scholarly journals Collision Cascade and Spike Effects of X-ray Irradiation on Optoelectronic Devices

2016 ◽  
Vol 130 (1) ◽  
pp. 93-97 ◽  
Author(s):  
S. Salleh ◽  
H.F. Abdul Amir ◽  
A. Kumar Tiwari ◽  
F. Pien Chee
Keyword(s):  
Optoelectronic Devices ◽  
Collision Cascade ◽  
X Ray

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

1999 ◽  
Vol 595 ◽  
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

AbstractWe report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Thermal unequilibrium of strained black CsPbI3 thin films

Science ◽  
2019 ◽  
Vol 365 (6454) ◽  
pp. 679-684 ◽  
Author(s):  
Julian A. Steele ◽  
Handong Jin ◽  
Iurii Dovgaliuk ◽  
Robert F. Berger ◽  
Tom Braeckevelt ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Grazing Incidence ◽  
Optically Active ◽  
Wide Angle ◽  
Biaxial Strain ◽  
X Ray ◽  
X Ray Scattering ◽  
Thermal Stability Of

The high-temperature, all-inorganic CsPbI3 perovskite black phase is metastable relative to its yellow, nonperovskite phase at room temperature. Because only the black phase is optically active, this represents an impediment for the use of CsPbI3 in optoelectronic devices. We report the use of substrate clamping and biaxial strain to render black-phase CsPbI3 thin films stable at room temperature. We used synchrotron-based, grazing incidence, wide-angle x-ray scattering to track the introduction of crystal distortions and strain-driven texture formation within black CsPbI3 thin films when they were cooled after annealing at 330°C. The thermal stability of black CsPbI3 thin films is vastly improved by the strained interface, a response verified by ab initio thermodynamic modeling.

Synthesis of Zn1–xMgxO and its structural characterization

2001 ◽  
Vol 16 (4) ◽  
pp. 903-906 ◽  
Author(s):  
M. S. Tomar ◽  
R. Melgarejo ◽  
P. S. Dobal ◽  
R. S. Katiyar
Keyword(s):  
Crystal Structure ◽  
Spin Coating ◽  
Optoelectronic Devices ◽  
Spectroscopic Studies ◽  
Structural Behavior ◽  
Material System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Raman Spectroscopic ◽  
Mg Substitution

Zn1–xMgxO is an important material for optoelectronic devices. We synthesized this material using a solution-based route. We investigated in detail the structural behavior of this material system using x-ray diffraction and Raman spectroscopy. Mg substitution up to x ≈ 0.10 does not change the crystal structure, as revealed by x-ray diffraction and Raman spectroscopic studies. This synthesis route is also suitable to prepare thin films by spin coating with the possibility of p and n doping.

Electrical Properties of ZnO Nanoparticles

2020 ◽  
pp. 01-05
Author(s):  
San San Htwe
Keyword(s):  
Building Materials ◽  
Optoelectronic Devices ◽  
Precipitation Method ◽  
Zno Nanoparticle ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Compositional Properties ◽  
Scanning Electron

This In the research paper analyses structural, morphological, compositional properties, optical properties and energy band gap of ZnO nanoparticle synthesized using zinc acetate dehydrate and NaOH using precipitation method reported. The synthesized nanoparticles analyze using X-Ray Diffraction (XRD) and scanning electron microscopy (SEM), and UV- Vis Spectroscopy. Synthesized nanoparticles can be utilized as building materials in fabrication of various personal care products and optoelectronic devices including solar cells, LED’s etc.

Fabrication and Characterization of Optically Transparent PVDF Films Embedded with Gold Nanoparticles

2021 ◽  
Author(s):  
Caleb Duff ◽  
Alan Rowland ◽  
Alexander Long ◽  
Yanwen Wu
Keyword(s):  
Gold Nanoparticles ◽  
Polyvinylidene Fluoride ◽  
Optoelectronic Devices ◽  
Initial Step ◽  
X Ray Diffraction ◽  
Poling Field ◽  
X Ray ◽  
Piezoelectric Polymer ◽  
Fabrication And Characterization

Abstract Polyvinylidene fluoride is a piezoelectric polymer that can be cast into transparent thin films. New properties can be introduced by embedding nanoparticles in this polymer, making it an excellent platform for flexible and tunable electronic and optoelectronic devices. We develop a recipe for embedding plasmonic gold nanoparticles into these films while maintaining their transparency as an initial step to activate optical response in the film. We characterize films made under different poling conditions with and without nanoparticle inclusions using X-ray diffraction. We find that the inclusion of gold nanoparticles screens the poling field and has a sizable effect on the phase of the produced films.

scholarly journals Influence of Quantum-Dots Density on Average In-Plane Strain of Optoelectronic Devices by X-Ray Renninger Scanning

2010 ◽  
Author(s):  
Raul O. Freitas ◽  
Sérgio L. Morelhão ◽  
Alain A. Quivy ◽  
Marília Caldas ◽  
Nelson Studart
Keyword(s):  
Quantum Dots ◽  
Plane Strain ◽  
Optoelectronic Devices ◽  
X Ray

Fabrication and characterization of ZnMgO nanowalls grown on 4H-SiC by molecular beam epitaxy

2019 ◽  
Vol 52 (1) ◽  
pp. 168-170
Author(s):  
Mieczyslaw A. Pietrzyk ◽  
Aleksandra Wierzbicka ◽  
Marcin Stachowicz ◽  
Dawid Jarosz ◽  
Adrian Kozanecki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Growth Conditions ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fabrication And Characterization

Control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic devices. This paper reports the growth conditions and structural properties of ZnMgO nanowalls grown on the Si face of 4H-SiC substrates by molecular beam epitaxy without catalysts and buffer layers. Images from scanning electron microscopy revealed that the ZnMgO nanowalls are arranged in parallel rows following the stripe morphology of the SiC surface, and their thickness is around 15 nm. The crystal quality of the structures was evaluated by X-ray diffraction measurements.

scholarly journals PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 439 ◽  
Author(s):  
Juan Hao ◽  
Sijia Xu ◽  
Bingrong Gao ◽  
Lingyun Pan
Keyword(s):  
Laser Ablation ◽  
Photoelectron Spectroscopy ◽  
Pulse Laser Ablation ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Alternative Methods ◽  
X Ray ◽  
Pl Spectra ◽  
Bulk Gan

The tunable photoluminescence (PL) property is very important for gallium nitride (GaN) nanoparticles in the application of ultraviolet and blue optoelectronic devices, while conventional methods are not so satisfactory that alternative methods for preparing GaN nanoparticles should be studied. In this paper, ultra-small and well dispersed GaN nanoparticles are fabricated through femtosecond pulse laser ablation in air, water and ethanol. For the PL spectra of GaN nanoparticles, there are no shifts in air, red shifts in water and blue shifts in ethanol compared with the intrinsic PL spectra of bulk GaN. The X-ray photoelectron spectroscopy (XPS) results demonstrate that the various PL spectra can be due to the different components inside the GaN nanoparticles, which not only have effect on the PL emissions, but also greatly influence the intensity of PL. This study validates that the ablation environment has a great adjustable effect on the properties of GaN nanoparticles.

Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films

2011 ◽  
Vol 287-290 ◽  
pp. 1456-1459 ◽  
Author(s):  
P. C Chang ◽  
C. L Yu ◽  
Y. W Jahn ◽  
S. J Chang ◽  
K. H Lee
Keyword(s):  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Effect Of Temperature ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Different Temperatures ◽  
Peak Emission

InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740°C to 830°C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

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