsenate(V), Al(H2AsO4)(H2As2O7), gallium dihydrogen arsenate(V) dihydrogen diarsenate(V), Ga(H2AsO4)(H2As2O7), and diindium bis[dihydrogen arsenate(V)] bis[dihydrogen diarsenate(V)], In2(H2AsO4)2(H2As2O7)2, were determined from single-crystal X-ray diffraction data collected at room temperature. The first two compounds are representatives of a novel sheet structure type, whereas the third compound crystallizes in a novel framework structure. In all three structures, the basic building units areM3+O6octahedra (M= Al, Ga, In) that are connectedviaone H2AsO4−and two H2As2O72−groups into chains, and furtherviaH2As2O72−groups into layers. In Al/Ga(H2AsO4)(H2As2O7), these layers are interconnected by weak-to-medium–strong hydrogen bonds. In In2(H2AsO4)2(H2As2O7)2, the H2As2O72−groups link the chains in three dimensions, thus creating a framework topology, which is reinforced by weak-to-medium–strong hydrogen bonds. The three title arsenates represent the first compounds containing both H2AsO4−and H2As2O72−groups.


2020 ◽  
Vol 990 ◽  
pp. 302-305
Author(s):  
Razif Nordin ◽  
Nadia Latiff ◽  
Rizana Yusof ◽  
Wan Izhan Nawawi ◽  
M.Z. Salihin ◽  
...  

Commercial grade ZnO were sieved into particle size of 38 to 90 μm at room temperature. X-ray diffraction (XRD) pattern confirms the hexagonal wurzite structure of ZnO microparticles. Irregular shapes of ZnO microparticles were observed by scanning electron microscope (SEM). Fourier transform infrared spectra (FTIR) confirmed the presence of Zn-O band. In addition, Uv-visible spectra (UV-Vis) were empolyed to estimate the band gap energy of ZnO microparticles.


2015 ◽  
Vol 773-774 ◽  
pp. 1096-1100 ◽  
Author(s):  
Muhammad Mubashir ◽  
Yin Fong Yeong ◽  
Lau Kok Keong ◽  
Azmi bin Mohd Shariff

In the present work, DDR3 zeolite crystals were synthesized using two different methods. The silica sources used to synthesize DDR3 crystals were tetramethoxysilane (TMOS) and Ludox-40. The resultant samples were characterized using X-ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FESEM). The XRD results showed that the peaks representing DDR3 structure were not obtained for the sample synthesized in 5 days at room temperature with ultrasonic pre-treatment of 3h using Ludox-40 as silica source. On the other hand, the XRD pattern obtained for the sample synthesized in 25 days at 160 o C using TMOS as a silica source were similar with the XRD peaks reported in the literature. From these results, it can be concluded that the synthesis conditions of 25 days at 160 o C using TMOS as silica source were the favorable conditions in obtaining DDR3 crystal structure.


2010 ◽  
Vol 663-665 ◽  
pp. 1325-1328 ◽  
Author(s):  
De Hui Sun ◽  
De Xin Sun ◽  
Yu Hao

The superparamagnetic NiFe2O4 nanoparticles were synthesized using a hydrothermal technology through P123 sphere micelles as ‘nanoreactor’ in this work. Their morphologies, structures, surface properties and magnetism were characterized by FE-SEM, XRD, FTIR, and VSM, respectively. The nickel ferrite samples are nearly spherical and homogeneous nanoparticles with average size range of about 50-120 nm. They possess superparamagnetism at room temperature and higher saturation magnetization. X-ray diffraction (XRD) pattern confirms that the samples belong to the cubic crystal system with an inverse-spinel structure. Fourier transform infrared (FTIR) absorption spectrum indicates that the NiFe2O4 nanoparticles are stabilized by the P123 adsorbed on the surface of nanoparticles.


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