ACCUMULATION OF CHEMICAL ELEMENTS BY ORGANS OF SPARGANIUM ERECTUM L. AND THEIR POTENTIAL USE IN PHYTOREMEDIATION PROCESS

AbstractScientific models play a vital role in science learning, representing major characteristics of scientific phenomena. A useful visualization of models that matches target concepts to source objects can facilitate students’ learning of abstract and complex structures of chemical elements and compounds. This report will show the importance of visualization and innovative technology (such as augmented reality), which has the potential of supporting students’ learning of stereochemistry and interactions among molecules. Examples (including organic compounds, chemical elements of 1A and 7A in the periodic table, water polarity, and carbon nanotube) are drawn to illustrate the potential use of augmented reality in chemistry instruction.

Download Full-text

Nuclear Processes Related to the Ap Stars and the Heaviest Chemical Elements

International Astronomical Union Colloquium ◽

10.1017/s0252921100080520 ◽

1976 ◽

Vol 32 ◽

pp. 169-182

Author(s):

B. Kuchowicz

Keyword(s):

Nuclear Physics ◽

Nuclear Reactions ◽

Chemical Elements ◽

Fission Products ◽

Abundance Pattern ◽

Isotopic Shifts ◽

Processed Material ◽

R Process ◽

Ap Stars ◽

Nuclear Processes

SummaryIsotopic shifts in the lines of the heavy elements in Ap stars, and the characteristic abundance pattern of these elements point to the fact that we are observing mainly the products of rapid neutron capture. The peculiar A stars may be treated as the show windows for the products of a recent r-process in their neighbourhood. This process can be located either in Supernovae exploding in a binary system in which the present Ap stars were secondaries, or in Supernovae exploding in young clusters. Secondary processes, e.g. spontaneous fission or nuclear reactions with highly abundant fission products, may occur further with the r-processed material in the surface of the Ap stars. The role of these stars to the theory of nucleosynthesis and to nuclear physics is emphasized.

Download Full-text

The growth of mica polytypes as studied by conventional and high-resolution TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074690 ◽

1983 ◽

Vol 41 ◽

pp. 174-177

Author(s):

A. Baronnet ◽

M. Amouric

Keyword(s):

Water Pressure ◽

Point Of View ◽

Temperature Fields ◽

Natural Occurrence ◽

Growth Mechanisms ◽

Long Period ◽

High Resolution Tem ◽

Layer Stacking ◽

Experimental Works ◽

Potential Use

The origin of mica polytypes has long been a challenging problem for crystal- lographers, mineralogists and petrologists. From the petrological point of view, interest in this field arose from the potential use of layer stacking data to furnish further informations about equilibrium and/or kinetic conditions prevailing during the crystallization of the widespread mica-bearing rocks. From the compilation of previous experimental works dealing with the occurrence domains of the various mica "polymorphs" (1Mr, 1M, 2M1, 2M2 and 3T) within water-pressure vs temperature fields, it became clear that most of these modifications should be considered as metastable for a fixed mica species. Furthermore, the natural occurrence of long-period (or complex) polytypes could not be accounted for by phase considerations. This highlighted the need of a more detailed kinetic approach of the problem and, in particular, of the role growth mechanisms of basal faces could play in this crystallographic phenomenon.

Download Full-text

An atomic-resolution microscope study of Al contracts on GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145005 ◽

1986 ◽

Vol 44 ◽

pp. 726-727

Author(s):

Z. Liliental-Weber ◽

C. Nelson ◽

R. Ludeke ◽

R. Gronsky ◽

J. Washburn

Keyword(s):

High Speed ◽

Schottky Contacts ◽

Detailed Knowledge ◽

The Past ◽

Semiconductor Interfaces ◽

Deposited Metal ◽

Microwave Applications ◽

Free Interfaces ◽

Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Download Full-text

Quantitative parallel EELS spectrum imaging developed as a new tool in AEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010013064x ◽

1992 ◽

Vol 50 (2) ◽

pp. 1202-1203

Author(s):

Gianluigi Botton ◽

Gilles L'espérance

Keyword(s):

Statistical Analysis ◽

Spatial Resolution ◽

Personal Computer ◽

Systematic Study ◽

Present Author ◽

Chemical Elements ◽

Detection Limits ◽

Research Groups ◽

Quantitative Performance ◽

Spectrum Imaging

As interest for parallel EELS spectrum imaging grows in laboratories equipped with commercial spectrometers, different approaches were used in recent years by a few research groups in the development of the technique of spectrum imaging as reported in the literature. Either by controlling, with a personal computer both the microsope and the spectrometer or using more powerful workstations interfaced to conventional multichannel analysers with commercially available programs to control the microscope and the spectrometer, spectrum images can now be obtained. Work on the limits of the technique, in terms of the quantitative performance was reported, however, by the present author where a systematic study of artifacts detection limits, statistical errors as a function of desired spatial resolution and range of chemical elements to be studied in a map was carried out The aim of the present paper is to show an application of quantitative parallel EELS spectrum imaging where statistical analysis is performed at each pixel and interpretation is carried out using criteria established from the statistical analysis and variations in composition are analyzed with the help of information retreived from t/γ maps so that artifacts are avoided.

Download Full-text

How SIMS microscopy can be used in medicine

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100132649 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1602-1603

Author(s):

Philippe Fragu

Keyword(s):

Mass Spectrometry ◽

Biomedical Applications ◽

Secondary Ion Mass Spectrometry ◽

Chemical Elements ◽

Biological Applications ◽

The Past ◽

Potential Source ◽

Secondary Ion ◽

Chemical Integrity ◽

Scientific Endeavour

The identification, localization and quantification of intracellular chemical elements is an area of scientific endeavour which has not ceased to develop over the past 30 years. Secondary Ion Mass Spectrometry (SIMS) microscopy is widely used for elemental localization problems in geochemistry, metallurgy and electronics. Although the first commercial instruments were available in 1968, biological applications have been gradual as investigators have systematically examined the potential source of artefacts inherent in the method and sought to develop strategies for the analysis of soft biological material with a lateral resolution equivalent to that of the light microscope. In 1992, the prospects offered by this technique are even more encouraging as prototypes of new ion probes appear capable of achieving the ultimate goal, namely the quantitative analysis of micron and submicron regions. The purpose of this review is to underline the requirements for biomedical applications of SIMS microscopy.Sample preparation methodology should preserve both the structural and the chemical integrity of the tissue.

Download Full-text

X-ray mapping without STEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010017027x ◽

1994 ◽

Vol 52 ◽

pp. 508-509

Author(s):

Judith M. Brock ◽

Max T. Otten

Keyword(s):

Life Science ◽

Materials Science ◽

Chemical Elements ◽

Full Description ◽

Scanning System ◽

Elemental Distribution ◽

X Ray ◽

Transmission Electron ◽

Distribution Of Elements ◽

Made In

A knowledge of the distribution of chemical elements in a specimen is often highly useful. In materials science specimens features such as grain boundaries and precipitates generally force a certain order on mental distribution, so that a single profile away from the boundary or precipitate gives a full description of all relevant data. No such simplicity can be assumed in life science specimens, where elements can occur various combinations and in different concentrations in tissue. In the latter case a two-dimensional elemental-distribution image is required to describe the material adequately. X-ray mapping provides such of the distribution of elements.The big disadvantage of x-ray mapping hitherto has been one requirement: the transmission electron microscope must have the scanning function. In cases where the STEM functionality – to record scanning images using a variety of STEM detectors – is not used, but only x-ray mapping is intended, a significant investment must still be made in the scanning system: electronics that drive the beam, detectors for generating the scanning images, and monitors for displaying and recording the images.

Download Full-text